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Roel Baets

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Published work

14 published item(s)

preprint2020arXiv

Ultra-sensitive refractive index gas sensor with functionalized silicon nitride photonic circuits

Portable and cost-effective gas sensors are gaining demand for a number of environmental, biomedical and industrial applications, yet current devices are confined into specialized labs and cannot be extended to general use. Here, we demonstrate a part-per-billion-sensitive refractive index gas sensor on a photonic chip based on silicon nitride waveguides functionalized with a mesoporous silica top-cladding layer. Low-concentration chemical vapors are detected by monitoring the output spectral pattern of an integrated Mach-Zehnder interferometer having one coated arm exposed to the gas vapors. We retrieved a limit of detection of 65 ppb, 247 ppb and 1.6 ppb for acetone, isopropyl alcohol and ethanol, respectively. Our on-chip refractive index sensor provides, to the best of our knowledge, an unprecedented sensitivity for low gas concentrations based on photonic integrated circuits. As such, our results herald the implementation of compact, portable and inexpensive devices for on-site and real-time environmental monitoring and medical diagnostics.

preprint2016arXiv

Nanophotonic waveguide enhanced Raman spectroscopy of biological submonolayers

Characterizing a monolayer of biological molecules has been a major challenge. We demonstrate nanophotonic wave-guide enhanced Raman spectroscopy (NWERS) of monolayers in the near-infrared region, enabling real-time measurements of the hybridization of DNA strands and the density of sub-monolayers of biotin-streptavidin complex immobilized on top of a photonics chip. NWERS is based on enhanced evanescent excitation and collection of spontaneous Raman scattering near nanophotonic waveguides, which for a one centimeter silicon nitride waveguide delivers a signal that is more than four orders of magnitude higher in comparison to a confocal Raman microscope. The reduced acquisition time and specificity of the signal allows for a quantitative and real-time characterization of surface species, hitherto not possible using Raman spectroscopy. NWERS provides a direct analytic tool for monolayer research and also opens a route to compact microscope-less lab-on-a-chip devices with integrated sources, spectrometers and detectors fabricated using a mass-producible CMOS technology platform.

preprint2016arXiv

Single mode waveguide platform for spontaneous and surface-enhanced on-chip Raman spectroscopy

We review an on-chip approach for spontaneous Raman spectroscopy and Surface Enhanced Raman Spectroscopy (SERS) based on evanescent excitation of the analyte as well as evanescent collection of the Raman signal using Complementary Metal Oxide Semiconductor (CMOS) compatible single mode waveguides. The signal is either directly collected from the analyte molecules or via plasmonic nanoantennas integrated on top of the waveguides. Flexibility in the design of the geometry of the waveguide, and/or the geometry of the antennas, enables optimization of the collection efficiency. Furthermore the sensor can be integrated with additional functionality (sources, detectors, spectrometers) on the same chip. In this paper, the basic theoretical concepts are introduced to identify the key design parameters and some proof-of-concept experimental results are reviewed.

preprint2016arXiv

Unifying Brillouin scattering and cavity optomechanics

So far, Brillouin scattering and cavity optomechanics were mostly disconnected branches of research -- although both deal with photon-phonon coupling. This begs for the development of a broader theory that contains both fields. Here, we derive the dynamics of optomechanical cavities from that of Brillouin-active waveguides. This explicit transition elucidates the link between phenomena such as Brillouin amplification and electromagnetically induced transparency. It proves that effects familiar from cavity optomechanics all have traveling-wave partners, but not vice versa. We reveal a close connection between two parameters of central importance in these fields: the Brillouin gain coefficient and the zero-point optomechanical coupling rate. This enables comparisons between systems as diverse as ultracold atom clouds, plasmonic Raman cavities and nanoscale silicon waveguides. In addition, back-of-the-envelope calculations show that unobserved effects, such as photon-assisted amplification of traveling phonons, are now accessible in existing systems. Finally, we formulate both circuit- and cavity-oriented optomechanics in terms of vacuum coupling rates, cooperativities and gain coefficients, thus reflecting the similarities in the underlying physics.

preprint2015arXiv

Net on-chip Brillouin gain based on suspended silicon nanowires

The century-old study of photon-phonon coupling has seen a remarkable revival in the past decade. Driven by early observations of dynamical back-action, the field progressed to ground-state cooling and the counting of individual phonons. A recent branch investigates the potential of traveling-wave, optically broadband photon-phonon interaction in silicon circuits. Here, we report continuous-wave Brillouin gain exceeding the optical losses in a series of suspended silicon beams, a step towards selective on-chip amplifiers. We obtain efficiencies up to $10^{4} \, \text{W}^{-1}\text{m}^{-1}$, the highest to date in the phononic gigahertz range. We also find indications that geometric disorder poses a significant challenge towards nanoscale phonon-based technologies.

preprint2015arXiv

Surface enhanced Raman spectroscopy using a single mode nanophotonic-plasmonic platform

Surface Enhanced Raman Spectroscopy (SERS) is a well-established technique for enhancing Raman signals. Recently photonic integrated circuits have been used, as an alternative to microscopy based excitation and collection, to probe SERS signals from external metallic nanoparticles. However, in order to develop quantitative on-chip SERS sensors, integration of dedicated nanoplasmonic antennas and waveguides is desirable. Here we bridge this gap by demonstrating for the first time the generation of SERS signals from integrated bowtie nanoantennas, excited and collected by a single mode waveguide, and rigorously quantify the enhancement process. The guided Raman power generated by a 4-Nitrothiophenol coated bowtie antenna shows an 8 x 10^6 enhancement compared to the free-space Raman scattering. An excellent correspondence is obtained between the theoretically predicted and observed absolute Raman power. This work paves the way towards fully integrated lab-on-a-chip systems where the single mode SERS-probe can be combined with other photonic, fluidic or biological functionalities.

preprint2014arXiv

An octave spanning mid-infrared frequency comb generated in a silicon nanophotonic wire waveguide

We demonstrate an octave-spanning frequency comb with a spectrum covering wavelengths from 1,540 nm up to 3,200 nm. The supercontinuum is generated by pumping a 1-cm long dispersion engineered silicon wire waveguide by 70 fs pulses with an energy of merely 15 pJ. We confirm the phase coherence of the output spectrum by beating the supercontinuum with narrow bandwidth CW lasers. We show that the experimental results are in agreement with numerical simulations.

preprint2014arXiv

Interaction between light and highly confined hypersound in a silicon photonic nanowire

In the past decade, there has been a surge in research at the boundary between photonics and phononics. Most efforts centered on coupling light to motion in a high-quality optical cavity, typically geared towards observing the quantum state of a mechanical oscillator. It was recently predicted that the strength of the light-sound interaction would increase drastically in nanoscale silicon photonic wires. Here we demonstrate, for the first time, such a giant overlap between near-infrared light and gigahertz sound co-localized in a small-core silicon wire. The wire is supported by a tiny pillar to block the path for external phonon leakage, trapping $\mathbf{10} \; \textbf{GHz}$ phonons in an area below $\mathbf{0.1 \; \boldsymbolμ}\textbf{m}^{\mathbf{2}}$. Since our geometry can be coiled up to form a ring cavity, it paves the way for complete fusion between the worlds of cavity optomechanics and Brillouin scattering. The result bodes well for the realization of low-footprint optically-pumped lasers/sasers and delay lines on a densely integrated silicon chip.

preprint2013arXiv

Analysis of enhanced stimulated Brillouin scattering in silicon slot waveguides

Stimulated Brillouin scattering has attracted renewed interest with the promise of highly tailorable integration into the silicon photonics platform. However, significant Brillouin amplification in silicon waveguides has yet to be shown. In an effort to engineer a structure with large photon-phonon coupling, we analyzed both forward and backward Brillouin scattering in high-index-contrast silicon slot waveguides. The calculations predict that gradient forces enhance the Brillouin gain in narrow slots. We estimate a currently feasible gain of about $10^{5} \, \text{W}^{-1}\text{m}^{-1}$, which is an order of magnitude larger than in a stand-alone silicon wire. Such efficient coupling could enable a host of Brillouin technologies on a mass-producible silicon chip.

preprint2013arXiv

Comment on "Linear and passive silicon optical isolator" in Scientific Reports 2, 674

Wang et al. [1] demonstrated different power transmission coefficients for forward and backward propagation in simulation and experiment. From such a demonstration, the central claim of their paper is that "the spatial inversion symmetry breaking diode can construct an optical isolator in no conflict with any reciprocal principle". Their claim contradicts the Lorentz reciprocity theorem, from which it is well known that one cannot construct an isolator this way.

preprint2013arXiv

Silicon-on-insulator integrated source of polarization-entangled photons

We report the experimental generation of polarization-entangled photons at telecommunication wavelengths using spontaneous four-wave mixing in silicon-on-insulator wire waveguides. The key component is a 2D coupler that transforms path entanglement into polarization entanglement at the output of the device. Using quantum state tomography we find that the produced state has fidelity 88% with a pure non-maximally entangled state. The produced state violates the CHSH Bell inequality by S=2.37\pm0.19.

preprint2012arXiv

Bridging the Mid-Infrared-to-Telecom Gap with Silicon Nanophotonic Spectral Translation

Expanding far beyond traditional applications in optical interconnects at telecommunications wavelengths, the silicon nanophotonic integrated circuit platform has recently proven its merits for working with mid-infrared (mid-IR) optical signals in the 2-8 μm range. Mid-IR integrated optical systems are capable of addressing applications including industrial process and environmental monitoring, threat detection, medical diagnostics, and free-space communication. Rapid progress has led to the demonstration of various silicon components designed for the on-chip processing of mid-IR signals, including waveguides, vertical grating couplers, microcavities, and electrooptic modulators. Even so, a notable obstacle to the continued advancement of chip-scale systems is imposed by the narrow-bandgap semiconductors, such as InSb and HgCdTe, traditionally used to convert mid-IR photons to electrical currents. The cryogenic or multi-stage thermo-electric cooling required to suppress dark current noise, exponentially dependent upon the ratio Eg/kT, can limit the development of small, low-power, and low-cost integrated optical systems for the mid-IR. However, if the mid-IR optical signal could be spectrally translated to shorter wavelengths, for example within the near-infrared telecom band, photodetectors using wider bandgap semiconductors such as InGaAs or Ge could be used to eliminate prohibitive cooling requirements. Moreover, telecom band detectors typically perform with higher detectivity and faster response times when compared with their mid-IR counterparts. Here we address these challenges with a silicon-integrated approach to spectral translation, by employing efficient four-wave mixing (FWM) and large optical parametric gain in silicon nanophotonic wires.

preprint2011arXiv

Comment to "Nonreciprocal Light Propagation in a Silicon Photonic Circuit"

In the article "Nonreciprocal Light Propagation in a Silicon Photonic Circuit" (Science 333, 729-733 (2011) a nonreciprocal waveguide system based on a combination of silicon, dielectrics and metals is reported. In this Comment it is explained that the interpretation with respect to nonreciprocity in this paper is incorrect and conflicts with the fundamental Lorentz reciprocity theorem. It is further pointed out that a previous publication already introduced the device concept.

preprint2011arXiv

On-chip parametric amplification with 26.5~dB gain at telecommunication wavelengths using CMOS-compatible hydrogenated amorphous silicon waveguides

We present the first study of parametric amplification in hydrogenated amorphous silicon waveguides. Broadband on/off amplification up to 26.5~dB at telecom wavelength is reported. Measured nonlinear parameter is 770~$\textrm{W}^{-1} \textrm{m}^{-1}$, nonlinear absorption 28~$\textrm{W}^{-1} \textrm{m}^{-1}$, bandgap $1.61$~eV.