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Haiyang Pan

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.quant-gas Hardware Architecture quant-ph

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preprint2020arXiv

Unsaturated Single Atoms on Monolayer Transition Metal Dichalcogenides for Ultrafast Hydrogen Evolution

Large scale implementation of electrochemical water splitting for hydrogen evolution requires cheap and efficient catalysts to replace expensive platinum. Molybdenum disulfide is one of the most promising alternative catalysts but its intrinsic activity is still inferior to platinum. There is therefore a need to explore new active site origins in molybdenum disulfide with ultrafast reaction kinetics and to understand their mechanisms. Here, we report a universal cold hydrogen plasma reduction method for synthesizing different single atoms sitting on two-dimensional monolayers. In case of molybdenum disulfide, we design and identify a new type of active site, i.e., unsaturated Mo single atoms on cogenetic monolayer molybdenum disulfide. The catalyst shows exceptional intrinsic activity with a Tafel slope of 35.1 mV dec-1 and a turnover frequency of ~10^3 s-1 at 100 mV, based on single flake microcell measurements. Theoretical studies indicate that coordinately unsaturated Mo single atoms sitting on molybdenum disulfide increase the bond strength between adsorbed hydrogen atoms and the substrates through hybridization, leading to fast hydrogen adsorption/desorption kinetics and superior hydrogen evolution activity. This work shines fresh light on preparing highly-efficient electrocatalysts for water splitting and other electrochemical processes, as well as provides a general method to synthesize single atoms on two-dimensional monolayers.

preprint2016arXiv

Quantum oscillation and nontrivial transport in the Dirac Semimetal Cd3As2 nanodevice

Here we demonstrate the Shubnikov de Haas oscillation in high-quality Cd3As2 nanowires grown by a chemical vapor deposition approach. The dominant transport of topological Dirac fermions is evident by the nontrivial Berry phase in the Landau Fan diagram. The quantum oscillations rise at a small field of 2 Tesla and preserves till up to 100K, revealing a sizeable Landau level gap and a mobility of over 2000 cm2/V-1s-1. The angle-variable oscillations indicates the isotropy of the bulk Dirac transport. The large estimated mean free path appeals the one-dimensional transport of Dirac semimetals.

preprint2016arXiv

Weak antilocalization in Cd3As2 thin films

Recently, it has been theoretically predicted that Cd3As2 is a three dimensional Dirac material, a new topological phase discovered after topological insulators, which exhibits a linear energy dispersion in the bulk with massless Dirac fermions. Here, we report on the low-temperature magnetoresistance measurements on a ~50nm-thick Cd3As2 film. The weak antilocalization under perpendicular magnetic field is discussed based on the two-dimensional Hikami-Larkin-Nagaoka (HLN) theory. The electron-electron interaction is addressed as the source of the dephasing based on the temperature-dependent scaling behavior. The weak antilocalization can be also observed while the magnetic field is parallel to the electric field due to the strong interaction between the different conductance channels in this quasi-two-dimensional film.

preprint2015arXiv

Twin-Load: Building a Scalable Memory System over the Non-Scalable Interface

Commodity memory interfaces have difficulty in scaling memory capacity to meet the needs of modern multicore and big data systems. DRAM device density and maximum device count are constrained by technology, package, and signal in- tegrity issues that limit total memory capacity. Synchronous DRAM protocols require data to be returned within a fixed latency, and thus memory extension methods over commodity DDRx interfaces fail to support scalable topologies. Current extension approaches either use slow PCIe interfaces, or require expensive changes to the memory interface, which limits commercial adoptability. Here we propose twin-load, a lightweight asynchronous memory access mechanism over the synchronous DDRx interface. Twin-load uses two special loads to accomplish one access request to extended memory, the first serves as a prefetch command to the DRAM system, and the second asynchronously gets the required data. Twin-load requires no hardware changes on the processor side and only slight soft- ware modifications. We emulate this system on a prototype to demonstrate the feasibility of our approach. Twin-load has comparable performance to NUMA extended memory and outperforms a page-swapping PCIe-based system by several orders of magnitude. Twin-load thus enables instant capacity increases on commodity platforms, but more importantly, our architecture opens opportunities for the design of novel, efficient, scalable, cost-effective memory subsystems.

preprint2012arXiv

Two-dimensional universal conductance fluctuations and the electron-phonon interaction of topological surface states in Bi2Te2Se nanoribbons

The universal conductance fluctuations (UCFs), one of the most important manifestations of mesoscopic electronic interference, have not yet been demonstrated for the two-dimensional surface state of topological insulators (TIs). Even if one delicately suppresses the bulk conductance by improving the quality of TI crystals, the fluctuation of the bulk conductance still keeps competitive and difficult to be separated from the desired UCFs of surface carriers. Here we report on the experimental evidence of the UCFs of the two-dimensional surface state in the bulk insulating Bi2Te2Se nanoribbons. The solely-B\perp-dependent UCF is achieved and its temperature dependence is investigated. The surface transport is further revealed by weak antilocalizations. Such survived UCFs of the topological surface states result from the limited dephasing length of the bulk carriers in ternary crystals. The electron-phonon interaction is addressed as a secondary source of the surface state dephasing based on the temperature-dependent scaling behavior.