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Hai Lu

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Published work

3 published item(s)

preprint2022arXiv

Symmetry-protected higher-order exceptional points in staggered flatband rhombic lattices

Higher-order exceptional points (EPs), which appear as multifold degeneracies in the spectra of non-Hermitian systems, are garnering extensive attention in various multidisciplinary fields. However, constructing higher-order EPs still remains as a challenge due to the strict requirement of the system symmetries. Here we demonstrate that higher-order EPs can be judiciously fabricated in PT -symmetric staggered rhombic lattices by introducing not only on-site gain/loss but also nonHermitian couplings. Zero-energy flatbands persist and symmetry-protected third-order EPs (EP3) arise in these systems owing to the non-Hermitian chiral/sublattice symmetry, but distinct phase transitions and propagation dynamics occur. Specifically, the EP3 arises at the Brillouin zone (BZ) boundary in the presence of on-site gain/loss. The single-site excitations display an exponential power increase in the PT -broken phase. Meanwhile, a nearly flatband sustains when a small lattice perturbation is applied. For the lattices with non-Hermitian couplings, however, the EP3 appears at the BZ center. Quite remarkably, our analysis unveils a dynamical delocalization-localization transition for the excitation of the dispersive bands and a quartic power increase beyond the EP3. Our scheme provides a new platform towards the investigation of the higher-order EPs, and can be further extended to the study of topological phase transitions or nonlinear processes associated with higher-order EPs.

preprint2022arXiv

Time Resolution of the 4H-SiC PIN Detector

We address the determination of the time resolution for the $\rm 100~μm$ 4H-SiC PIN detectors fabricated by Nanjing University (NJU). The time response to $\rm β$ particles from a $\rm ^{90}$Sr source is investigated for the detection of the minimum ionizing particles (MIPs). We study the influence of different reverse voltages, which correspond to different carrier velocities and device sizes, and how this correlates with the detector capacitance. We determine a time resolution $\rm (94\pm1)~ps$ for $\rm 100~μm$ 4H-SiC PIN detector. A fast simulation software, termed RASER (RAdiation SEmiconductoR), is developed, and validated by comparing the waveform obtained from simulated and measured data. The simulated time resolution is $\rm (73\pm 1)~ps$ after considering the intrinsic leading contributions of the detector to time resolution.

preprint2005arXiv

Effect of Native Defects on Optical Properties of InxGa1-xN Alloys

The energy position of the optical absorption edge and the free carrier populations in InxGa1-xN ternary alloys can be controlled using high energy 4He+ irradiation. The blue shift of the absorption edge after irradiation in In-rich material (x > 0.34) is attributed to the band-filling effect (Burstein-Moss shift) due to the native donors introduced by the irradiation. In Ga-rich material, optical absorption measurements show that the irradiation-introduced native defects are inside the bandgap, where they are incorporated as acceptors. The observed irradiation-produced changes in the optical absorption edge and the carrier populations in InxGa1-xN are in excellent agreement with the predictions of the amphoteric defect model.