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Gustavo M. Dalpian

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2022arXiv

Hole conductivity through a defect band in $\rm ZnGa_2O_4$

Semiconductors with wide band gap (3.0 eV), high dielectric constant (> 10), good thermal dissipation, and capable of $n$- and $p$-type doping are highly desirable for high-energy power electronic devices. Recent studies indicate that $\rm ZnGa_2O_4$ may be suitable for these applications, standing out as an alternative to $\rm Ga_2O_3$. The simple face centered cubic spinel structure of $\rm ZnGa_2O_4$ results in isotropic electronic and optical properties, in contrast to the large anisotropic properties of the $β$-monoclinic $\rm Ga_2O_3$. In addition, $\rm ZnGa_2O_4$ has shown, on average, better thermal dissipation and potential for $n$- and $p$-type conductivity. Here we use density functional theory and hybrid functional calculations to investigate the electronic, optical, and point defect properties of $\rm ZnGa_2O_4$, focusing on the possibility for $n$- and p-type conductivity. We find that the cation antisite $\rm Ga_{Zn}$ is the lowest energy donor defect that can lead to unintentional $n$-type conductivity. The stability of self-trapped holes (small hole polarons) and the high formation energy of acceptor defects make it difficult to achieve $p$-type conductivity. However, with excess of Zn, forming $\rm Zn_{(1+2x)}Ga_{2(1-x)}O_4$ alloys display an intermediate valence band, facilitating $p$-type conductivity. Due to the localized nature of this intermediate valence band, $p$-type conductivity by polaron hopping is expected, explaining the low mobility and low hole density observed in recent experiments.

preprint2022arXiv

Machine Learning Study of the Magnetic Ordering in 2D Materials

Magnetic materials have been applied in a large variety of technologies, from data storage to quantum devices. The development of 2D materials has opened new arenas for magnetic compounds, even when classical theories discourage their examination. Here we propose a machine-learning-based strategy to predict and understand magnetic ordering in 2D materials. This strategy couples the prediction of the existence of magnetism in 2D materials using random forest and the SHAP method with material maps defined by atomic features predicting the magnetic ordering (ferromagnetic or antiferromagnetic). While the random forest model predicts magnetism with an accuracy of 86%, the material maps obtained by the SISSO method have an accuracy of about 90% in predicting the magnetic ordering. Our model indicates that 3d transition metals, halides, and structural clusters with regular transition metals sublattices have a positive contribution in the total weight deciding the existence of magnetism in 2D compounds. This behavior is associated with the competition between crystal field and exchange splitting. The machine learning model also indicates that the atomic SOC is a determinant feature for the identification of the patterns separating ferro- from antiferro-magnetic order. The proposed strategy is used to identify novel 2D magnetic compounds which, together with the fundamental trends in the chemical and structural space, paves novel routes for experimental exploration.

preprint2020arXiv

The polymorphous nature of cubic halide perovskites

It has been long known that numerous halide and oxide perovskites can have non-ideal octahedra, showing tilting, rotation, and metal atom displacements. It has also been known that compounds that have at low temperatures a single structural motif ("monomorphous structures") could become disordered at higher temperatures, resulting in non-ideal octahedra as an entropy effect. What is shown here is that in many cubic halide perovskites and some oxides compounds a distribution of different low-symmetry octahedra ("polymorphous networks") emerge already from the minimization of the systems internal energy, i.e., they represent the intrinsic, preferred low temperature pattern of chemical bonding. Thermal disorder effects build up at elevated temperatures on top of such low temperature polymorphous networks. Compared with the monomorphous counterparts, the polymorphous networks have lower predicted total energies (enhanced stability), larger band gaps and dielectric constants now dominated by the ionic part, and agrees much more closely with the observed pair distribution functions. The nominal cubic perovskites (Pm-3m) structure deduced from X-Ray diffraction is actually a macroscopically averaged, high symmetry configuration, which should not be used to model electronic properties, given that the latter reflect a low symmetry local configuration.

preprint2020arXiv

Tuning Hydrogen Adsorption and Electronic Properties from Graphene to Fluorographone

Graphene functionalization by hydrogen and fluorine has been proposed as a route to modulate its reactivity and electronic properties. However, until now, proposed systems present degradation and limited hydrogen adsorption capacity. In this study, combining first-principles calculations based on density functional theory (DFT) and reactive molecular dynamics, we analyze the tuning of hydrogen adsorption and electronic properties in fluorinated and hydrogenated monolayer graphenes. Our results indicate that fluorine adsorption promotes stronger carbon$-$hydrogen bonds. By changing the concentration of fluorine and hydrogen, charge density transfer and electronic properties such as the band gap and spin-splitting can be tailored, increasing their potential applicability for electronic and spintronic devices. Despite fluorine not affecting the total H incorporation, the $\textit{ab initio}$ molecular dynamics results suggest that 3% fluorinated graphene increases hydrogen anchoring, indicating the hydrogenated and fluorinated graphenes potential for hydrogen storage and related applications.

preprint2019arXiv

Zeeman-type spin splitting in non-magnetic three-dimensional compounds: Materials prediction and electrical control

Despite its potential for device application, the non-magnetic Zeeman effect has only been predicted and observed in two-dimensional compounds. We demonstrate that non-centrosymmetric three-dimensional compounds can also exhibit a Zeeman-type spin splitting, allowing the splitting control by changing the growth direction of slabs formed by these compounds. We determine the required conditions for this effect: $i$) non-centrosymmetric including polar and non-polar point groups, $ii$) valence band maximum or conduction band minimum in a generic $k$-point, i.e., non-time-reversal-invariant momentum, and $iii$) zero magnetic moment. Using these conditions as filters, we perform a material screening to systematically search for these systems in the aflow-ICSD database. We find 20 material candidates featuring the Zeeman-type effect. We also found that the spin-splitting in confined systems can be controlled by an external electric field, which in turns can induce a metal-insulator transition. We believe that the Zeeman-type effect in three-dimensional compounds can potentially be used for spin-filtering devices.

preprint2015arXiv

Resistive Switching in Nanodevices

Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains unknown. We show that the different resistive states are due to different spontaneously charged states, characterized by different `band bending' solutions of Poisson's equation. For an insulator with mainly donor type defects, the low-resistivity state is characterized by a negatively charged insulator due to convex band bending, and the high-resistivity state by a positively charged insulator due to concave band bending; vice versa for insulators with mainly acceptor type defects. These multiple solutions coexist only for nanoscale devices and for bias voltages limited by the switching threshold values, where the system charge spontaneously changes and the system switches to another resistive state. We outline the general principles how this functionality depends on material properties and defect abundance of the insulator `storage medium', and propose a new magnetic memristor device with increased storage capacity.

preprint2005arXiv

Transition from Ferromagnetism to Antiferromagnetism in Ga$_{1-x}$Mn$_x$N

Using density functional theory, we study the magnetic stability of the Ga$_{1-x}$Mn$_x$N alloy system. We show that unlike Ga$_{1-x}$Mn$_x$As, which shows only ferromagnetic (FM) phase, Ga$_{1-x}$Mn$_x$N can be stable in either FM or antiferromagnetic phases depending on the alloy concentration. The magnetic order can also be altered by applying pressure or with charge compensation. A unified model is used to explain these behaviors.