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Source author record

Gunther Roelkens

Gunther Roelkens appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
physics.opticsphysics.app-phphysics.atom-phphysics.chem-phphysics.ins-det

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Published work

8 published item(s)

preprint2020arXiv

An on-chip III-V-semiconductor-on-silicon laser frequency comb for gas-phase molecular spectroscopy in real-time

Frequency combs, spectra of evenly-spaced narrow phase-coherent laser lines, have revolutionized precision measurements. On-chip frequency comb generators hold much promise for fully-integrated instruments of time and frequency metrology. While outstanding developments are being reported with Kerr, quantum cascade and microring electro-optic combs, the field of high-resolution multiplexed gas-phase spectroscopy has remained inaccessible to such devices, because of their large line spacing, their small number of usable comb lines, the intensity variations between their comb lines, and their limited photonic integrability. Here we identify a path to broadband gas-phase spectroscopy on a chip. We design a low-noise III-V-on-silicon comb generator on a photonic chip, that emits a flat-top spectrum of 1400 lines at a repetition frequency of 1.0 GHz, a feature never approached by other ultra-miniaturized comb synthesizers. With dual-comb spectroscopy, our near-infrared electrically-pumped laser records high-resolution (1 GHz) sensitive multiplexed spectra with resolved comb lines, in times as short as 5 microseconds. Isotope-resolved 12C/13C detection in carbon monoxide is performed within 1 millisecond. With further developments, entire high-resolution spectroscopy laboratories-on-a-chip may be manufactured at the wafer scale. In environmental sensing, broad networks of spectrometers could be densely field-deployed to simultaneously monitor, in real time, sources and sinks of greenhouse gases, industrial pollution or noxious emissions of motor vehicles.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Second Harmonic Generation Enabled by Longitudinal Electric Field Components in Photonic Wire Waveguides

We investigate type I second harmonic generation in III-V semiconductor wire waveguides aligned with a crystallographic axis. In this direction, because of the single nonzero tensor element of III-V semiconductors, only frequency conversion by mixing with the longitudinal components of the optical fields is allowed. We experimentally study the impact of the propagation direction on the conversion efficiency and confirm the role played by the longitudinal components through the excitation of an antisymmetric second harmonic higher order mode.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

On-chip optical event horizon

The interaction of waves in nonlinear Kerr waveguides are, under some circumstances, similar to the physics occurring at the horizon of black and white holes. Here, we investigate this analogy in an integrated nonlinear photonic structure through the reflection of a continuous wave on an intense pulse. The resulting frequency conversion of the continuous wave is experimentally demonstrated in a silicon photonic wire waveguide and confirmed by simulations using the generalized nonlinear Schrödinger equation. This demonstration paves the way to efficient all-optical signal processing functionality integrated on a CMOS-compatible waveguide platform.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

An octave spanning mid-infrared frequency comb generated in a silicon nanophotonic wire waveguide

We demonstrate an octave-spanning frequency comb with a spectrum covering wavelengths from 1,540 nm up to 3,200 nm. The supercontinuum is generated by pumping a 1-cm long dispersion engineered silicon wire waveguide by 70 fs pulses with an energy of merely 15 pJ. We confirm the phase coherence of the output spectrum by beating the supercontinuum with narrow bandwidth CW lasers. We show that the experimental results are in agreement with numerical simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Coherent supercontinuum generation in a silicon photonic wire in the telecommunication wavelength range

We demonstrate a fully coherent supercontinuum spectrum spanning 500 nm from a silicon-on-insulator photonic wire waveguide pumped at 1575 nm wavelength. An excellent agreement with numerical simulations is reported. The simulations also show that a high level of two-photon absorption can essentially enforce the coherence of the spectral broadening process irrespective of the pump pulse duration.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Dispersive wave emission and supercontinuum generation in a silicon wire waveguide pumped around the 1550 nm telecommunication wavelength

We experimentally and numerically study dispersive wave emission, soliton fission and supercontinuum generation in a silicon wire at telecommunication wavelengths. Through dispersion engineering, we experimentally confirm a previously reported numerical study [1] and show that the emission of resonant radiation from the solitons can lead to the generation of a supercontinuum spanning over 500 nm. An excellent agreement with numerical simulations is observed.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Bridging the Mid-Infrared-to-Telecom Gap with Silicon Nanophotonic Spectral Translation

Expanding far beyond traditional applications in optical interconnects at telecommunications wavelengths, the silicon nanophotonic integrated circuit platform has recently proven its merits for working with mid-infrared (mid-IR) optical signals in the 2-8 μm range. Mid-IR integrated optical systems are capable of addressing applications including industrial process and environmental monitoring, threat detection, medical diagnostics, and free-space communication. Rapid progress has led to the demonstration of various silicon components designed for the on-chip processing of mid-IR signals, including waveguides, vertical grating couplers, microcavities, and electrooptic modulators. Even so, a notable obstacle to the continued advancement of chip-scale systems is imposed by the narrow-bandgap semiconductors, such as InSb and HgCdTe, traditionally used to convert mid-IR photons to electrical currents. The cryogenic or multi-stage thermo-electric cooling required to suppress dark current noise, exponentially dependent upon the ratio Eg/kT, can limit the development of small, low-power, and low-cost integrated optical systems for the mid-IR. However, if the mid-IR optical signal could be spectrally translated to shorter wavelengths, for example within the near-infrared telecom band, photodetectors using wider bandgap semiconductors such as InGaAs or Ge could be used to eliminate prohibitive cooling requirements. Moreover, telecom band detectors typically perform with higher detectivity and faster response times when compared with their mid-IR counterparts. Here we address these challenges with a silicon-integrated approach to spectral translation, by employing efficient four-wave mixing (FWM) and large optical parametric gain in silicon nanophotonic wires.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

On-chip parametric amplification with 26.5~dB gain at telecommunication wavelengths using CMOS-compatible hydrogenated amorphous silicon waveguides

We present the first study of parametric amplification in hydrogenated amorphous silicon waveguides. Broadband on/off amplification up to 26.5~dB at telecom wavelength is reported. Measured nonlinear parameter is 770~$\textrm{W}^{-1} \textrm{m}^{-1}$, nonlinear absorption 28~$\textrm{W}^{-1} \textrm{m}^{-1}$, bandgap $1.61$~eV.

0 citations0 reviewsNo code linkedOpen access