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Guowei He

Guowei He appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.flu-dynmath.PRmath.APmath.DS

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Published work

11 published item(s)

preprint2025arXiv

Data-driven detached-eddy simulations based on explicit algebraic stress expressions for turbulent flows

This work proposes a data-driven explicit algebraic stress-based detached-eddy simulation (DES) method. Despite the widespread use of data-driven methods in model development for both Reynolds-averaged Navier-Stokes (RANS) and large-eddy simulations (LES), their applications to DES remain limited. The challenge mainly lies in the absence of modelled stress data, the requirement for proper length scales in RANS and LES branches, and the maintenance of a reasonable switching behaviour. The data-driven DES method is constructed based on the algebraic stress equation. The control of RANS/LES switching is achieved through the eddy viscosity in the linear part of the modelled stress, under the $\ell^2-ω$ DES framework. Three model coefficients associated with the pressure-strain terms and the LES length scale are represented by a neural network as functions of scalar invariants of velocity gradient. The neural network is trained using velocity data with the ensemble Kalman method, thereby circumventing the requirement for modelled stress data. Moreover, the baseline coefficient values are incorporated as additional reference data to ensure reasonable switching behaviour. The proposed approach is evaluated on two challenging turbulent flows, i.e., the secondary flow in a square duct and the separated flow over a bump. The trained model achieves significant improvements in predicting mean flow statistics compared to the baseline model. This is attributed to improved predictions of the modelled stress. The trained model also exhibits reasonable switching behaviour, enlarging the LES region to resolve more turbulent structures. Furthermore, the model shows satisfactory generalization capabilities for both cases in similar flow configurations.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

On the wavenumber-frequency spectra of wall pressure fluctuations in turbulent channel flows

The characteristics of the wavenumber-frequency spectra of the rapid, slow and total wall pressure fluctuations are investigated using direct numerical simulation (DNS) of turbulent channel flow up to $\Rey_τ\approx 1000$. For the wavenumber-frequency spectra of the total wall pressure fluctuations, a valley-like behavior of contour lines in the sub-convective region is found, which may be linked to the Kraichnan-Phillips theorem. For the decomposition of the wall pressure spectra, it is commonly assumed in previous studies that the cross spectral density (CSD) between the rapid and slow components of the wall pressure fluctuations can be neglected. Yet no experimental or numerical evidence is available for either confirming or disproving this assumption. In this paper, we use DNS data to quantitatively evaluate this assumption. Emphasizes are put on the error in decibel scale caused by neglecting the CSD between the rapid and slow components of the wall pressure fluctuations. It is found that this assumption is approximately accurate for one- and two-dimensional spectra, but causes a large magnitude of error in the three-dimensional wavenumber-frequency spectra. An error of 5dB is observed in the sub-convective region and such a large error is observed for a wide range of Reynolds numbers ($180\le\Rey_τ\le 1000$). The analyses show that the assumption of neglecting the CSD needs to be applied carefully at the scales falling in the sub-convective region.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Formation of a Buffer Layer for Graphene on C-face SiC{0001}

Graphene films prepared by heating the SiC(000-1) surface (the C-face of the {0001} surfaces) in a Si-rich environment are studied using low-energy electron diffraction (LEED) and low-energy electron microscopy (LEEM). Upon graphitization, an interface with rt(43) x rt(43)-R7.6 degree symmetry is observed by in situ LEED. After oxidation, the interface displays rt(3) x rt(3)-R30 degree symmetry. Electron reflectivity measurements indicate that these interface structures arise from a graphene-like "buffer layer" that forms between the graphene and the SiC, similar to that observed on Si-face SiC. From a dynamical LEED structure calculation for the oxidized C-face surface, it is found to consist of a graphene layer sitting on top of a silicate (Si2O3) layer, with the silicate layer having the well-known structure as previously studied on bare SiC(000-1) surfaces. Based on this result, the structure of the interface prior to oxidation is discussed.

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preprint2014arXiv

Friedel Oscillation-Induced Energy Gap Manifested as Transport Asymmetry at Monolayer-Bilayer Graphene Boundaries

We show that Friedel charge oscillation near an interface opens a gap at the Fermi energy for electrons with wave vectors perpendicular to the interface. If the Friedel gaps on two sides of the interface are different, a nonequlibrium effect - shifting of these gaps under bias - leads to asymmetric transport upon reversing the bias polarity. The predicted transport asymmetry is revealed by scanning tunneling potentiometry at monolayer-bilayer interfaces in epitaxial graphene on SiC (0001). This intriguing interfacial transport behavior opens a new avenue towards novel quantum functions such as quantum switching.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Temporal decorrelations in compressible isotropic turbulence

Temporal decorrelations in compressible isotropic turbulence are studied using the space-time correlation theory and direct numerical simulation. A swept-wave model is developed for dilatational components while the classic random sweeping model is proposed for solenoidal components. The swept-wave model shows that the temporal decorrelations in dilatational fluctuations are dominated by two physical processes: random sweeping and wave propagation. These models are supported by the direct numerical simulation of compressible isotropic turbulence, in the sense of that all curves of normalized time correlations for different wavenumbers collapse into a single one using the normalized time separations. The swept-wave model is further extended to account for a constant mean velocity.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Ensemble Averaging for Dynamical Systems under Fast Oscillating Random Boundary Conditions

This paper is devoted to provide a theoretical underpinning for ensemble forecasting with rapid fluctuations in body forcing and in boundary conditions. Ensemble averaging principles are proved under suitable `mixing' conditions on random boundary conditions and on random body forcing. The ensemble averaged model is a nonlinear stochastic partial differential equation, with the deviation process (i.e., the approximation error process) quantified as the solution of a linear stochastic partial differential equation.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Formation of Graphene on SiC(000-1) Surfaces in Disilane and Neon Environments

The formation of graphene on the SiC(000-1) surface (the C-face of the {0001} surfaces) has been studied, utilizing both disilane and neon environments. In both cases, the interface between the graphene and the SiC is found to be different than for graphene formation in vacuum. A complex low-energy electron diffraction pattern with rt(43) x rt(43)-R\pm7.6° symmetry is found to form at the interface. An interface layer consisting essentially of graphene is observed, and it is argued that the manner in which this layer covalently bonds to the underlying SiC produces the rt(43) x rt(43)-R\pm7.6° structure [i.e. analogous to the 6rt(3) x 6rt(3)-R30° "buffer layer" that forms on the SiC(0001) surface (the Si-face)]. Oxidation of the surface is found to modify (eliminate) the rt(43) x rt(43)-R\pm7.6° structure, which is interpreted in the same manner as the known "decoupling" that occurs for the Si-face buffer layer.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Graphene formed on SiC under various environments: Comparison of Si-face and C-face

The morphology of graphene on SiC {0001} surfaces formed in various environments including ultra-high vacuum, 1 atm of argon, and 10^-6 to 10^-4 Torr of disilane is studied by atomic force microscopy, low-energy electron microscopy, and Raman spectroscopy. The graphene is formed by heating the surface to 1100 - 1600 C, which causes preferential sublimation of the Si atoms. The argon atmosphere or the background of disilane decreases the sublimation rate so that a higher graphitization temperature is required, thus improving the morphology of the films. For the (0001) surface, large areas of monolayer-thick graphene are formed in this way, with the size of these areas depending on the miscut of the sample. Results on the (000-1) surface are more complex. This surface graphitizes at a lower temperature than for the (0001) surface and consequently the growth is more three-dimensional. In an atmosphere of argon the morphology becomes even worse, with the surface displaying markedly inhomogeneous nucleation, an effect attributed to unintentional oxidation of the surface during graphitization. Use of a disilane environment for the (000-1) surface is found to produce improved morphology, with relatively large areas of monolayer-thick graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quantifying Model Uncertainties in the Space of Probability Measures

Due to lack of scientific understanding, some mechanisms may be missing in mathematical modeling of complex phenomena in science and engineering. These mathematical models thus contain some uncertainties such as uncertain parameters. One method to estimate these parameters is based on pathwise observations, i.e., quantifying model uncertainty in the space of sample paths for system evolution. Another method is devised here to estimate uncertain parameters, or unknown system functions, based on experimental observations of probability distributions for system evolution. This is called the quantification of model uncertainties in the space of probability measures. A few examples are presented to demonstrate this method, analytically or numerically.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Interface Structure of Graphene on SiC(000-1)

Graphene films prepared by heating the SiC(000-1) surface (the C-face of the {0001} surfaces) in vacuum or in a Si-rich environment are compared. It is found that different interface structures occur for the two situations. The former yields a well known 3x3 reconstructed interface, whereas the latter produces an interface with rt(43)xrt(43)-R\pm7.6 degrees symmetry. This structure is shown to contain a graphene-like layer with properties similar to the 6rt(3)x6rt(3)-R30 degrees "buffer layer" that forms on the Si(0001) surface (the Si-face).

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Comparison of Graphene Formation on C-face and Si-face SiC {0001} Surfaces

The morphology of graphene formed on the (000-1) surface (the C-face) and the (0001) surface (the Si-face) of SiC, by annealing in ultra-high vacuum or in an argon environment, is studied by atomic force microscopy and low-energy electron microscopy. The graphene forms due to preferential sublimation of Si from the surface. In vacuum, this sublimation occurs much more rapidly for the C-face than the Si-face, so that 150 C lower annealing temperatures are required for the C-face to obtain films of comparable thickness. The evolution of the morphology as a function of graphene thickness is examined, revealing significant differences between the C-face and the Si-face. For annealing near 1320 C, graphene films of about 2 monolayers (ML) thickness are formed on the Si-face, but 16 ML is found for the C-face. In both cases, step bunches are formed on the surface. For the Si-face, layer-by-layer growth of the graphene is observed in areas between the step bunches. At 1170 C, for the C-face, a more 3-dimensional type of growth is found. The average thickness is then about 4 ML, but with a wide variation in local thickness (2 - 7 ML) over the surface. The spatial arrangement of constant-thickness domains are found to be correlated with step bunches on the surface, which form in a more restricted manner than at 1320 C. It is argued that these domains are somewhat disconnected, so that no strong driving force for planarization of the film exists. In a 1-atm argon environment, permitting higher growth temperatures, the graphene morphology for the Si-face is found to become more layer-by-layer-like even for graphene thickness as low as 1 ML. However, for the C-face the morphology becomes much worse, with the surface displaying markedly inhomogeneous nucleation of the graphene. It is demonstrated that these surfaces are unintentionally oxidized, which accounts for the inhomogeneous growth.

0 citations0 reviewsNo code linkedOpen access