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Researcher profile

Gordon A. Keeler

Gordon A. Keeler contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.opticscond-mat.mes-hall

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Published work

4 published item(s)

preprint2016arXiv

Broken symmetry dielectric resonators for high quality-factor Fano metasurfaces

We present a new approach to dielectric metasurface design that relies on a single resonator per unit cell and produces robust, high quality-factor Fano resonances. Our approach utilizes symmetry breaking of highly symmetric resonator geoemetries, such as cubes, to induce couplings between the otherwise orthogonal resonator modes. In particular, we design perturbations that couple "bright" dipole modes to "dark" dipole modes whose radiative decay is suppressed by local field effects in the array. Our approach is widely scalable from the near-infrared to radio frequencies. We first unravel the Fano resonance behavior through numerical simulations of a germanium resonator-based metasurface that achieved a quality-factor of ~1300 at ~10.8 um. Then, we present two experimental demonstrations operating in the near-infrared (~1 um): a silicon-based implementation that achieved a quality-factor of ~350; and a gallium arsenide-based structure that achieves a quality-factor of ~600 - the highest near-infrared quality-factor experimentally demonstrated to date with this kind of metasurfaces. Importantly, large electromagnetic field enhancements appear within the resonators at the Fano resonant frequencies. We envision that combining high-quality factor, high field enhancement resonances with nonlinear and active/gain materials such as gallium arsenide will lead to new classes of active optical devices.

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preprint2016arXiv

III-V semiconductor nano-resonators-a new strategy for passive, active, and nonlinear all-dielectric metamaterials

Metamaterials comprising assemblies of dielectric resonators have attracted much attention due to their low intrinsic loss and isotropic optical response. In particular, metasurfaces made from silicon dielectric resonators have shown desirable behaviors such as efficient nonlinear optical conversion, spectral filtering and advanced wave-front engineering. To further explore the potential of dielectric metamaterials, we present all-dielectric metamaterials fabricated from epitaxially grown III-V semiconductors that can exploit the high second-order optical susceptibilities of III-V semiconductors, as well as the ease of monolithically integrating active/gain media. Specifically, we create GaAs nano-resonators using a selective wet oxidation process that forms a low refractive index AlGaO (n~1.6) under layer similar to silicon dielectric resonators formed using silicon-on-insulator wafers. We further use the same fabrication processes to demonstrate multilayer III-V dielectric resonator arrays that provide us with new degrees of freedom in device engineering. For these arrays, we experimentally measure ~100% reflectivity over a broad spectral range. We envision that all-dielectric III-V semiconductor metamaterials will open up new avenues for passive, active and nonlinear all dielectric metamaterials

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preprint2016arXiv

Resonantly enhanced second-harmonic generation using III-V semiconductor all-dielectric metasurfaces

Nonlinear optical phenomena in nanostructured materials have been challenging our perceptions of nonlinear optical processes that have been explored since the invention of lasers. For example, the ability to control optical field confinement, enhancement, and scattering almost independently, allows nonlinear frequency conversion efficiencies to be enhanced by many orders of magnitude compared to bulk materials. Also, the subwavelength length scale renders phase matching issues irrelevant. Compared with plasmonic nanostructures, dielectric resonator metamaterials show great promise for enhanced nonlinear optical processes due to their larger mode volumes. Here, we present, for the first time, resonantly enhanced second-harmonic generation (SHG) using Gallium Arsenide (GaAs) based dielectric metasurfaces. Using arrays of cylindrical resonators we observe SHG enhancement factors as large as 104 relative to unpatterned GaAs. At the magnetic dipole resonance we measure an absolute nonlinear conversion efficiency of ~2X10^(-5) with ~3.4 GW/cm2 pump intensity. The polarization properties of the SHG reveal that both bulk and surface nonlinearities play important roles in the observed nonlinear process.

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preprint2015arXiv

Enhanced third harmonic generation from the epsilon-near-zero modes of ultrathin films

We experimentally demonstrate efficient third harmonic generation from an indium tin oxide (ITO) nanofilm (lambda/42 thick) on a glass substrate for a pump wavelength of 1.4 um. A conversion efficiency of 3.3x10^-6 is achieved by exploiting the field enhancement properties of the epsilon-near-zero (ENZ) mode with an enhancement factor of 200. This nanoscale frequency conversion method is applicable to other plasmonic materials and reststrahlen materials in proximity of the longitudinal optical phonon frequencies.

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