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Source author record

Habib Rostami

Habib Rostami appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elphysics.app-phphysics.optics

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Published work

16 published item(s)

preprint2022arXiv

Probing Electronic States in Monolayer Semiconductors through Static and Transient Third-Harmonic Spectroscopy

Electronic states and their dynamics are of critical importance for electronic and optoelectronic applications. Here, we probe various relevant electronic states in monolayer MoS2, such as multiple excitonic Rydberg states and free-particle energy bands, with a high relative contrast of up to >200 via broadband (from ~1.79 to 3.10 eV) static third-harmonic spectroscopy, which is further supported by theoretical calculations. Moreover, we introduce transient third-harmonic spectroscopy to demonstrate that third-harmonic generation can be all-optically modulated with a modulation depth exceeding ~94% at ~2.18 eV, providing direct evidence of dominant carrier relaxation processes, associated with carrier-exciton and carrier-phonon interactions. Our results indicate that static and transient third-harmonic spectroscopies are not only promising techniques for the characterization of monolayer semiconductors and their heterostructures, but also a potential platform for disruptive photonic and optoelectronic applications, including all-optical modulation and imaging.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Pseudogauge field driven acoustoelectric current in two-dimensional hexagonal Dirac materials

Using a diagrammatic scheme, we study the acoustoelectric effects in two-dimensional (2D) hexagonal Dirac materials due to the sound-induced pseudo-gauge field. We analyze both uniform and {\em spatially dispersive} currents in response to copropagating and counterpropagating sound waves, respectively. In addition to the longitudinal acoustoelectric current, we obtain an exotic {\em transverse} charge current flowing perpendicular to the sound propagation direction owing to the interplay of transverse and longitudinal gauge field components $j_T\propto A_L A^\ast_T$. In contrast to the almost isotropic directional profile of the longitudinal uniform current, a highly anisotropic transverse component $j_T\sim\sin(6θ)$ is achieved that stems from the inherited three-fold symmetry of the hexagonal lattice. However, both longitudinal and transverse parts of the dispersive current are predicted to be strongly anisotropic $\sim\sin^2(3θ)$ or $\cos^2(3θ)$. We quantitatively estimate the pseudogauge field contribution to the acoustoelectric current that can be probed in future experiments in graphene and other 2D hexagonal Dirac materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Second Harmonic Helicity and Faraday Rotation in Gated Single-Layer 1T$'$-WTe$_2$

Single-layer of 1T$'$ phase of WTe$_2$ provides a rich platform for exotic physical properties such as nonlinear Hall effect and high-temperature quantum spin hall transport. Utilizing a continuum model and diagrammatic method, we calculate the second harmonic conductivity of monolayer 1T$'$-WTe$_2$ modulated by an external vertical electric field and electron doping. We obtain a finite helicity and Faraday rotation for the second harmonic signal in response to linearly polarized incident light in the presence of time-reversal symmetry. The second harmonic signal's helicity is highly controllable by altering the bias potential and serves as an optical indicator of the nonlinear Hall current. Our study motivates future experimental investigation for the helicity spectroscopy of two dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Strain-driven chiral phonons in two-dimensional hexagonal materials

Hexagonal two-dimensional materials with broken inversion symmetry (as BN or transition metal dichalcodenides) are known to sustain chiral phonons with finite angular momentum, adding a further useful degree of freedom to the extraordinary entangled (electrical, optical, magnetic and mechanical) properties of these compounds. However, because of lattice symmetry constraints, such chiral modes are constrained to the corners of the Brillouin zone, allowing little freedom for manipulating the chiral features. In this work, we show how the application of uniaxial strain leads to the existence of new chiral modes in the vicinity of the zone center. We also show that such strain-induced chiral modes, unlike the ones pinned at the K points, can be efficiently manipulated by modifying the strain itself, which determines the position of these modes in the Brillouin Zone. The results of the present paper add a new technique for the engineering of the quantum properties of two-dimensional lattices.

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preprint2020arXiv

Probing quantum criticality using nonlinear Hall effect in a metallic Dirac system

Interaction driven symmetry breaking in a metallic (doped) Dirac system can manifest in the spontaneous gap generation at the nodal point buried below the Fermi level. Across this transition linear conductivity remains finite making its direct observation difficult in linear transport. We propose the nonlinear Hall effect as a direct probe of this transition when inversion symmetry is broken. Specifically, for a two-dimensional Dirac material with a tilted low-energy dispersion, we first predict a transformation of the characteristic inter-band resonance peak into a non-Lorentzian form in the collisionless regime. Furthermore, we show that inversion-symmetry breaking quantum phase transition is controlled by an exotic tilt-dependent line of critical points. As this line is approached from the ordered side, the nonlinear Hall conductivity is suppressed owing to the scattering between the strongly coupled incoherent fermionic and bosonic excitations. Our results should motivate further studies of nonlinear responses in strongly interacting Dirac materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Edge modes in zigzag and armchair ribbons of monolayer MoS$_2$

We explore the electronic structure, orbital character and topological aspect of a monolayer MoS$_2$ nanoribbon using tight-binding (TB) and low-energy (${\bm k}\cdot{\bm p} $) models. We obtain a mid-gap edge mode in the zigzag ribbon of monolayer MoS$_2$, which can be traced back to the topological properties of the bulk band structure. Monolayer MoS$_2$ can be considered as a valley Hall insulator. The boundary conditions at armchair edges mix the valleys on the edges, and a gap is induced in the edge modes. The spin-orbit coupling in the valence band reduces the hybridization of the bulk states.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spin relaxation and the Kondo effect in transition metal dichalcogenide monolayers

We investigate the spin relaxation and Kondo resistivity caused by magnetic impurities in doped transition metal dichalcogenides monolayers. We show that momentum and spin relaxation times due to the exchange interaction by magnetic impurities, are much longer when the Fermi level is inside the spin split region of the valence band. In contrast to the spin relaxation, we find that the dependence of Kondo temperature $T_K$ on the doping is not strongly affected by the spin-orbit induced splitting, although only one of the spin species are present at each valley. This result, which is obtained using both perturbation theory and poor man's scaling methods, originates from the intervalley spin-flip scattering in the spin-split region. We further demonstrate the decline in the conductivity with temperatures close to $T_K$ which can vary with the doping. Our findings reveal the qualitative difference with the Kondo physics in conventional metallic systems and other Dirac materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Theory of third harmonic generation in graphene: a diagrammatic approach

We present a finite-temperature diagrammatic perturbation theory of third harmonic generation (THG) in doped graphene. We carry out calculations of the third-order conductivity in the scalar potential gauge, highlighting a subtle cancellation between a Fermi surface contribution, which contains only power laws, and power-law contributions of inter-band nature. Only logarithms survive in the final result. We conclude by presenting quantitative results for the up-conversion efficiency at zero and finite temperature. Our results shed light on the on-going dispute over the dependence of THG on carrier concentration in graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Charge compressibility and quantum magnetic phase transition in MoS$_2$

We investigate the ground-state properties of monolayer MoS$_2$ incorporating the Coulomb interaction together with a short-range intervalley interaction between charged particles between two valleys within the Hartree-Fock approximation. We consider four variables as independent parameters, namely homogeneous charge (electron or hole) density, averaged dielectric constant, spin degree of freedom and finally the Hubbard repulsion coefficient which originates mostly from $4d$ orbits of Mo atoms. We find the electronic charge compressibility within the mean-field approximation and show that non-monotonic behavior of the compressibility as a function of carrier density which is rather different from those of the two-dimensional electron gas. We also explore a paramagnetic-to-ferromagnetic quantum phase transition for the wide range of the electron density in the parameter space.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Theory of strain in single-layer transition metal dichalcogenides

Strain engineering has emerged as a powerful tool to modify the optical and electronic properties of two-dimensional crystals. Here we perform a systematic study of strained semiconducting transition metal dichalcogenides. The effect of strain is considered within a full Slater-Koster tight-binding model, which provides us with the band structure in the whole Brillouin zone. From this, we derive an effective low-energy model valid around the K point of the BZ, which includes terms up to second order in momentum and strain. For a generic profile of strain, we show that the solutions for this model can be expressed in terms of the harmonic oscillator and double quantum well models, for the valence and conduction bands respectively. We further study the shift of the position of the electron and hole band edges due to uniform strain. Finally, we discuss the importance of spin-strain coupling in these 2D semiconducting materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Valley Zeeman effect and spin-valley polarized conductance in monolayer MoS$_2$ in a perpendicular magnetic field

We study the effect of a perpendicular magnetic field on the electronic structure and charge transport of a monolayer MoS$_2$ nanoribbon at zero temperature. We particularly explore the induced valley Zeeman effect through the coupling between the magnetic field, $B$, and the orbital magnetic moment. We show that the effective two-band Hamiltonian provides a mismatch between the valley Zeeman coupling in the conduction and valence bands due to the effective mass asymmetry and it is proportional to $B^2$ similar to the diamagnetic shift of exciton binding energies. However, the dominant term which evolves with $B$ linearly, originates from the multi-orbital and multi-band structures of the system. Besides, we investigate the transport properties of the system by calculating the spin-valley resolved conductance and show that, in a low-hole doped case, the transport channels at the edge are chiral for one of the spin components. This leads to a localization of the non-chiral spin component in the presence of disorder and thus provides a spin-valley polarized transport induced by disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Andreev reflection in monolayer MoS2

Andreev reflection in a monolayer molybdenum disulfide superconducting-normal (S/N) hybrid junction is investigated. We find, by using a modified-Dirac Hamiltonian and the scattering formalism, that the perfect Andreev reflection happens at normal incidence with $p$-doped S and N regions. The probability of the Andreev reflection and the resulting Andreev conductance, in this system, are demonstrated to be large in comparison with corresponding gapped graphene structure. We further investigate the effect of a topological term ($β)$ in the Hamiltonian and show that it results in an enhancement of the Andreev conductance with $p$-doped S and N regions, while in the corresponding structure with $n$-doped S region it is strongly reducible in comparison. This effect can be explained in terms of the dependence of the Andreev reflection probability on the sign of $β$ and the chemical potential in the superconducting region.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Intrinsic optical conductivity of modified-Dirac fermion systems

We analytically calculate the intrinsic longitudinal and transverse optical conductivities of electronic systems which govern by a modified-Dirac fermion model Hamiltonian for materials beyond graphene such as monolayer MoS$_2$ and ultrathin film of the topological insulator. We analyze the effect of a topological term in the Hamiltonian on the optical conductivity and transmittance. We show that the optical response enhances in the non-trivial phase of the ultrathin film of the topological insulator and the optical Hall conductivity changes sign at transition from trivial to non-trivial phases which has significant consequences on a circular polarization and optical absorption of the system.

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preprint2013arXiv

Effective lattice Hamiltonian for monolayer MoS2 : Tailoring electronic structure with perpendicular electric and magnetic fields

We propose an effective lattice Hamiltonian for monolayer MoS$_2$ in order to describe the low-energy band structure and investigate the effect of perpendicular electric and magnetic fields on its electronic structure. We derive a tight-binding model based on the hybridization of the $d$ orbitals of molybdenum and $p$ orbitals of sulfur atoms and then introduce a modified two-band continuum model of monolayer MoS$_2$ by exploiting the quasi-degenerate partitioning method. Our theory proves that the low-energy excitations of the system are no longer massive Dirac fermions. It reveals a difference between electron and hole masses and provides trigonal warping effects. Furthermore, we predict a valley degeneracy breaking effect in the Landau levels. Besides, we also show that applying a gate voltage perpendicular to the monolayer modifies the electronic structure including the band gap and effective masses.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic structure and layer-resolved transmission of bilayer graphene nanoribbon in the presence of vertical fields

Electronic properties of bilayer graphene are distinct from both the conventional two dimensional electron gas and monolayer graphene due to its particular chiral properties and excitation charge carrier dispersions. We study the effect of strain on the electronic structure, the edge-states and charge transport of bilayer graphene nanoribbon at zero-temperature. We demonstrate a valley polarized quantum Hall effect in biased bilayer graphene when the system is subjected to a perpendicular magnetic field. In this system a topological phase transition from a quantum valley Hall to a valley polarized quantum Hall phase can occur by tuning the interplanar strain. Furthermore, we study the layer-resolved transport properties by calculating the layer polarized quantity by using the recursive Green's function technique and show that the resulting layer polarized value confirms the obtained phases. These predictions can be verified by experiments and our results demonstrate the possibility for exploiting strained bilayer graphene in the presence of external fields for electronics and valleytronics devices.

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preprint2013arXiv

Valley polarized transport in strained graphene based Corbino disc

We study analytically and numerically the magnetotransport of strained graphene in a Corbino geometry gating in the presence of an external perpendicular magnetic field. The conductance of the Corbino disc of deformed graphene with a uniaxial and an inhomogeneous strain is calculated by using the Landauer-Büttiker method. We show that the oscillation period of the conductance as a function of the magnetic flux depends on uniaxial strain and the conductance sharply drops along the direction of graphene stretching. The conductance amplitude, on the other hand, can be manipulated by induced pseudomagnetic flux. A valley polarized regime, caused by the inhomogeneous strain, is obtained and in addition we find a wide energy interval in which the system is fully valley polarized.

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