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Coexistence of two- and three-dimensional Shubnikov-de Haas oscillations in Ar^+ -irradiated KTaO_3

We report the electron doping in the surface vicinity of KTaO_3 by inducing oxygen-vacancies via Ar^+ -irradiation. The doped electrons have high mobility (> 10^4 cm^2/Vs) at low temperatures, and exhibit Shubnikov-de Haas oscillations with both two- and three-dimensional components. A disparity of the extracted in-plane effective mass, compared to the bulk values, suggests mixing of the orbital characters. Our observations demonstrate that Ar^+ -irradiation serves as a flexible tool to study low dimensional quantum transport in 5d semiconducting oxides.

preprint2012arXivOpen access
S. HarashimaC. BellM. KimT. YajimaY. HikitaH. Y. Hwang
cond-mat.mes-hallcond-mat.mtrl-sci
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S. HarashimaC. BellM. KimT. YajimaY. HikitaH. Y. Hwang

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