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Researcher profile

Jean-Pierre Raskin

Jean-Pierre Raskin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phcond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2022arXiv

Low-Power Silicon Strain Sensor Based on CMOS Current Reference Topology

A strain sensor inspired by a Widlar self-biased current source topology called $β$-multiplier is developed to obtain a strain-dependent reference current with high supply rejection. The sensor relies on the piezoresistive effect in the silicon MOS transistors that form the current reference circuit. The device behavior is analytically computed and verified with experimental measurements under four-point bending test. A basic implementation with an integrated resistor reaches a strain sensitivity of 2.54 nA/$με$ (gauge factor of 324) for a temperature sensitivity of 52.06 nA/°C. A more advanced full-transistor circuit based on current subtraction principle is furthered implemented in order to reach strain sensitivity up to 12.02 nA/$με$ (gauge factor of 1773) and temperature sensitivity of -28.72 nA/°C. This implementation includes a CMOS active load to tune the strain and temperature sensitivities with a total power consumption between 20 and 150 $μ$W.

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preprint2021arXiv

Indirect light absorption model for highly strained silicon infrared sensors

The optical properties of silicon can be greatly tuned by applying strain and opening new perspectives, particularly in applications where infrared is key. In this work, we use a recent model for the indirect light absorption of silicon and include the effects of tensile and compressive uniaxial strains. The model is based on material properties such as the bandgap, the conduction and valence band density-of-states effective masses, and the phonon frequencies, which are obtained from first principles including strain up to +2% along the [110] and [111] directions. We show that the limit of absorption can increase from 1.14 (1.09) to 1.35 $μ$m (0.92 eV) under 2% strain and that the absorption increases by a factor of 55 for the zero-strain cutoff wavelength of 1.14 $μ$m when a 2% compressive strain is applied in the [110] direction. We demonstrate that this effect is mainly due to the impact of strain on the electronic bandgaps of silicon, directly followed by the valence band density-of-states effective mass.

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preprint2019arXiv

Detection mechanism in highly sensitive ZnO nanowires network gas sensors

Metal-oxide nanowires are showing a great interest in the domain of gas sensing due to their large response even at a low temperature, enabling low-power gas sensors. However their response is still not fully understood, and mainly restricted to the linear response regime, which limits the design of appropriate sensors for specific applications. Here we analyse the non-linear response of a sensor based on ZnO nanowires network, both as a function of the device geometry and as a response to oxygen exposure. Using an appropriate model, we disentangle the contribution of the nanowire resistance and of the junctions between nanowires in the network. The applied model shows a very good consistency with the experimental data, allowing us to demonstrate that the response to oxygen at room temperature is dominated by the barrier potential at low bias voltage, and that the nanowire resistance starts to play a role at higher bias voltage. This analysis allows us to find the appropriate device geometry and working point in order to optimize the sensitivity. Such analysis is important for providing design rules, not only for sensing devices, but also for applications in electronics and opto-electronics using nanostructures networks with different materials and geometries.

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