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Researcher profile

H. Y. Hwang

H. Y. Hwang contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.supr-concond-mat.mes-hallcond-mat.other

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Published work

24 published item(s)

preprint2014arXiv

The potential profile at the LaAlO3/SrTiO3 (001) heterointerface in operando conditions

We report measurements of the gate-bias dependent band alignment, especially the confining potential profile, at the conducting LaAlO3/SrTiO3 (001) heterointerface using soft and hard x-ray photoemission spectroscopy. Depth-profiling analysis reveals that a significant potential drop on the SrTiO3 side of the interface occurs within ~2 nm of the interface under negative gate bias voltage. These results demonstrate gate control of the collapse of permittivity at the interface, and explain the dramatic loss of electron mobility with back-gate depletion.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Visible light enhanced field effect at LaAlO3/SrTiO3 interface

Electrical field and light-illumination have been two most widely used stimuli in tuning the conductivity of semiconductor devices. Via capacitive effect electrical field modifies the carrier density of the devices, while light-illumination generates extra carriers by exciting trapped electrons into conduction band1. Here, we report on an unexpected light illumination enhanced field effect in a quasi-two-dimensional electron gas (q2DEG) confined at the LaAlO3/SrTiO3 (LAO/STO) interface which has been the focus of emergent phenomenon exploration2-14. We found that light illumination greatly accelerates and amplifies the field effect, driving the field-induced resistance growth which originally lasts for thousands of seconds into an abrupt resistance jump more than two orders of magnitude. Also, the field-induced change in carrier density is much larger than that expected from the capacitive effect, and can even be opposite to the conventional photoelectric effect. This work expands the space for novel effect exploration and multifunctional device design at complex oxide interfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

X-ray spectroscopic study of BaFeO$_{3}$ thin films; an Fe$ ^{4+}$ ferromagnetic insulator

We investigated the electronic and magnetic properties of fully oxidized BaFeO3 thin films, which show ferromagnetic-insulating properties with cubic crystal structure, by hard x-ray photoemission spectroscopy (HAXPES), x-ray absorption spectroscopy (XAS) and soft x-ray magnetic circular dichroism (XMCD). We analyzed the results with configuration-interaction (CI) cluster-model calculations for Fe4+, which showed good agreement with the experimental results. We also studied SrFeO3 thin films, which have an Fe4+ ion helical magnetism in cubic crystal structure, but are metallic at all temperatures. We found that BaFeO3 thin films are insulating with large magnetization (2.1muB/formula unit) under ~ 1 T, using valence-band HAXPES and Fe 2p XMCD, which is consistent with the previously reported resistivity and magnetization measurements. Although Fe 2p core-level HAXPES and Fe 2p XAS spectra of BaFeO3 and SrFeO3 thin films are quite similar, we compared the insulating BaFeO3 to metallic SrFeO3 thin films with valence-band HAXPES. The CI cluster-model analysis indicates that the ground state of BaFeO3 is dominated by d5L (L: ligand hole) configuration due to the negative charge transfer energy, and that the band gap has significant O 2p character. We revealed that the differences of the electronic and magnetic properties between BaFeO3 and SrFeO3 arise from the differences in their lattice constants, through affecting the strength of hybridization and bandwidth.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Stoichiometry control of the electronic properties of the LaAlO_3/SrTiO_3 heterointerface

We investigate the effect of the laser parameters of pulsed laser deposition on the film stoichiometry and electronic properties of LaAlO_3/SrTiO_3 (001) heterostructures. The La/Al ratio in the LaAlO_3 films was varied over a wide range from 0.88 to 1.15, and was found to have a strong effect on the interface conductivity. In particular, the carrier density is modulated over more than two orders of magnitude. The film lattice expansion, caused by cation vacancies, is found to be the important functional parameter. These results can be understood to arise from the variations in the electrostatic boundary conditions, and their resolution, with stoichiometry.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Transistor operation and mobility enhancement in top-gated LaAlO_3 / SrTiO_3 heterostructures

We report the operation of LaAlO_3 / SrTiO_3 depletion mode top-gated junction field-effect transistors using a range of LaAlO_3 thicknesses as the top gate insulator. Gated Hall bars show near ideal transistor characteristics at room temperature with on-off ratios greater than 1000. Lower temperature measurements demonstrate a systematic increase in the Hall mobility as the sheet carrier density in the channel is depleted via the top gate, providing a route to higher mobility, lower density electron gases in this system.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Coexistence of two- and three-dimensional Shubnikov-de Haas oscillations in Ar^+ -irradiated KTaO_3

We report the electron doping in the surface vicinity of KTaO_3 by inducing oxygen-vacancies via Ar^+ -irradiation. The doped electrons have high mobility (> 10^4 cm^2/Vs) at low temperatures, and exhibit Shubnikov-de Haas oscillations with both two- and three-dimensional components. A disparity of the extracted in-plane effective mass, compared to the bulk values, suggests mixing of the orbital characters. Our observations demonstrate that Ar^+ -irradiation serves as a flexible tool to study low dimensional quantum transport in 5d semiconducting oxides.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Magnetotransport effects in polar versus non-polar SrTiO3 based heterostructures

Anisotropic magnetoresistance and negative magnetoresistance for in-plane fields are compared for the LaAlO3 /SrTiO3 interface and the symmetric Nb-doped SrTiO3 heterostructure. Both effects are exceptionally strong in LaAlO3 /SrTiO3 . We analyze their temperature, magnetic field and gate voltage dependencies and find them to arise from a Rashba type spin-orbit coupling with magnetic scatterers that have two contributions to their potential: spin exchange and Coulomb interaction. Atomic spin-orbit coupling is sufficient to explain the small effects observed in Nb-doped SrTiO3 . These results clarify contradicting transport interpretations in SrTiO3 -based heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Metal-to-insulator transition in anatase TiO2 thin films induced by growth rate modulation

We demonstrate control of the carrier density of single phase anatase TiO2 thin films by nearly two orders of magnitude by modulating the growth kinetics during pulsed laser deposition, under fixed thermodynamic conditions. The resistivity and the intensity of the photoluminescence spectra of these TiO2 samples, both of which correlate with the number of oxygen vacancies, are shown to depend strongly on the growth rate. A quantitative model is used to explain the carrier density changes.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Scanning SQUID Susceptometry of a paramagnetic superconductor

Scanning SQUID susceptometry images the local magnetization and susceptibility of a sample. By accurately modeling the SQUID signal we can determine the physical properties such as the penetration depth and permeability of superconducting samples. We calculate the scanning SQUID susceptometry signal for a superconducting slab of arbitrary thickness with isotropic London penetration depth, on a non-superconducting substrate, where both slab and substrate can have a paramagnetic response that is linear in the applied field. We derive analytical approximations to our general expression in a number of limits. Using our results, we fit experimental susceptibility data as a function of the sample-sensor spacing for three samples: 1) delta-doped SrTiO3, which has a predominantly diamagnetic response, 2) a thin film of LaNiO3, which has a predominantly paramagnetic response, and 3) a two-dimensional electron layer (2-DEL) at a SrTiO3/AlAlO3 interface, which exhibits both types of response. These formulas will allow the determination of the concentrations of paramagnetic spins and superconducting carriers from fits to scanning SQUID susceptibility measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Strongly spin-orbit coupled two-dimensional electron gas emerging near the surface of polar semiconductors

We investigate the two-dimensional (2D) highly spin-polarized electron accumulation layers commonly appearing near the surface of n-type polar semiconductors BiTeX (X = I, Br, and Cl) by angular-resolved photoemission spectroscopy. Due to the polarity and the strong spin-orbit interaction built in the bulk atomic configurations, the quantized conduction-band subbands show giant Rashba-type spin-splitting. The characteristic 2D confinement effect is clearly observed also in the valence-bands down to the binding energy of 4 eV. The X-dependent Rashba spin-orbit coupling is directly estimated from the observed spin-split subbands, which roughly scales with the inverse of the band-gap size in BiTeX.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Common Origin of the Circular-dichroism Pattern in ARPES of SrTiO3 and CuxBi2Se3

Circular dichroism in the angular distribution (CDAD) of photoelectrons from SrTiO3:Nb and CuxBi2Se3 is investigated by 7-eV laser ARPES. In addition to the well-known node that occurs in CDAD when the incidence plane matches the mirror plane of the crystal, we show that another type of node occurs when the mirror plane of the crystal is vertical to the incidence plane and the electronic state is two dimensional. The flower-shaped CDAD's occurring around the Fermi level of SrTiO3:Nb and around the Dirac point of CuxBi2Se3 are explained on equal footings. We point out that the penetration depth of the topological states of CuxBi2Se3 depends on momentum.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Direct imaging of the coexistence of ferromagnetism and superconductivity at the LaAlO3/SrTiO3 interface

LaAlO3 and SrTiO3 are insulating, nonmagnetic oxides, yet the interface between them exhibits a two-dimensional electron system with high electron mobility,1 superconductivity at low temperatures,2-6 and electric-field-tuned metal-insulator and superconductorinsulator phase transitions.3,6-8 Bulk magnetization and magnetoresistance measurements also suggest some form of magnetism depending on preparation conditions5,9-11 and suggest a tendency towards nanoscale electronic phase separation.10 Here we use local imaging of the magnetization and magnetic susceptibility to directly observe a landscape of ferromagnetism, paramagnetism, and superconductivity. We find submicron patches of ferromagnetism in a uniform background of paramagnetism, with a nonuniform, weak diamagnetic superconducting susceptibility at low temperature. These results demonstrate the existence of nanoscale phase separation as suggested by theoretical predictions based on nearly degenerate interface sub-bands associated with the Ti orbitals.12,13 The magnitude and temperature dependence of the paramagnetic response suggests that the vast majority of the electrons at the interface are localized, and do not contribute to transport measurements.3,6,7 In addition to the implications for magnetism, the existence of a 2D superconductor at an interface with highly broken inversion symmetry and a ferromagnetic landscape in the background suggests the potential for exotic superconducting phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electronic charges and electric potential at LaAlO3/SrTiO3 interfaces studied by core-level photoemission spectroscopy

We studied LaAlO3/SrTiO3 interfaces for varying LaAlO3 thickness by core-level photoemission spectroscopy. In Ti 2p spectra for conducting "n-type" interfaces, Ti3+ signals appeared, which were absent for insulating "p-type" interfaces. The Ti3+ signals increased with LaAlO3 thickness, but started well below the critical thickness of 4 unit cells for metallic transport. Core-level shifts with LaAlO3 thickness were much smaller than predicted by the polar catastrophe model. We attribute these observations to surface defects/adsorbates providing charges to the interface even below the critical thickness.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Fermi surface and superconductivity in low-density high-mobility δ-doped SrTiO3

The electronic structure of low-density n-type SrTiO3 delta-doped heterostructures is investigated by angular dependent Shubnikov-de Haas oscillations. In addition to a controllable crossover from a three- to two-dimensional Fermi surface, clear beating patterns for decreasing dopant layer thicknesses are found. These indicate the lifting of the degeneracy of the conduction band due to subband quantization in the two-dimensional limit. Analysis of the temperature-dependent oscillations shows that similar effective masses are found for all components, associated with the splitting of the light electron pocket. The dimensionality crossover in the superconducting state is found to be distinct from the normal state, resulting in a rich phase diagram as a function of dopant layer thickness.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Intrinsic spin-orbit coupling in superconducting δ-doped SrTiO3 heterostructures

We report the violation of the Pauli limit due to intrinsic spin-orbit coupling in SrTiO3 heterostructures. Via selective doping down to a few nanometers, a two-dimensional superconductor is formed, geometrically suppressing orbital pair-breaking. The spin-orbit scattering is exposed by the robust in-plane superconducting upper critical field, exceeding the Pauli limit by a factor of 4. Transport scattering times several orders of magnitude higher than for conventional thin film superconductors enables a new regime to be entered, where spin-orbit coupling effects arise non-perturbatively.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Subband structure of a two-dimensional electron gas formed at the polar surface of the strong spin-orbit perovskite KTaO$_3$

We demonstrate the formation of a two-dimensional electron gas (2DEG) at the $(100)$ surface of the $5d$ transition-metal oxide KTaO$_3$. From angle-resolved photoemission, we find that quantum confinement lifts the orbital degeneracy of the bulk band structure and leads to a 2DEG composed of ladders of subband states of both light and heavy carriers. Despite the strong spin-orbit coupling, our measurements provide a direct upper bound for potential Rashba spin splitting of only $Δ{k}_\parallel\sim\0.02$ Å$^{-1}$ at the Fermi level. The polar nature of the KTaO$_3(100)$ surface appears to help mediate formation of the 2DEG as compared to non-polar SrTiO$_3(100)$.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Dramatic Mobility Enhancements in Doped SrTiO3 Thin Films by Defect Management

We report bulk-quality n-type SrTiO3 (n-SrTiO3) thin films fabricated by pulsed laser deposition, with electron mobility as high as 6600 cm2 V-1 s-1 at 2 K and carrier density as low as 2.0 x 10^18cm-3 (~ 0.02 at. %), far exceeding previous pulsed laser deposition films. This result stems from precise strontium and oxygen vacancy defect chemistry management, providing a general approach for defect control in complex oxide heteroepitaxy.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Enhancing the electron mobility via delta-doping in SrTiO3

We fabricated high-mobility δ-doped structures in SrTiO3 thin films in order to investigate the low temperature electronic transport properties of confined carriers in this system. An enhancement of the electron mobility above the bulk value was observed as the doped layer thickness decreased. High-field Hall measurements revealed that this mobility enhancement originates from higher-mobility electrons in the undoped clean regions, which have quantum-mechanically broadened from the doped layer. Because of the absence of apparent lattice misfit between the layers, this structure is highly suitable for investigating two-dimensional electron gases in SrTiO3.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Dominant mobility modulation by the electric field effect at the LaAlO_3 / SrTiO_3 interface

Caviglia et al. [Nature (London) 456, 624 (2008)] have found that the superconducting LaAlO_3 / SrTiO_3 interface can be gate modulated. A central issue is to determine the principal effect of the applied electric field. Using magnetotransport studies of a gated structure, we find that the mobility variation is almost five times as large as the sheet carrier density. Furthermore, superconductivity can be suppressed at both positive and negative gate bias. These results indicate that the relative disorder strength strongly increases across the superconductor-insulator transition.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Magnetodielectric Coupling in Nonmagnetic Au/GaAs:Si Schottky Barriers

We report on a heretofore unnoted giant negative magnetocapacitance (>20%) in non-magnetic Au/GaAs:Si Schottky barriers that we attribute to a magnetic field in-duced increase in the binding energy of the shallow donor Si impurity atoms. Depletion capacitance (Cdep) dispersion identifies the impurity ionization and capture processes that give rise to a magnetic field dependent density of ionized impurities. Internal photoemission experiments confirm that the large field-induced shifts in the built-in potential, inferred from 1/Cdep^2 vs voltage measurements, are not due to a field-dependent Schottky barrier height, thus requiring a modification of the abrupt junction approximation that accounts for the observed magnetodielectric coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Multiple conducting carriers generated in LaAlO3/SrTiO3 heterostructures

We have found that there is more than one type of conducting carriers generated in LaAlO3/SrTiO3 heterostructures by comparing the sheet carrier density and mobility from optical transmission spectroscopy with those from dc-transport measurements. When multiple types of carriers exist, optical characterization dominantly reflects the contribution from the high-density carriers whereas dc-transport measurements may exaggerate the contribution of the high-mobility carriers even though they are present at low-density. Since the low-temperature mobilities determined by dc-transport in the LaAlO3/SrTiO3 heterostructures are much higher than those extracted by optical method, we attribute the origin of high-mobility transport to the low-density conducting carriers.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Thickness dependence of the mobility at the LaAlO_3 / SrTiO_3 interface

The electronic transport properties of a series of LaAlO_3 / SrTiO_3 interfaces were investigated, and a systematic thickness dependence of the sheet resistance and magnetoresistance was found for constant growth conditions. This trend occurs above the critical thickness of four unit cells, below which the LaAlO_3 / SrTiO_3 interface is not conducting. A dramatic decrease in mobility of the electron gas of nearly two orders of magnitude was observed with increasing LaAlO_3 thickness from five to 25 unit cells.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Two-Dimensional Confinement of 3d1 Electrons in LaTiO3/LaAlO3 Multilayers

We report spectroscopic ellipsometry measurements of the anisotropy of the interband transitions parallel and perpendicular to the planes of (LaTiO3)n(LaAlO3)5 multilayers with n = 1-3. These provide direct information about the electronic structure of the two-dimensional (2D) 3d^1 state of the Ti ions. In combination with LDA+U calculations, we suggest that 2D confinement in the TiO2 slabs lifts the degeneracy of the t_{2g} states leaving only the planar d_xy orbitals occupied. We outline that these multilayers can serve as a model system for the study of the t_{2g} 2D Hubbard model.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Electronic structure of the Mott insulator LaVO3 in a quantum well geometry

We used x-ray photoemission spectroscopy to investigate the electronic structure of the Mott insulator LaVO3 embedded in LaAlO3. By limiting the upper layer of LaAlO3 to 3 unit cells, the underlying LaVO3 could be probed. The V 2p core-level spectra had both V3+ and V4+ components, and above 2 unit cell thick LaVO3, the structures exhibited spectra similar to bulk samples. The atomically flat surfaces enabled study of the emission angle dependence, which indicates the V4+ is localized to the topmost layer. These results demonstrate the potential for probing interface electronic structure in oxide ultrathin films by surface spectroscopy.

0 citations0 reviewsNo code linkedOpen access