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Researcher profile

H. Backe

H. Backe contributes to research discovery and scholarly infrastructure.

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physics.acc-phphysics.comp-phphysics.data-an

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Published work

5 published item(s)

preprint2022arXiv

Beam steering with quasi-mosaic bent silicon single crystals -- Computer simulations for 855 MeV and 6.3 GeV electrons and comparison with experiments

Monte Carlo simulations have been performed for 855 MeV and 6.3 GeV electrons channeling in silicon single crystals at circular bent (111) planes. The aim was to identify critical experimental parameters which effect the volume-deflection and volume-capture characteristics. To these belongs the angular alignment of the crystal with respect to the nominal beam direction. The continuum potential picture has been utilized. The simulation results were compared with experiments. It turns out that the assumption of an anticlastic bending of the crystal, bent on the principle of the quasi-mosaic effect, is not required to reproduce the experimental observations.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

De-channeling in terms of instantaneous transition rates -- Computer simulations for 855 MeV electrons at (110) planes of diamond

Monte-Carlo simulation calculation have been performed for 855 MeV electrons channeling in (110) planes of a diamond single crystal. The continuum potential picture has been utilized. Both, the transverse potential and the angular distributions of the scattered electrons at screened atoms are based on the Doyle-Turner scattering factors which were extrapolated with the functional dependence of the Molière representation to large momentum transfers. Scattering cross-sections at bound electrons have been derived for energies less than 30 keV from the double differential cross-section as function of both, energy and momentum transfer, taking into account also longitudinal and transverse excitations. For energies above 30 keV the Møller cross-section is used. The dynamics of the particle in the continuum transverse potential has been described classically. Results of the channeling process are presented in terms of instantaneous transition rates as function of the penetration depth, indicating that channeling can be described by a single exponential function only after the equilibration phase has been reached after about 15 $μ$m. As a byproduct, improved drift and diffusion coefficients entering the Fokker-Planck equation have been derived with which its predictive power can be improved.

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preprint2022arXiv

Design study for a 500 MeV positron beam at the Mainz Microtron MAMI

A design study has been performed for a positron beam with an energy of 500 MeV to be realized at the applied physics area of the Mainz Microtron MAMI. Positrons will be created after pair conversion of bremsstrahlung, produced by the 855 MeV electron beam af MAMI in a tungsten converter target. From the two conceivable geometries (i) pair conversion in the bremsstrahlung converter target itself, and (ii) bremsstrahlung pair conversion in a separated lead foil, the former was considered in detail. Positrons will be energy selected within an outside open electron beam-line bending magnet, and bent back by an additional sector magnet. Magnetic focusing elements in between are designed to prepare in a well shielded positron target chamber about 6 m away from the target a beam with horizontal and vertical emittances of epsilon_v = 0.055 pi mm mrad (1 sigma), and epsilon_h = 0.12 pi mm mrad (1 sigma), respectively, for a 10 micro m thick amorphous tungsten target and negligible momentum spread. At an accepted positron band width of 1 MeV, spots are expected vertically with an angular spread of 0.064 mrad and a size of 5.0 mm (FWHM), and horizontally with an angular spread of 0.64 mrad and a size of 7.7 mm (FWHM). The positron yield amounts to 13.1 per second, 1 MeV positron energy band width, and 1 nA electron beam current.

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preprint2020arXiv

Channeling experiments at planar diamond and silicon single crystals with electrons from the Mainz Microtron MAMI

Line structures were observed for (110) planar channeling of electrons in a diamond single crystal even at a beam energy of 180 MeV. This observation motivated us to initiate dechanneling length measurements as function of the beam energy since the occupation of quantum states in the channeling potential is expected to enhance the dechanneling length. High energy loss signals, generated as a result of emission of a bremsstrahlung photon with about half the beam energy at channeling of 450 and 855 MeV electrons, were measured as function of the crystal thickness. The analysis required additional assumptions which were extracted from the numerical solution of the Fokker-Planck equation. Preliminary results for diamond are presented. In addition, we reanalyzed dechanneling length measurements at silicon single crystals performed previously at the Mainz Microtron MAMI at beam energies between 195 and 855 MeV from which we conclude that the quality of our experimental data set is not sufficient to derive definite conclusions on the dechanneling length. Our experimental results are below the predictions of the Fokker-Planck equation and somewhat above the results of simulation calculations of A. V. Korol and A. V. Solov'yov et al. on the basis of the MBN Explorer simulation package. We somehow conservatively conclude that the prediction of the asymptotic dechanneling length on the basis of the Fokker-Planck equation represents an upper limit.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electron channeling experiments with bent silicon single crystals -- a reanalysis based on a modified Fokker-Planck equation

A surprising small dechanneling length was observed at (111) channeling of ultrarelativistic electrons in a 60 $μ$m thick silicon single crystal with a bending radius of 0.15 m. The experiments were conducted at beam energies between 3.35 and 14 GeV at the Facility for Advanced Accelerator Experimental Tests (FACET at SLAC, USA). It is shown in this paper that the small dechanneling lengths can well be reproduced with a modified Fokker-Planck equation for plane crystals in which a crystal bending has been heuristically introduced. Encouraged by this result experiments have been reconsidered which were performed at the Mainz Microtron MAMI with (110) silicon undulator crystals. The results obtained with the modified Fokker-Planck equation suggest that the observed rather low undulator peak intensity originates from the strongly reduced dechanneling length of electrons in the bent sections of the undulator. A scaling law derived on the basis of the modified Fokker-Planck equation reveals optimized parameters of electron based undulators as possible radiation sources in the $X$- and $γ$-ray region.

0 citations0 reviewsNo code linkedOpen access