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H. T. Yi

H. T. Yi contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.soft cond-mat.str-el

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preprint2016arXiv

Charge carrier coherence and Hall effect in organic semiconductors

Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model explains the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

preprint2015arXiv

Optical diode effect in the room-temperature multiferroic BiFeO$_3

Multiferroics permit the magnetic control of the electric polarization and electric control of the magnetization. These static magnetoelectric (ME) effects are of enormous interest: The ability to read and write a magnetic state current-free by an electric voltage would provide a huge technological advantage. Dynamic or optical ME effects are equally interesting because they give rise to unidirectional light propagation as recently observed in low-temperature multiferroics. This phenomenon, if realized at room temperature, would allow the development of optical diodes which transmit unpolarized light in one, but not in the opposite direction. Here, we report strong unidirectional transmission in the room-temperature multiferroic BiFeO$_3$ over the gigahertz--terahertz frequency range. Supporting theory attributes the observed unidirectional transmission to the spin-current driven dynamic ME effect. These findings are an important step toward the realization of optical diodes, supplemented by the ability to switch the transmission direction with a magnetic or electric field.

preprint2014arXiv

Multiferroicity with coexisting isotropic and anisotropic spins in Ca$_{3}$Co$_{2-x}$Mn$_{x}$O$_{6}$

We study magnetic and multiferroic behavior in Ca$_3$Co$_{2-x}$Mn$_{x}$O$_6$ ($x \sim$0.97) by high-field measurements of magnetization ($M$), magnetostriction ($L$($H$)/$L$), electric polarization ($P$), and magnetocaloric effect. This study also gives insight into the zero and low magnetic field magnetic structure and magnetoelectric coupling mechanisms. We measured $M$ and $Δ$$L$/$L$ up to pulsed magnetic fields of 92 T, and determined the saturation moment and field. On the controversial topic of the spin states of Co$^{2+}$ and Mn$^{4+}$ ions, we find evidence for $S$ = 3/2 spins for both ions with no magnetic field-induced spin-state crossovers. Our data also indicate that Mn$^{4+}$ spins are quasi-isotropic and develop components in the $ab$-plane in applied magnetic fields of 10 T. These spins cant until saturation at 85 T whereas the Ising Co$^{2+}$ spins saturate by 25 T. Furthermore, our results imply that mechanism for suppression of electric polarization with magnetic fields near 10 T is flopping of the Mn$^{4+}$ spins into the $ab$-plane, indicating that appropriate models must include the coexistence of Ising and quasi-isotropic spins.

preprint2012arXiv

Ultrafast carrier dynamics and radiative recombination in multiferroic BiFeO$_{3}$

We report a comprehensive study of ultrafast carrier dynamics in single crystals of multiferroic BiFeO$_{3}$. Using femtosecond optical pump-probe spectroscopy, we find that the photoexcited electrons relax to the conduction band minimum through electron-phonon coupling with a $\sim$1 picosecond time constant that does not significantly change across the antiferromagnetic transition. Photoexcited electrons subsequently leave the conduction band and primarily decay via radiative recombination, which is supported by photoluminescence measurements. We find that despite the coexisting ferroelectric and antiferromagnetic orders in BiFeO$_{3}$, the intrinsic nature of this charge-transfer insulator results in carrier relaxation similar to that observed in bulk semiconductors.