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Researcher profile

Yun-Peng Wang

Yun-Peng Wang contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.dis-nn

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Published work

4 published item(s)

preprint2022arXiv

First-Principles investigation of the First-order Phase Transition in Kagome Na$_2$Ti$_3$Cl$_8$

The antiferromagnetic kagome material Na2Ti3Cl8 exhibits a first-order phase transition; the low-temperature phase is characterized by the trimerizations of Ti ions. In this work, we carry out first-principles calculations on the crystal and electronic structure of Na$_2$Ti$_3$Cl$_8$ at the high- and low-temperature phases. The crystal structures, including the lattice constant and the trimerization of Ti ions, are well reproduced by taking account a small Hubbard correction of 1 eV. The calculated total energy landscape reveals a first-order phase transition with the total energy barrier of 80 meV per formula unit. Analysis of the electronic structure indicates a direct metal bonding among Ti in the trimierized low-temperature phase.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

The structure of amorphous two-dimensional materials: Elemental monolayer amorphous carbon versus binary monolayer amorphous boron nitride

The structure of amorphous materials has been debated since the 1930's as a binary question: amorphous materials are either Zachariasen continuous random networks (Z-CRNs) or Z-CRNs containing crystallites. It was recently demonstrated, however, that amorphous diamond can be synthesized in either form. Here we address the question of the structure of single-atom-thick amorphous monolayers. We reanalyze the results of prior simulations for amorphous graphene and report kinetic Monte Carlo simulations based on alternative algorithms. We find that crystallite-containing Z-CRN is the favored structure of elemental amorphous graphene, as recently fabricated, whereas the most likely structure of binary monolayer amorphous BN is altogether different than either of the two long-debated options: it is a compositionally disordered "pseudo-CRN" comprising a mix of B-N and noncanonical B-B and N-N bonds and containing "pseudocrystallites", namely honeycomb regions made of noncanonical hexagons. Implications for other non-elemental 2D and bulk amorphous materials are discussed.

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preprint2021arXiv

Thermal transport of amorphous carbon and boron-nitride monolayers

Two-dimensional (2D) materials like graphene and h-BN usually show high thermal conductivity, which enables rich applications in thermal dissipation and nanodevices. Disorder, on the other hand, is often present in 2D materials. Structural disorder induces localization of electrons and phonons and alters the electronic, mechanical, thermal, and magnetic properties. Here we calculate the in-plane thermal conductivity of both monolayer carbon and monolayer boron nitride in the amorphous form, by reverse nonequilibrium molecular dynamics simulations. We find that the thermal conductivity of both monolayer amorphous carbon (MAC) and monolayer amorphous boron nitride (ma-BN) are about two orders of magnitude smaller than their crystalline counterparts. Moreover, the ultralow thermal conductivity is independent of the temperature due to the extremely short phonon mean free path in these amorphous materials. The relation between the structure disorder and the reduction of the thermal conductivity is analyzed in terms of the vibrational density of states and the participation ratio. ma-BN shows strong vibrational localization across the frequency range, while MAC exhibits a unique extended G' mode at high frequency due to its sp2 hybridization and the broken E2g symmetry. The present results pave the way for potential applications of MAC and ma-BN in thermal management.

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preprint2020arXiv

Gate field effects on the topological insulator BiSbTeSe2 interface

Interfaces between two topological insulators are of fundamental interest in condensed matter physics. Inspired by experimental efforts, we study interfacial processes between two slabs of BiSbTeSe2 (BSTS) via first principles calculations. Topological surface states are absent for the BSTS interface at its equilibrium separation, but our calculations show that they appear if the inter-slab distance is greater than 6 Ang. More importantly, we find that topological interface states can be preserved by inserting two or more layers of hexagonal boron nitride between the two BSTS slabs. In experiments, the electric current tunneling through the interface is insensitive to back gate voltage when the bias voltage is small. Using a first-principles based method that allows us to simulate gate field, we show that at low bias the extra charge induced by a gate voltage resides on the surface that is closest to the gate electrode, leaving the interface almost undoped. This provides clues to understand the origin of the observed insensitivity of transport properties to back voltage at low bias. Our study resolves a few questions raised in experiment, which does not yet offer a clear correlation between microscopic physics and transport data. We provide a road map for the design of vertical tunneling junctions involving the interface between two topological insulators.

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