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Alexandre R. Rocha

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Published work

3 published item(s)

preprint2025arXiv

First-Principles Nanocapacitor Simulations of the Optical Dielectric Constant in Water Ice

We introduce a combined density functional theory (DFT) and non-equilibrium Green's function (NEGF) framework to compute the capacitance of nanocapacitors and directly extract the dielectric response of a sub-nanometer dielectric under bias. We identify that at the nanoscale conventional capacitance evaluations based on stored charge per unit voltage suffer from an ill-posed partitioning of electrode and dielectric charge. This partitioning directly impacts the geometric definition of capacitance through the capacitor width, which in turn makes the evaluation of dielectric response uncertain. This ambiguous separation further induces spurious interfacial polarizability when analyzed via maximally localized Wannier functions. Focusing on crystalline ice, we develop a robust charge-separation protocol that yields unique capacitance-derived polarizability and dielectric constants, unequivocally demonstrating that confinement neither alters ice's intrinsic electronic response nor its insensitivity to proton order. Our results lay the groundwork for rigorous interpretation of capacitor measurements in low-dimensional dielectric materials.

preprint2019arXiv

Ab initio modelling of spin relaxation lengths in disordered graphene nanoribbons†

The spin-dependent transport properties of armchair graphene nanoribbons in the presence of extrinsic spin-orbit coupling induced by a random distribution of Nickel adatoms is studied. By combining a recursive Green's function formalism with density functional theory, we explore the influence of ribbon length and metal adatom concentration on the conductance. At a given length, we observed a significant enhancement of the spin-flip channel around resonances and at energies right above the Fermi level. We also estimate the spin-relaxation length, finding values on the order of tens of micrometers at low Ni adatom concentrations. This study is conducted at singular ribbon lengths entirely from fully ab-initio methods, providing indirectly evidence that the Dyakonov-Perel spin relaxation mechanism might be the dominant at low concentrations as well as the observation of oscillations in the spin-polarization.

preprint2015arXiv

Resistive Switching in Nanodevices

Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains unknown. We show that the different resistive states are due to different spontaneously charged states, characterized by different `band bending' solutions of Poisson's equation. For an insulator with mainly donor type defects, the low-resistivity state is characterized by a negatively charged insulator due to convex band bending, and the high-resistivity state by a positively charged insulator due to concave band bending; vice versa for insulators with mainly acceptor type defects. These multiple solutions coexist only for nanoscale devices and for bias voltages limited by the switching threshold values, where the system charge spontaneously changes and the system switches to another resistive state. We outline the general principles how this functionality depends on material properties and defect abundance of the insulator `storage medium', and propose a new magnetic memristor device with increased storage capacity.