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Researcher profile

N. Srivastava

N. Srivastava contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciastro-ph.SRastro-ph.IM

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Published work

12 published item(s)

preprint2022arXiv

A holistic approach to understand Helium enrichment in Interplanetary coronal mass ejections: New insights

Despite helium abundance (AHe = nH/nHe) is ~ 8 % at the solar photospheric/chromospheric heights, AHe can be found to exceed 8% in interplanetary coronal mass ejections (ICMEs) on many occasions. Although various factors like interplanetary shocks, chromospheric evaporation and "sludge removal" have been separately invoked in the past to address the AHe enhancements in ICMEs, none of these processes could explain the variability of AHe in ICMEs comprehensively. Based on extensive analysis of 275 ICME events, we show that there is a solar activity variation of ICME averaged AHe values. The investigation also reveals that the first ionization potential effect as well as coronal temperature are not the major contributing factors for AHe enhancements in ICMEs. Investigation on concurrent solar flares and ICME events for 63 cases reveals that chromospheric evaporation in tandem with gravitational settling determine the AHe enhancements and variabilities beyond 8% in ICMEs. While chromospheric evaporation releases the helium from chromosphere into the corona, the gravitationally settled helium is thrown out during the ICMEs.We show that the intensity and timing of the preceding flares from the same active region from where the CME erupts are important factors to understand the AHe enhancements in ICMEs.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Evidence for distinctive changes in the solar wind helium abundance in cycle 24

The relative abundance of alpha particles with respect to proton, usually expressed as $A_{He}$ = ($n_α/n_p$)*100, is known to respond to solar activity although changes in its behaviour in the last four solar cycles are not known. In this letter, by systematically analysing inter-calibrated $A_{He}$ data obtained from the first Lagrangian point of the Sun-Earth system, we show that $A_{He}$ variations are distinctively different in solar cycle 24 as compared to the last three cycles. The frequency of $A_{He}$ = 2-3% events is significantly higher in slow/intermediate solar winds in cycle 24 as opposed to the dominance of the typical $A_{He}$ = 4-5% events in the previous three cycles. Further, the occurrence of $A_{He}$ $\geq$ 10% events is significantly reduced in cycle 24. Not only that, the changes in delay of $A_{He}$ with respect to peak sunspot numbers are less sensitive to changes in solar wind velocity in cycle 24. The investigation suggests that the coronal magnetic field configuration started undergoing systematic changes starting from cycle 23 and this altered magnetic field configuration affected the way helium got processed and depleted in the solar atmosphere.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Formation of a Buffer Layer for Graphene on C-face SiC{0001}

Graphene films prepared by heating the SiC(000-1) surface (the C-face of the {0001} surfaces) in a Si-rich environment are studied using low-energy electron diffraction (LEED) and low-energy electron microscopy (LEEM). Upon graphitization, an interface with rt(43) x rt(43)-R7.6 degree symmetry is observed by in situ LEED. After oxidation, the interface displays rt(3) x rt(3)-R30 degree symmetry. Electron reflectivity measurements indicate that these interface structures arise from a graphene-like "buffer layer" that forms between the graphene and the SiC, similar to that observed on Si-face SiC. From a dynamical LEED structure calculation for the oxidized C-face surface, it is found to consist of a graphene layer sitting on top of a silicate (Si2O3) layer, with the silicate layer having the well-known structure as previously studied on bare SiC(000-1) surfaces. Based on this result, the structure of the interface prior to oxidation is discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Narrow-Band Imaging System for the Multi-application Solar Telescope at Udaipur Solar Observatory: Characterization of Lithium Niobate Etalons

Multi-application Solar Telescope is a 50 cm off-axis Gregorian telescope that has been installed at the lake site of Udaipur Solar Observatory. For quasi-simultaneous photospheric and chromospheric observations, a narrow-band imager has been developed as one of the back-end instruments for this telescope. Narrow-band imaging is achieved using two lithium niobate Fabry-Perot etalons working in tandem as a filter. This filter can be tuned to different wavelengths by changing either voltage, tilt or temperature of the etalons. To characterize the etalons, a Littrow spectrograph was set up, in conjunction with a 15 cm Carl Zeiss Coudé solar telescope. The etalons were calibrated for the solar spectral lines FeI 6173 Å, and CaII 8542 Å. In this work, we discuss the characterization of the Fabry-Perot etalons, specifically the temperature and voltage tuning of the system for the spectral lines proposed for observations. We present the details of the calibration set-up and various tuning parameters. We also present solar images obtained using the system parameters. We also present solar images obtained using the system.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Low-energy Electron Reflectivity from Graphene

Low-energy reflectivity of electrons from single- and multi-layer graphene is examined both theoretically and experimentally. A series of minima in the reflectivity over the energy range of 0 - 8 eV are found, with the number of minima depending on the number of graphene layers. Using first-principles computations, it is demonstrated that a free standing n-layer graphene slab produces n-1 reflectivity minima. This same result is also found experimentally for graphene supported on SiO2. For graphene bonded onto other substrates it is argued that a similar series of reflectivity minima is expected, although in certain cases an additional minimum occurs, at an energy that depends on the graphene-substrate separation and the effective potential in that space.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Low-Energy Electron Reflectivity of Graphene on Copper and other Substrates

The reflectivity of low energy electrons from graphene on copper substrates is studied both experimentally and theoretically. Well-known oscillations in the reflectivity of electrons with energies 0 - 8 eV above the vacuum level are observed in the experiment. These oscillations are reproduced in theory, based on a first-principles density functional description of interlayer states forming for various thicknesses of multilayer graphene. It is demonstrated that n layers of graphene produce a regular series of n-1 minima in the reflectance spectra, together with a possible additional minimum associated with an interlayer state forming between the graphene and the substrate. Both (111) and (001) orientations of the copper substrates are studied. Similarities in their reflectivity spectra arise from the interlayer states, whereas differences are found because of the different Cu band structures along those orientations. Results for graphene on other substrates, including Pt(111) and Ir(111), are also discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Formation of Graphene on SiC(000-1) Surfaces in Disilane and Neon Environments

The formation of graphene on the SiC(000-1) surface (the C-face of the {0001} surfaces) has been studied, utilizing both disilane and neon environments. In both cases, the interface between the graphene and the SiC is found to be different than for graphene formation in vacuum. A complex low-energy electron diffraction pattern with rt(43) x rt(43)-R\pm7.6° symmetry is found to form at the interface. An interface layer consisting essentially of graphene is observed, and it is argued that the manner in which this layer covalently bonds to the underlying SiC produces the rt(43) x rt(43)-R\pm7.6° structure [i.e. analogous to the 6rt(3) x 6rt(3)-R30° "buffer layer" that forms on the SiC(0001) surface (the Si-face)]. Oxidation of the surface is found to modify (eliminate) the rt(43) x rt(43)-R\pm7.6° structure, which is interpreted in the same manner as the known "decoupling" that occurs for the Si-face buffer layer.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Graphene formed on SiC under various environments: Comparison of Si-face and C-face

The morphology of graphene on SiC {0001} surfaces formed in various environments including ultra-high vacuum, 1 atm of argon, and 10^-6 to 10^-4 Torr of disilane is studied by atomic force microscopy, low-energy electron microscopy, and Raman spectroscopy. The graphene is formed by heating the surface to 1100 - 1600 C, which causes preferential sublimation of the Si atoms. The argon atmosphere or the background of disilane decreases the sublimation rate so that a higher graphitization temperature is required, thus improving the morphology of the films. For the (0001) surface, large areas of monolayer-thick graphene are formed in this way, with the size of these areas depending on the miscut of the sample. Results on the (000-1) surface are more complex. This surface graphitizes at a lower temperature than for the (0001) surface and consequently the growth is more three-dimensional. In an atmosphere of argon the morphology becomes even worse, with the surface displaying markedly inhomogeneous nucleation, an effect attributed to unintentional oxidation of the surface during graphitization. Use of a disilane environment for the (000-1) surface is found to produce improved morphology, with relatively large areas of monolayer-thick graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Interface Structure of Graphene on SiC(000-1)

Graphene films prepared by heating the SiC(000-1) surface (the C-face of the {0001} surfaces) in vacuum or in a Si-rich environment are compared. It is found that different interface structures occur for the two situations. The former yields a well known 3x3 reconstructed interface, whereas the latter produces an interface with rt(43)xrt(43)-R\pm7.6 degrees symmetry. This structure is shown to contain a graphene-like layer with properties similar to the 6rt(3)x6rt(3)-R30 degrees "buffer layer" that forms on the Si(0001) surface (the Si-face).

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Comparison of Graphene Formation on C-face and Si-face SiC {0001} Surfaces

The morphology of graphene formed on the (000-1) surface (the C-face) and the (0001) surface (the Si-face) of SiC, by annealing in ultra-high vacuum or in an argon environment, is studied by atomic force microscopy and low-energy electron microscopy. The graphene forms due to preferential sublimation of Si from the surface. In vacuum, this sublimation occurs much more rapidly for the C-face than the Si-face, so that 150 C lower annealing temperatures are required for the C-face to obtain films of comparable thickness. The evolution of the morphology as a function of graphene thickness is examined, revealing significant differences between the C-face and the Si-face. For annealing near 1320 C, graphene films of about 2 monolayers (ML) thickness are formed on the Si-face, but 16 ML is found for the C-face. In both cases, step bunches are formed on the surface. For the Si-face, layer-by-layer growth of the graphene is observed in areas between the step bunches. At 1170 C, for the C-face, a more 3-dimensional type of growth is found. The average thickness is then about 4 ML, but with a wide variation in local thickness (2 - 7 ML) over the surface. The spatial arrangement of constant-thickness domains are found to be correlated with step bunches on the surface, which form in a more restricted manner than at 1320 C. It is argued that these domains are somewhat disconnected, so that no strong driving force for planarization of the film exists. In a 1-atm argon environment, permitting higher growth temperatures, the graphene morphology for the Si-face is found to become more layer-by-layer-like even for graphene thickness as low as 1 ML. However, for the C-face the morphology becomes much worse, with the surface displaying markedly inhomogeneous nucleation of the graphene. It is demonstrated that these surfaces are unintentionally oxidized, which accounts for the inhomogeneous growth.

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preprint2010arXiv

Thickness monitoring of graphene on SiC using low-energy electron diffraction

The formation of epitaxial graphene on SiC is monitored in-situ using low-energy electron diffraction (LEED). The possibility of using LEED as an in-situ thickness monitor of the graphene is examined. The ratio of primary diffraction spot intensities for graphene compared to SiC is measured for a series of samples of known graphene thickness (determined using low-energy electron microscopy). It is found that this ratio is effective for determining graphene thicknesses in the range 1 to 3 monolayers. Effects of a distribution of graphene thicknesses on this method of thickness determination are considered.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Morphology of Graphene on SiC(000-1) Surfaces

Graphene is formed on SiC(000-1) surfaces (the so-called C-face of the crystal) by annealing in vacuum, with the resulting films characterized by atomic force microscopy, Auger electron spectroscopy, scanning Auger microscopy and Raman spectroscopy. Morphology of these films is compared with the graphene films grown on SiC(0001) surfaces (the Si-face). Graphene forms a terraced morphology on the C-face, whereas it forms with a flatter morphology on the Si-face. It is argued that this difference occurs because of differing interface structures in the two cases. For certain SiC wafers, nanocrystalline graphite is found to form on top of the graphene.

0 citations0 reviewsNo code linkedOpen access