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H. Sellier

H. Sellier contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2012arXiv

Casimir force measurements in Au-Au and Au-Si cavities at low temperature

We report on measurements of the Casimir force in a sphere-plane geometry using a cryogenic force microscope to move the force probe in situ over different materials. We show how the electrostatic environment of the interacting surfaces plays an important role in weak force measurements and can overcome the Casimir force at large distance. After minimizing these parasitic forces, we measure the Casimir force between a gold-coated sphere and either a gold-coated or a heavily doped silicon surface in the 100-400 nm distance range. We compare the experimental data with theoretical predictions and discuss the consequence of a systematic error in the scanner calibration on the agreement between experiment and theory. The relative force over the two surfaces compares favorably with theory at short distance, showing that this Casimir force experiment is sensitive to the dielectric properties of the interacting surfaces.

preprint2012arXiv

Transport inefficiency in branched-out mesoscopic networks: An analog of the Braess paradox

We present evidence for a counter-intuitive behavior of semiconductor mesoscopic networks that is the analog of the Braess paradox encountered in classical networks. A numerical simulation of quantum transport in a two-branch mesoscopic network reveals that adding a third branch can paradoxically induce transport inefficiency that manifests itself in a sizable conductance drop of the network. A scanning-probe experiment using a biased tip to modulate the transmission of one branch in the network reveals the occurrence of this paradox by mapping the conductance variation as a function of the tip voltage and position.

preprint2010arXiv

Imaging Coulomb Islands in a Quantum Hall Interferometer

In the Quantum Hall regime, near integer filling factors, electrons should only be transmitted through spatially-separated edge states. However, in mesoscopic systems, electronic transmission turns out to be more complex, giving rise to a large spectrum of magnetoresistance oscillations. To explain these observations, recent models put forward that, as edge states come close to each other, electrons can hop between counterpropagating edge channels, or tunnel through Coulomb islands. Here, we use scanning gate microscopy to demonstrate the presence of quantum Hall Coulomb islands, and reveal the spatial structure of transport inside a quantum Hall interferometer. Electron islands locations are found by modulating the tunneling between edge states and confined electron orbits. Tuning the magnetic field, we unveil a continuous evolution of active electron islands. This allows to decrypt the complexity of high magnetic field magnetoresistance oscillations, and opens the way to further local scale manipulations of quantum Hall localized states.

preprint2010arXiv

Scanning-gate microscopy of semiconductor nanostructures: an overview

This paper presents an overview of scanning-gate microscopy applied to the imaging of electron transport through buried semiconductor nanostructures. After a brief description of the technique and of its possible artifacts, we give a summary of some of its most instructive achievements found in the literature and we present an updated review of our own research. It focuses on the imaging of GaInAs-based quantum rings both in the low magnetic field Aharonov-Bohm regime and in the high-field quantum Hall regime. In all of the given examples, we emphasize how a local-probe approach is able to shed new, or complementary, light on transport phenomena which are usually studied by means of macroscopic conductance measurements.