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Haitao Dai

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cond-mat.mes-hall physics.optics cond-mat.mtrl-sci cond-mat.supr-con physics.ins-det

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preprint2026arXiv

Electrically tunable nonrigid moire exciton polariton supersolids at room temperature

A supersolid is a macroscopic quantum state which sustains superfluid and crystallizing structure together after breaking the U(1) symmetry and translational symmetry. On the other hand, a moire pattern can form by superimposing two periodic structures along a particular direction. Up to now, supersolids and moire states are disconnected from each other. In this work we show that exciton polariton supersolids can form moire states in a double degenerate parametric scattering process which creates two constituted supersolids with different periods in a liquid crystal microcavity. In addition, we demonstrate the nonrigidity of the moire exciton polariton supersolids by electrically tuning the wavevector and period of one supersolid component with another one being fixed. Our work finds a simple way to link moire states and supersolids, which offers to study nontrivial physics emerging from the combination of moire lattices and supersolids which can be electrically tuned at room temperature.

preprint2026arXiv

Observation of anomalous exciton polariton bands in PEPI perovskite based microcavity at room temperature

Recently anomalous energy bands with negative mass attract intensive attention where non Hermiticity plays an important role. In this work we observe anomalous exciton polariton bands in PEPI perovskite based microcavity at room temperature. We simulate the anomalous band structure using a non-Hermitian coupled oscillator model which agree with experiments very well. Our results offer to study non-Hermitian polariton wave dynamics at room temperature.

preprint2021arXiv

Isochronous Data Link Across a Superconducting Nb Flex Cable with 5 femtojoules per Bit

Interconnect properties position superconducting digital circuits to build large, high performance, power efficient digital systems. We report a board-to-board communication data link, which is a critical technological component that has not yet been addressed. Synchronous communication on chip and between chips mounted on a common board is enabled by the superconducting resonant clock/power network for RQL circuits. The data link is extended to board-to-board communication using isochronous communication, where there is a common frequency between boards but the relative phase is unknown. Our link uses over-sampling and configurable delay at the receiver to synchronize to the local clock phase. A single-bit isochronous data link has been demonstrated on-chip through a transmission line, and on a multi-chip module (MCM) through a superconducting tape between driver and receiver with variable phase offset. Measured results demonstrated correct functionality with a clock margin of 3 dB at 3.6 GHz, and with 5 fJ/bit at 4.2 K.

preprint2015arXiv

A comparing study on optoelectronic properties of phototransistors based on MEH-PPV and PbS QD hybrids with bulk- and layer-heterojunction

As the responsivity (R) of a thin film photo detector is proportional to the product of the photo-induced carrier density (n) and mobility (u) (Z. Sun, Z. Liu, J. Li, G.-a. Tai, S. Lau and F. Yan, Adv. Mater., 24, 5878, 2012), which of the types is conducive to photo detection, choosing between layer-heterojunction (LH) and bulk-heterojunction (BH) field effect phototransistors (FEpTs), is still unknown. A comparison study is performed based on an MEH-PPV and PbS QDs hybrid.

preprint2014arXiv

High-performance controllable ambipolar infrared phototransistors based on graphene-quantum dot hybrid

The field effect transistors (FETs) exhibited ultrahigh responsivity (107 A/W) to infrared light with great improvement of mobility in graphene / PbS quantum dot (QD) hybrid. These reported transistors are either unipolar or depletion mode devices. In this paper, we presented and fabricated conveniently-controlled grapheme / PbS QD hybrid FETs. Through the investigation on electric and optoelectronic properties, the ambipolar FETs (normally OFF) can be switched ON by raising gate voltage (VG) up to 3.7 V and -0.8 V in the first and third quadrants. Near these thresholds (VT) each carrier species shows comparable mobility (~ 300 cm2V-1s-1). Photo-responsivity reach ~ 107 A/W near each threshold and it will linearly increases with (VG-VT). These hybrid FETs become strongly competitive candidates for devices in flexible integrated circuits with low cost, large area, low-energy consumption and high performances.