BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

A. Brinkman

A. Brinkman appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hallcond-mat.supr-con

Catalog footprint

What is connected

31works
4topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

31 published item(s)

preprint2021arXiv

Spectroscopic signature of surface states and bunching of bulk subbands in topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ thin films

High quality thin films of the topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ have been deposited on SrTiO$_3$ (111) by molecular beam epitaxy. Their electronic structure was investigated by in situ angle-resolved photoemission spectroscopy and in situ scanning tunneling spectroscopy. The experimental results reveal striking similarities with relativistic ab-initio tight binding calculations. We find that ultrathin slabs of the three-dimensional topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ display topological surface states, surface states with large weight on the outermost Te atomic layer, and dispersive bulk energy levels that are quantized. We observe that the bandwidth of the bulk levels is strongly reduced. These bunched bulk states as well as the surface states give rise to strong peaks in the local density of states.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Gate-tuned Anomalous Hall Effect Driven by Rashba Splitting in Intermixed LaAlO3/GdTiO3/SrTiO3

The Anomalous Hall Effect (AHE) is an important quantity in determining the properties and understanding the behavior of the two-dimensional electron system forming at the interface of SrTiO3-based oxide heterostructures. The occurrence of AHE is often interpreted as a signature of ferromagnetism, but it is becoming more and more clear that also paramagnets may contribute to AHE. We studied the influence of magnetic ions by measuring intermixed LaAlO3/GdTiO3/SrTiO3 at temperatures below 10 K. We find that, as function of gate voltage, the system undergoes a Lifshitz transition, while at the same time an onset of AHE is observed. However, we do not observe clear signs of ferromagnetism. We argue the AHE to be due to the change in Rashba spin-orbit coupling at the Lifshitz transition and conclude that also paramagnetic moments which are easily polarizable at low temperatures and high magnetic filds lead to the presence of AHE, which needs to be taken into account when extracting carrier densities and mobilities.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Andreev reflection in s-type superconductor proximized 3D topological insulator

We investigate transport and shot noise in lateral N-TI-S contacts, where N is a normal metal, TI is a Bi-based three dimensional topological insulator (3D TI), and S is an s-type superconductor. In normal state, the devices are in the elastic diffusive transport regime, as demonstrated by a nearly universal value of the shot noise Fano factor $F_{\rm N}\approx1/3$ in magnetic field and in reference normal contact. In the absence of magnetic field, we identify the Andreev reflection (AR) regime, which gives rise to the effective charge doubling in shot noise measurements. Surprisingly, the Fano factor $F_{\rm AR}\approx0.22\pm0.02$ is considerably reduced in the AR regime compared to $F_{\rm N}$, in contrast to previous AR experiments in normal metals and semiconductors. We suggest that this effect is related to a finite thermal conduction of the proximized, superconducting TI owing to a residual density of states at low energies.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Conductance spectroscopy of a proximity induced superconducting topological insulator

We study the proximity effect between the fully-gapped region of a topological insulator in direct contact with an s-wave superconducting electrode (STI) and the surrounding topological insulator flake (TI) in Au/Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$/Nb devices. The conductance spectra of the devices show the presence of a large induced gap in the STI as well as the induction of superconducting correlations in the normal part of the TI on the order of the Thouless energy. The shape of the conductance modulation around zero-energy varies between devices and can be explained by existing theory of s-wave-induced superconductivity in SNN' (S is a superconductor, N a superconducting proximized material and N' is a normal metal) devices. All the conductance spectra show a conductance dip at the induced gap of the STI.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

In-situ spectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects

Combined in-situ x-ray photoemission spectroscopy, scanning tunnelling spectroscopy and angle resolved photoemission spectroscopy of molecular beam epitaxy grown Bi2Te3 on lattice mismatched substrates reveal high quality stoichiometric thin films with topological surface states without a contribution from the bulk bands at the Fermi energy. The absence of bulk states at the Fermi energy is achieved without counter doping. We observe that the surface morphology and electronic band structure of Bi2Te3 are not affected by in-vacuo storage and exposure to oxygen, whereas major changes are observed when exposed to ambient conditions. These films help define a pathway towards intrinsic topological devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Low carrier concentration crystals of the topological insulator Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$: a magnetotransport study

In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb)$_{2}$(Te,Se)$_{3}$ (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren \textit{et al.} \cite{Ren2011}). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthesized Bi$_{2-x}$Sb${_x}$Te$_{3-y}$Se$_{y}$ single crystals with compositions around $x = 0.5$ and $y = 1.3$. Resistance and Hall effect measurements show high resistivity and record low bulk carrier density for the composition Bi$_{1.46}$Sb$_{0.54}$Te$_{1.7}$Se$_{1.3}$. The analysis of the resistance measured for crystals with different thicknesses within a parallel resistor model shows that the surface contribution to the electrical transport amounts to 97% when the sample thickness is reduced to $1 μ$m. The magnetoconductance of exfoliated BSTS nanoflakes shows 2D weak antilocalization with $α\simeq -1$ as expected for transport dominated by topological surface states.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Observability of surface Andreev bound states in a topological insulator in proximity to an s-wave superconductor

To guide experimental work on the search for Majorana zero-energy modes, we calculate the superconducting pairing symmetry of a three-dimensional topological insulator in combination with an s-wave superconductor. In analogy to the case of nanowires with strong spin-orbit coupling we show how the pairing symmetry changes across different topological regimes. We demonstrate that a dominant p-wave pairing relation is not sufficient to realize a Majorana zero-energy mode useful for quantum computation. Our main result of this paper is the relation between odd-frequency pairing and Majorana zero energy modes by using Green functions techniques in three-dimensional topological insulators in the so-called Majorana regime. We discuss thereafter how the pairing relations in the different regimes can be observed in the shape of the tunneling conductance of an s-wave proximized three-dimensional topological insulator. We will discuss the necessity to incorporate a ferromagnetic insulator to localize the zero-energy bound state to the interface as a Majorana mode.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Transport and thermoelectric properties of the LaAlO$_3$/SrTiO$_3$ interface

The transport and thermoelectric properties of the interface between SrTiO$_3$ and a 26-monolayer thick LaAlO$_3$-layer grown at high oxygen-pressure have been investigated at temperatures from 4.2 K to 100 K and in magnetic fields up to 18 T. For $T>$ 4.2 K, two different electron-like charge carriers originating from two electron channels which contribute to transport are observed. We probe the contributions of a degenerate and a non-degenerate band to the thermoelectric power and develop a consistent model to describe the temperature dependence of the thermoelectric tensor. Anomalies in the data point to an additional magnetic field dependent scattering.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Geometric dependence of Nb-Bi${_2}$Te${_3}$-Nb topological Josephson junction transport parameters

Superconductor-topological insulator-superconductor Josephson junctions have been fabricated in order to study the width dependence of the critical current, normal state resistance and flux periodicity of the critical current modulation in an external field. Previous literature reports suggest anomalous scaling in topological junctions due to the presence of Majorana bound states. However, for most realised devices, one would expect that trivial $2π$-periodic Andreev levels dominate transport. We also observe anomalous scaling behaviour of junction parameters, but the scaling can be well explained by mere geometric effects, such as the parallel bulk conductivity shunt and flux focusing.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Josephson supercurrent in a topological insulator without a bulk shunt

A Josephson supercurrent has been induced into the three-dimensional topological insulator Bi1.5Sb0.5Te1.7Se1.3. We show that the transport in Bi1.5Sb0.5Te1.7Se1.3 exfoliated flakes is dominated by surface states and that the bulk conductivity can be neglected at the temperatures where we study the proximity induced superconductivity. We prepared Josephson junctions with widths in the order of 40 nm and lengths in the order of 50 to 80 nm on several Bi1.5Sb0.5Te1.7Se1.3 flakes and measured down to 30 mK. The Fraunhofer patterns unequivocally reveal that the supercurrent is a Josephson supercurrent. The measured critical currents are reproducibly observed on different devices and upon multiple cooldowns, and the critical current dependence on temperature as well as magnetic field can be well explained by diffusive transport models and geometric effects.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Magnetoresistance from broken spin helicity

The propensity of some materials and multilayers to have a magnetic field dependent resistance, called magnetoresistance, has found commercial applications such as giant magnetoresistance harddisk read heads. But magnetoresistance can also be a powerful probe of electronic and magnetic interactions in matter. For example, magnetoresistance can be used to analyze multiband conductivity, conduction inhomogeneity, localized magnetic moments, and (fractional) Landau level structure. For materials with strong spin-orbit interaction, magnetoresistance can be used as a probe for weak antilocalization or a nontrivial Berry phase, such as in topological insulator surface states. For the three dimensional topological insulators a large and linear magnetoresistance is often used as indication for underlying non-trivial topology, although the origin of this effect has not yet been established. Here, we observe a large magnetoresistance in the conducting bulk state of Bi$_2$Te$_3$. We show that this type of large magnetoresistance is due to the competition between helical spin-momentum locking (i.e. spin rotates with momentum direction) and the unidirectional spin alignment by an applied magnetic field. Warping effects are found to provide the (quasi) linear dependence on magnetic field. We provide a quantitative model for the helicity breaking induced magnetoresistance that can be applied to a vast range of materials, surfaces or interfaces with weak to strong spin-orbit interactions, such as the contemporary oxide interfaces, bulk Rashba systems, and topological insulator surface states.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Nonlocal Andreev reflection, fractional charge and current-phase relation in topological bilayer exciton condensate junctions

We study Andreev reflection and Josephson currents in topological bilayer exciton condensates (TEC). These systems can create 100% spin entangled nonlocal currents with high amplitudes due to perfect nonlocal Andreev reflection. This Andreev reflection process can be gate tuned from a regime of purely retro reflection to purely specular reflection. We have studied the bound states in TEC-TI-TEC Josephson junctions and find a gapless dispersion for perpendicular incidence. The presence of a sharp transition in the supercurrent-phase relationship when the system is in equilibrium is a signature of fractional charge, which can be further revealed in ac measurements faster than relaxation processes via Landau-Zener processes.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Andreev bound states and current-phase relations in three-dimensional topological insulators

To guide the search for the Majorana fermion, we theoretically study superconductor/topological/superconductor (S/TI/S) junctions in an experimentally relevant regime. We find that the striking features present in these systems, including the doubled periodicity of the Andreev bound states (ABSs) due to tunneling via Majorana states, can still be present at high electron densities. We show that via the inclusion of magnetic layers, this 4pi periodic ABS can still be observed in three-dimensional topological insulators, where finite angle incidence usually results in the opening of a gap at zero energy and hence results in a 2pi periodic ABS. Furthermore, we study the Josephson junction characteristics and find that the gap size can be controlled and decreased by tuning the magnetization direction and amplitude. These findings pave the way for designing experiments on S/3DTI/S junctions.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Defect engineering in oxide heterostructures by enhanced oxygen surface exchange

The synthesis of materials with well-controlled composition and structure improves our understanding of their intrinsic electrical transport properties. Recent developments in atomically controlled growth have been shown to be crucial in enabling the study of new physical phenomena in epitaxial oxide heterostructures. Nevertheless, these phenomena can be influenced by the presence of defects that act as extrinsic sources of both doping and impurity scattering. Control over the nature and density of such defects is therefore necessary, are we to fully understand the intrinsic materials properties and exploit them in future device technologies. Here, we show that incorporation of a strontium copper oxide nano-layer strongly reduces the impurity scattering at conducting interfaces in oxide LaAlO3-SrTiO3(001) heterostructures, opening the door to high carrier mobility materials. We propose that this remote cuprate layer facilitates enhanced suppression of oxygen defects by reducing the kinetic barrier for oxygen exchange in the hetero-interfacial film system. This design concept of controlled defect engineering can be of significant importance in applications in which enhanced oxygen surface exchange plays a crucial role.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Hard x-ray photoemission and density functional theory study of the internal electric field in SrTiO3/LaAlO3 oxide heterostructures

A combined experimental and theoretical investigation of the electronic structure of the archetypal oxide heterointerface system LaAlO3 on SrTiO3 is presented. High-resolution, hard x-ray photoemission is used to uncover the occupation of Ti 3d states and the relative energetic alignment - and hence internal electric fields - within the LaAlO3 layer. Firstly, the Ti 2p core level spectra clearly show occupation of Ti 3d states already for two unit cells of LaAlO3. Secondly, the LaAlO3 core levels were seen to shift to lower binding energy as the LaAlO3 overlayer thickness, n, was increased - agreeing with the expectations from the canonical electron transfer model for the emergence of conductivity at the interface. However, not only is the energy offset of only 300meV between n=2 (insulating interface) and n=6 (metallic interface) an order of magnitude smaller than the simple expectation, but it is also clearly not the sum of a series of unit-cell by unit-cell shifts within the LaAlO3 block. Both of these facts argue against the simple charge-transfer picture involving a cumulative shift of the LaAlO3 valence bands above the SrTiO3 conduction bands, resulting in charge transfer only for n>3. Turning to the theoretical data, our density functional simulations show that the presence of oxygen vacancies at the LaAlO3 surface at the 25% level reverses the direction of the internal field in the LaAlO3. Therefore, taking the experimental and theoretical results together, a consistent picture emerges for real-life samples in which nature does not wait until n=4 and already for n=2, mechanisms other than internal-electric-field-driven electron transfer from idealized LaAlO3 to near-interfacial states in the SrTiO3 substrate are active in heading off the incipient polarization catastrophe that drives the physics in these systems.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Thermally excited multi-band conduction in LaAlO3/SrTiO3 heterostructures exhibiting magnetic scattering

Magnetotransport measurements of charge carriers at the interface of a LaAlO3/SrTiO3 heterostructure with 26 unit cells of LaAlO3 show Hall resistance and magnetoresistance which at low and high temperatures is described by a single channel of electron-like charge carriers. At intermediate temperatures, we observe non-linear Hall resistance and positive magnetoresistance, establishing the presence of at least two electron-like channels with significantly different mobilities and carrier concentrations. These channels are separated by 6 meV in energy and their temperature dependent occupation and mobilities are responsible for the observed transport properties of the interface. We observe that one of the channels has a mobility that decreases with decreasing temperature, consistent with magnetic scattering in this channel.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Band offsets and density of Ti3+ states probed by X-ray photoemission on LaAlO3/SrTiO3 heterointerfaces and their LaAlO3 and SrTiO3 bulk precursors

A set of LaAlO3/SrTiO3 (LAO-STO) interfaces has been probed by X-ray photoemission spectroscopy in order to contrast and compare the effects of LAO overlayer thickness and of the growth conditions on the electronic properties of these heterostructures. These effects are tracked by considering the band-offset and the density of Ti3+ states, respectively. It is shown that the dominant effects on the local electronic properties are determined by the O2 partial pressure during the growth. In particular, a low P(O2) yields Ti3+ states with higher density and lower binding energy as compared to the sample grown at high P(O2) or to the bare STO reference sample. Band offset effects are all below about 0.7 eV, but a careful analysis of Ti 2p and Sr 3d peaks shows that valence band offsets can be at the origin of the observed peak width. In particular, the largest offset is shown by the conducting sample, that displays the largest Ti 2p and Sr 3d peak widths.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Magnetotransport and induced superconductivity in Bi based three-dimensional topological insulators

The surface of a 3D topological insulator is conducting and the topologically nontrivial nature of the surface states is observed in experiments. It is the aim of this paper to review and analyze experimental observations with respect to the magnetotransport in Bi-based 3D topological insulators, as well as the superconducting transport properties of hybrid structures consisting of superconductors and these topological insulators. The helical spin-momentum coupling of the surface state electrons becomes visible in quantum corrections to the conductivity and magnetoresistance oscillations. An analysis will be provided of the reported magnetoresistance, also in the presence of bulk conductivity shunts. Special attention is given to the large and linear magnetoresistance. Superconductivity can be induced in topological superconductors by means of the proximity effect. The induced supercurrents, Josephson effects and current-phase relations will be reviewed. These materials hold great potential in the field of spintronics and the route towards Majorana devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Optically excited multi-band conduction in LaAlO3/SrTiO3 heterostructures

The low-temperature resistance of a conducting LaAlO3/SrTiO3 interface with a 10 nm thick LaAlO3 film decreases by more than 50% after illumination with light of energy higher than the SrTiO3 band-gap. We explain our observations by optical excitation of an additional high mobility electron channel, which is spatially separated from the photo-excited holes. After illumination, we measure a strongly non-linear Hall resistance which is governed by the concentration and mobility of the photo-excited carriers. This can be explained within a two-carrier model where illumination creates a high-mobility electron channel in addition to a low-mobility electron channel which exists before illumination.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Optimizing the Majorana character of SQUIDs with topologically non-trivial barriers

We have modeled SQUIDs with topologically non-trivial superconducting junctions and performed an optimization study on the Majorana fermion detection. We find that the SQUID parameters beta_L, and beta_C can be used to increase the ratio of Majorana tunneling to standard Cooper pair tunneling by more than two orders of magnitude. Most importantly, we show that dc SQUIDs including topologically trivial components can still host strong signatures of the Majorana fermion. This paves the way towards the experimental verification of the theoretically predicted Majorana fermion.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quantum oscillations and subband properties of the two-dimensional electron gas at the LaAlO3/SrTiO3 interface

We have performed high field magnetotransport measurements to investigate the interface electron gas in LaAlO3/SrTiO3 heterostructures. Shubnikov-de Haas oscillations reveal several 2D conduction subbands with carrier effective masses between 1 and 3 m_e, quantum mobilities of order 3000 cm^2/V s, and band edges only a few millielectronvolts below the Fermi energy. Measurements in tilted magnetic fields confirm the 2D character of the electron gas, and show evidence of inter-subband scattering.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Conductance anisotropy and linear magnetoresistance in La2-xSrxCuO4 thin films

We have performed a detailed study of conductance anisotropy and magnetoresistance (MR) of La2-xSrxCuO4 (LSCO) thin films (0.10 < x < 0.25). These two observables are promising for the detection of stripes. Subtle features of the conductance anisotropy are revealed by measuring the transverse resistance Rxy in zero magnetic field. It is demonstrated that the sign of Rxy depends on the orientation of the LSCO Hall bar with respect to the terrace structure of the substrate. Unit-cell-high substrate step edges must therefore be a dominant nucleation source for antiphase boundaries during film growth. We show that the measurement of Rxy is sensitive enough to detect the cubic-tetragonal phase transition of the SrTiO3(100) (STO) substrate at 105 K. The MR of LSCO thin films shows for 0.10 < x < 0.25 a non-monotonic temperature dependence, resulting from the onset of a linear term in the MR above 90 K. We show that the linear MR scales with the absolute Hall resistivity, with the constant of proportionality independent of temperature. Such scaling suggests that the linear MR originates from current distortions induced by structural or electronic inhomogeneities. The possible role of stripes for both the MR and the conductance anisotropy is discussed throughout the paper.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Experimental realization of SQUIDs with topological insulator junctions

We demonstrate topological insulator (Bi$_2$Te$_3$) dc SQUIDs, based on superconducting Nb leads coupled to nano-fabricated Nb-Bi$_2$Te$_3$-Nb Josephson junctions. The high reproducibility and controllability of the fabrication process allows the creation of dc SQUIDs with parameters that are in agreement with design values. Clear critical current modulation of both the junctions and the SQUID with applied magnetic fields have been observed. We show that the SQUIDs have a periodicity in the voltage-flux characteristic of $Φ_0$, of relevance to the ongoing pursuit of realizing interferometers for the detection of Majorana fermions in superconductor- topological insulator structures.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Josephson supercurrent through a topological insulator surface state

Topological insulators are characterized by an insulating bulk with a finite band gap and conducting edge or surface states, where charge carriers are protected against backscattering. These states give rise to the quantum spin Hall effect without an external magnetic field, where electrons with opposite spins have opposite momentum at a given edge. The surface energy spectrum of a threedimensional topological insulator is made up by an odd number of Dirac cones with the spin locked to the momentum. The long-sought yet elusive Majorana fermion is predicted to arise from a combination of a superconductor and a topological insulator. An essential step in the hunt for this emergent particle is the unequivocal observation of supercurrent in a topological phase. Here, we present the first measurement of a Josephson supercurrent through a topological insulator. Direct evidence for Josephson supercurrents in superconductor (Nb) - topological insulator (Bi2Te3) - superconductor e-beam fabricated junctions is provided by the observation of clear Shapiro steps under microwave irradiation, and a Fraunhofer-type dependence of the critical current on magnetic field. The dependence of the critical current on temperature and length shows that the junctions are in the ballistic limit. Shubnikov-de Haas oscillations in magnetic fields up to 30 T reveal a topologically non-trivial two-dimensional surface state. We argue that the ballistic Josephson current is hosted by this surface state despite the fact that the normal state transport is dominated by diffusive bulk conductivity. The lateral Nb-Bi2Te3-Nb junctions hence provide prospects for the realization of devices supporting Majorana fermions.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Long range spin supercurrents in ferromagnetic CrO$_2$ using a multilayer contact structure

e report measurements of long ranged supercurrents through ferromagnetic and fully spin-polarized CrO$_2$ deposited on TiO$_2$ substrates. In earlier work, we found supercurrents in films grown on sapphire but not on TiO$_2$. Here we employed a special contact arrangement, consisting of a Ni/Cu sandwich between the film and the superconducting amorphous Mo$_{70}$Ge$_{30}$ electrodes. The distance between the contacts was almost a micrometer, and we find the critical current density to be significantly higher than found in the films deposited on sapphire. We argue this is due to spin mixing in the Ni/Cu/CrO$_2$ layer structure, which is helpful in the generation of the odd-frequency spin triplet correlations needed to carry the supercurrent.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Nonlocal Cooper pair Splitting in a pSn Junction

Perfect Cooper pair splitting is proposed, based on crossed Andreev reflection (CAR) in a p-type semiconductor - superconductor - n-type semiconductor (pSn) junction. The ideal splitting is caused by the energy filtering that is enforced by the bandstructure of the electrodes. The pSn junction is modeled by the Bogoliubov-de Gennes equations and an extension of the Blonder-Tinkham-Klapwijk theory beyond the Andreev approximation. Despite a large momentum mismatch, the CAR current is predicted to be large. The proposed straightforward experimental design and the 100% degree of pureness of the nonlocal current open the way to pSn structures as high quality sources of entanglement.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Upper limit to magnetism in LaAlO3/SrTiO3 heterostructures

Using polarized neutron reflectometry (PNR) we measured the neutron spin dependent reflectivity from four LaAlO3/SrTiO3 superlattices. This experiment implies that the upper limit for the magnetization induced by an 11 T magnetic field at 1.7 K is 2 emu/cm3. SQUID magnetometry of the superlattices sporadically finds an enhanced moment, possibly due to experimental artifacts. These observations set important restrictions on theories which imply a strongly enhanced magnetism at the interface between LaAlO3 and SrTiO3.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Parallel electron-hole bilayer conductivity from electronic interface reconstruction

The perovskite SrTiO$_3$-LaAlO$_3$ structure has advanced to a model system to investigate the rich electronic phenomena arising at polar interfaces. Using first principles calculations and transport measurements we demonstrate that an additional SrTiO$_3$ capping layer prevents structural and chemical reconstruction at the LaAlO$_3$ surface and triggers the electronic reconstruction at a significantly lower LaAlO$_3$ film thickness than for the uncapped systems. Combined theoretical and experimental evidence (from magnetotransport and ultraviolet photoelectron spectroscopy) suggests two spatially separated sheets with electron and hole carriers, that are as close as 1 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Andreev spectra and subgap bound states in multiband superconductors

The theory of Andreev conductance is formulated for junctions involving normal metals (N) and multiband superconductors (S) and applied to the case of superconductors with nodeless extended $s_{\pm}$-wave order parameter symmetry, as possibly realized in the recently discovered ferro pnictides. We find qualitative differences from tunneling into s-wave or d-wave superconductors that may help to identify such a state. First, interband interference leads to a suppression of Andreev reflection in the case of a highly transparent N/S interface and to a current deficit in the tunneling regime. Second, surface bound states may appear, both at zero and at non-zero energies. These effects do not occur in multiband superconductors without interband sign reversal, though the interference can still strongly modify the conductance spectra.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Orbital reconstruction and two-dimensional electron gas at the LaAlO3/SrTiO3 interface

Conventional two-dimensional electron gases are realized by engineering the interfaces between semiconducting compounds. In 2004, Ohtomo and Hwang discovered that an electron gas can be also realized at the interface between large gap insulators made of transition metal oxides [1]. This finding has generated considerable efforts to clarify the underlying microscopic mechanism. Of particular interest is the LaAlO3/SrTiO3 system, because it features especially striking properties. High carrier mobility [1], electric field tuneable superconductivity [2] and magnetic effects [3], have been found. Here we show that an orbital reconstruction is underlying the generation of the electron gas at the LaAlO3/SrTiO3 n-type interface. Our results are based on extensive investigations of the electronic properties and of the orbital structure of the interface using X-ray Absorption Spectroscopy. In particular we find that the degeneracy of the Ti 3d states is fully removed, and that the Ti 3dxy levels become the first available states for conducting electrons.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Electronically coupled complementary interfaces between perovskite band insulators

Perovskite oxides exhibit a plethora of exceptional electronic properties, providing the basis for novel concepts of oxide-electronic devices. The interest in these materials is even extended by the remarkable characteristics of their interfaces. Studies on single epitaxial connections between the two wide-bandgap insulators LaAlO3 and SrTiO3 have revealed them to be either high-mobility electron conductors or insulating, depending on the atomic stacking sequences. In the latter case they are conceivably positively charged. For device applications, as well as for basic understanding of the interface conduction mechanism, it is important to investigate the electronic coupling of closely-spaced complementary interfaces. Here we report the successful realization of such electronically coupled complementary interfaces in SrTiO3 - LaAlO3 thin film multilayer structures, in which the atomic stacking sequence at the interfaces was confirmed by quantitative transmission electron microscopy. We found a critical separation distance of 6 perovskite unit cell layers, corresponding to approximately 2.3 nm, below which a decrease of the interface conductivity and carrier density occurs. Interestingly, the high carrier mobilities characterizing the separate electron doped interfaces are found to be maintained in coupled structures down to sub-nanometer interface spacing.

0 citations0 reviewsNo code linkedOpen access