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Source author record

Jean-Pierre Raskin

Jean-Pierre Raskin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.app-phcond-mat.otherquant-ph

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Published work

13 published item(s)

preprint2022arXiv

Low-Power Silicon Strain Sensor Based on CMOS Current Reference Topology

A strain sensor inspired by a Widlar self-biased current source topology called $β$-multiplier is developed to obtain a strain-dependent reference current with high supply rejection. The sensor relies on the piezoresistive effect in the silicon MOS transistors that form the current reference circuit. The device behavior is analytically computed and verified with experimental measurements under four-point bending test. A basic implementation with an integrated resistor reaches a strain sensitivity of 2.54 nA/$με$ (gauge factor of 324) for a temperature sensitivity of 52.06 nA/°C. A more advanced full-transistor circuit based on current subtraction principle is furthered implemented in order to reach strain sensitivity up to 12.02 nA/$με$ (gauge factor of 1773) and temperature sensitivity of -28.72 nA/°C. This implementation includes a CMOS active load to tune the strain and temperature sensitivities with a total power consumption between 20 and 150 $μ$W.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Indirect light absorption model for highly strained silicon infrared sensors

The optical properties of silicon can be greatly tuned by applying strain and opening new perspectives, particularly in applications where infrared is key. In this work, we use a recent model for the indirect light absorption of silicon and include the effects of tensile and compressive uniaxial strains. The model is based on material properties such as the bandgap, the conduction and valence band density-of-states effective masses, and the phonon frequencies, which are obtained from first principles including strain up to +2% along the [110] and [111] directions. We show that the limit of absorption can increase from 1.14 (1.09) to 1.35 $μ$m (0.92 eV) under 2% strain and that the absorption increases by a factor of 55 for the zero-strain cutoff wavelength of 1.14 $μ$m when a 2% compressive strain is applied in the [110] direction. We demonstrate that this effect is mainly due to the impact of strain on the electronic bandgaps of silicon, directly followed by the valence band density-of-states effective mass.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Detection mechanism in highly sensitive ZnO nanowires network gas sensors

Metal-oxide nanowires are showing a great interest in the domain of gas sensing due to their large response even at a low temperature, enabling low-power gas sensors. However their response is still not fully understood, and mainly restricted to the linear response regime, which limits the design of appropriate sensors for specific applications. Here we analyse the non-linear response of a sensor based on ZnO nanowires network, both as a function of the device geometry and as a response to oxygen exposure. Using an appropriate model, we disentangle the contribution of the nanowire resistance and of the junctions between nanowires in the network. The applied model shows a very good consistency with the experimental data, allowing us to demonstrate that the response to oxygen at room temperature is dominated by the barrier potential at low bias voltage, and that the nanowire resistance starts to play a role at higher bias voltage. This analysis allows us to find the appropriate device geometry and working point in order to optimize the sensitivity. Such analysis is important for providing design rules, not only for sensing devices, but also for applications in electronics and opto-electronics using nanostructures networks with different materials and geometries.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Using top graphene layer as sacrificial protection during dielectric atomic layer deposition

We investigate the structural damage of graphene underlying dielectrics (HfO2 and Al2O3) by remote plasma-enhanced atomic layer deposition (PE-ALD). Dielectric film is grown on bilayer graphene without inducing significant damage to the bottom graphene layer. Based on Raman spectra, we demonstrate that the bottom graphene layer has the salient features of single layer graphene. During the initial half-cycle PE-ALD, the upper graphene layer reacts with the metal precursor, forming uniform nucleation islands or an active metallic carbide layer. After monolayer dielectric coverage, the bottom graphene layer has additional protection. The upper graphene layer serves as a sacrificial layer, which not only promotes the adhesion of dielectric on graphene, but also protects the lattice symmetry of the bottom graphene layer. Our results indicate that bilayer graphene allows for controlling/limiting the degree of defect during the ALD of dielectrics and could be a good starting material for building filed effect transistors and sensing devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Self-Formation of Sub-10-nm Nanogaps by Silicidation for Resistive Switch in Air

We developed a simple and reliable method for the fabrication of sub-10-nm wide nanogaps. The self-formed nanogap is based on the stoichiometric solid-state reaction between metal and Si atoms during silicidation process. The nanogap width is deter- mined by the metal layer thickness. Our proposed method produces nanogaps either symmetric or asymmetric electrodes, as well as, multiple nanogaps within one unique process step for application to complex circuits. Therefore, this method provides high throughput and it is suitable for large-scale production. To demonstrate the feasibil- ity of the proposed fabrication method, nanogap resistive switches have been built and characterized. They exhibit a pronounced hysteresis with up to 103 on/off conductance ratios in air. Our results indicate that the voltages for initially electroforming the de- vice to the switch state are determinated by the nanogap sizes. However, the set and reset voltages of the device do not strongly dependent on the nanogap widths. These phenomena could be helpful to understand how the resistive switching is established.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Anisotropic Vapor HF etching of silicon dioxide for Si microstructure release

Damages are created in a sacrificial layer of silicon dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch rate ratio between implanted and unimplanted silicon dioxide is more than 150 in vapor hydrofluoric acid (VHF). This feature is of interest to greatly reduce the underetch of microelectromechanical systems anchors. Based on the experimentally extracted etch rate of unimplanted and implanted silicon dioxide, the patterning of the sacrificial layer can be predicted by simulation.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Direct growth of graphitic carbon on Si(111)

Appropriate conditions for direct growth of graphitic films on Si(111) 7$\times$7 are investigated. The structural and electronic properties of the samples are studied by Auger Electron Spectroscopy (AES), X-ray Photoemission Spectroscopy (XPS), Low Energy Electron Diffraction (LEED), Raman spectroscopy and Scanning Tunneling Microscopy (STM). In particular, we present STM images of a carbon honeycomb lattice grown directly on Si(111). Our results demonstrate that the quality of graphene films formed depends not only on the substrate temperature but also on the carbon buffer layer at the interface. This method might be very promising for graphene-based electronics and its integration into the silicon technology.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

A single layer hydrogen silsesquioxane (HSQ) based lift-off process for germanium and platinum

Primarily used as etch mask, single layer hydrogen silsesquioxane has never been investigated for lift-off technique. In this article, we propose a new technique where a single layer of hydrogen silsesquioxane, a negative tone electron beam resist, is used to make lift-off of germanium and platinum. Removal of exposed hydrogen silsesquioxane is tested for various concentrations of hydrofluoric acid. Ultrasonic agitation is also used to reduce the formation of flakes due to accumulation of matter (evaporated metal in our case) along the sidewalls of the lift-off narrow slots. Results demonstrate potential in applying the hydrogen silsesquioxane as a negative tone lift-off resist to pattern nanometer scale features into germanium and platinum layers.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimension and position of each floating gate are well defined and controlled. The devices exhibit a long retention time and single-electron injection at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Erbium Silicide Growth in the Presence of Residual Oxygen

The chemical changes of Ti/Er/n-Si(100) stacks evaporated in high vacuum and grown ex situ by rapid thermal annealing were scrutinized. The emphasis was laid on the evolution with the annealing temperature of (i) the Er-Si solid-state reaction and (ii) the penetration of oxygen into Ti and its subsequent interaction with Er. For that sake, three categories of specimens were analyzed: as-deposited, annealed at 300°C, and annealed at 600°C. It was found that the presence of residual oxygen into the annealing atmosphere resulted in a substantial oxidation of the Er film surface, irrespective of the annealing temperature. However, the part of the Er film in intimate contact with the Si bulk formed a silicide (amorphous at 300°C and crystalline at 600°C) invariably free of oxygen, as testified by x-ray photoelectron spectroscopy depth profiling and Schottky barrier height extraction of 0.3 eV at 600°C. This proves that, even if Er is highly sensitive to oxygen contamination, the formation of low Schottky barrier Er silicide contacts on n-Si is quite robust. Finally, the production of stripped oxygen-free Er silicide was demonstrated after process optimization.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width

The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for non-segregated contacts separated by micrometer-sized gaps. Still, an excess of current occurs at low temperature for short contact separations or dopant-segregated contacts when the voltage applied to the device is sufficiently high. From two-dimensional self-consistent non-equilibrium Green's function simulations, the dependence of the Schottky barrier profile on the applied voltage, unaccounted for in usual thermionic-field emission models, is found to be the source of this deviation.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowest value, at 450 C. By x-ray diffraction, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy, the decrease in the SBH is shown to be associated with the progressive formation of crystalline ErSi2-x.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2-x formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at the ErSi2-x/Si interface. On the other hand, if the implanted dose is slightly enhanced, the annealing temperature required to reach sub-0.12-eV effective SBH can be further reduced. This process enables the formation of very low effective SBH ErSi2-x/n-Si contacts with a low thermal budget.

0 citations0 reviewsNo code linkedOpen access