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Researcher profile

Guilhem Larrieu

Guilhem Larrieu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.opticscond-mat.otherEmerging Technologiesphysics.app-phphysics.comp-ph

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Published work

8 published item(s)

preprint2021arXiv

Hyper-doped silicon nanoantennas and metasurfaces for tunable infrared plasmonics

We present the experimental realization of ordered arrays of hyper-doped silicon nanodisks, which exhibit a localized surface plasmon resonance. The plasmon is widely tunable in a spectral window between 2 and 5 $μ$m by adjusting the free carrier concentration between 10$^{20}$ and 10$^{21}$ cm$^{-3}$. We show that strong infrared light absorption can be achieved with all-silicon plasmonic metasurfaces employing nano-structures with dimensions as low as 100\,nm in diameter and 23 nm in height. Our numerical simulations show an excellent agreement with the experimental data and provide physical insights on the impact of the nanostructure shape as well as of near-field effects on the optical properties of the metasurface. Our results open highly promising perspectives for integrated all-silicon-based plasmonic devices for instance for chemical or biological sensing or for thermal imaging.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Enhancement of electric and magnetic dipole transition of rare-earth doped thin films tailored by high-index dielectric nanostructures

We propose a simple experimental technique to separately map the emission from electric and magnetic dipole transitions close to single dielectric nanostructures, using a few nanometer thin film of rare-earth ion doped clusters. Rare-earth ions provide electric and magnetic dipole transitions of similar magnitude. By recording the photoluminescence from the deposited layer excited by a focused laser beam, we are able to simultaneously map the electric and magnetic emission enhancement on individual nanostructures. In spite of being a diffraction-limited far-field method with a spatial resolution of a few hundred nanometers, our approach appeals by its simplicity and high signal-to-noise ratio. We demonstrate our technique at the example of single silicon nanorods and dimers, in which we find a significant separation of electric and magnetic near-field contributions. Our method paves the way towards the efficient and rapid characterization of the electric and magnetic optical response of complex photonic nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Pushing the limits of optical information storage using deep learning

Diffraction drastically limits the bit density in optical data storage. To increase the storage density, alternative strategies involving supplementary recording dimensions and robust read-out schemes must be explored. Here, we propose to encode multiple bits of information in the geometry of subwavelength dielectric nanostructures. A crucial problem in high-density information storage concepts is the robustness of the information readout with respect to fabrication errors and experimental noise. Using a machine-learning based approach in which the scattering spectra are analyzed by an artificial neural network, we achieve quasi error free read-out of sequences of up to 9 bit, encoded in top-down fabricated silicon nanostructures. We demonstrate that probing few wavelengths instead of the entire spectrum is sufficient for robust information retrieval and that the readout can be further simplified, exploiting the RGB values from microscopy images. Our work paves the way towards high-density optical information storage using planar silicon nanostructures, compatible with mass-production ready CMOS technology.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Silicon dry oxidation kinetics at low temperature in the nanometric range: Modeling and experiment

Kinetics of silicon dry oxidation are investigated theoretically and experimentally at low temperature in the nanometer range where the limits of the Deal and Grove model becomes critical. Based on a fine control of the oxidation process conditions, experiments allow the investigation of the growth kinetics of nanometric oxide layer. The theoretical model is formulated using a reaction rate approach. In this framework, the oxide thickness is estimated with the evolution of the various species during the reaction. Standard oxidation models and the reaction rate approach are confronted with these experiments. The interest of the reaction rate approach to improve silicon oxidation modeling in the nanometer range is clearly demonstrated.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

A combination of capillary assembly and dielectrophoresis for wafer scale integration of carbon nanotubes-based electrical and mechanical devices

The wafer scale integration of carbon nanotubes (CNT) remains a challenge for electronic and electromechanical applications. We propose a novel CNT integration process relying on the combination of controlled capillary assembly and buried electrode dielectrophoresis (DEP). This process enables to monitor the precise spatial localization of a high density of CNTs and their alignment in a pre-defined direction. Large arrays of independent and low resistivity (4.4 x 10^-5 Ω.m) interconnections were achieved using this hybrid assembly with double-walled carbon nanotubes (DWNT). Finally, arrays of suspended individual CNT carpets have been realized and we demonstrate their potential use as functional nano-electromechanical systems (NEMS) by monitoring their resonance frequencies (ranging between 1.7 MHz to 10.5MHz) using a Fabry-Perot interferometer.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

A single layer hydrogen silsesquioxane (HSQ) based lift-off process for germanium and platinum

Primarily used as etch mask, single layer hydrogen silsesquioxane has never been investigated for lift-off technique. In this article, we propose a new technique where a single layer of hydrogen silsesquioxane, a negative tone electron beam resist, is used to make lift-off of germanium and platinum. Removal of exposed hydrogen silsesquioxane is tested for various concentrations of hydrofluoric acid. Ultrasonic agitation is also used to reduce the formation of flakes due to accumulation of matter (evaporated metal in our case) along the sidewalls of the lift-off narrow slots. Results demonstrate potential in applying the hydrogen silsesquioxane as a negative tone lift-off resist to pattern nanometer scale features into germanium and platinum layers.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width

The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for non-segregated contacts separated by micrometer-sized gaps. Still, an excess of current occurs at low temperature for short contact separations or dopant-segregated contacts when the voltage applied to the device is sufficiently high. From two-dimensional self-consistent non-equilibrium Green's function simulations, the dependence of the Schottky barrier profile on the applied voltage, unaccounted for in usual thermionic-field emission models, is found to be the source of this deviation.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowest value, at 450 C. By x-ray diffraction, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy, the decrease in the SBH is shown to be associated with the progressive formation of crystalline ErSi2-x.

0 citations0 reviewsNo code linkedOpen access