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P. S. Anil Kumar

P. S. Anil Kumar appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.str-elcond-mat.mtrl-scicond-mat

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Published work

10 published item(s)

preprint2022arXiv

Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids

We present spin transport studies on a low-field, room-temperature magnetoelectric multiferroic polycrystalline $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}$ (SCFO)|Pt heterostructure wherein a highly tunable transverse conical magnetic phase is responsible for static and dynamic magnetoelectric coupling. We measured angular dependence of spin Hall magnetoresistance (SMR) at constant magnetic fields ($H$) in the range of 50 to 100 kOe. Application of field below the critical value (2.5 kOe), yielded negative SMR and the $H$-evolution of normalized SMR exhibited a negative gradient. Further, an increase in the $H$ resulted in the positive slope of normalized SMR Vs. $H$ and later at higher $H$ around 14 kOe, a crossover from negative to positive SMR was observed. We employed a simple model for estimating the equilibrium magnetic configuration and computed the SMR modulation at various values of $H$. We argue that the tilting of the cone is dominant and in turn responsible for the observed nature of SMR below 2.5 kOe while, the closing of the cone-angle is pronounced at higher fields causing a reversal in sign of the SMR from negative to positive. Importantly, SMR experiments revealed that a change in the helicity with a reversal of the magnetic field has no influence on the observed SMR. Longitudinal spin Seebeck effect (LSSE) signal was measured to be 500 nV at 280 K, under application of thermal gradient, $ΔT = 23$ K and field, 60 kOe. The observed LSSE signal, originating from pure magnon spin current, showed a similar $H$-dependent behavior as that of the magnetization of SCFO. Our detailed spin transport studies on polycrystalline SCFO|Pt heterostructure demonstrate high tunability of the amplitude and the sign of the SMR, highlighting its potential for novel spintronic devices such as SMR-based spin valves and voltage-controlled spin transport devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

$π$ phase difference between Hall oscillation and SdH oscillation and non trivial Berry Phase in a topological insulator

The quantum oscillation is an important probe for the detection of a topological insulator(TI) surface states by means of electrical transport since the Shubnikov-de Haas oscillations allow to extract the Berry Phase which is the key test to detect the topological surface states. Here we have extracted the non trivial Berry Phase of 1$\%$ Sn doped strong TI $Sb_2Te_2Se$. We observed oscillation in Hall resistance as well and showed that this does not arise neither from the dominance of the SdH on Hall data nor this is the precursor of quantum Hall effect, rather this happens due to the pinning of the Fermi Level. Also The Hall oscillation has exactly 180$^\circ$ phase difference from SdH oscillation and this phase shift is independent of the magnetic field strength. It is argued that this unusual phenomenon stems from the predominance of the intra Landau Level scattering over the inter Landau Level scattering and it depends on the strength of the scattering potential. Thus our work paves the way of understanding the physics of scattering via quantum oscillations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Effect of microstructure on the electronic transport properties of epitaxial CaRuO$_3$ thin films

We have carried out extensive comparative studies of the structural and transport properties of CaRuO$_3$ thin films grown under various oxygen pressure. We find that the preferred orientation and surface roughness of the films are strongly affected by the oxygen partial pressure during growth. This in turn affects the electrical and magnetic properties of the films. Films grown under high oxygen pressure have the least surface roughness and show transport characteristics of a good metal down to the lowest temperature measured. On the other hand, films grown under low oxygen pressures have high degree of surface roughness and show signatures of ferromagnetism. We could verify that the low frequency resistance fluctuations (noise) in these films arise due to thermally activated fluctuations of local defects and that the defect density matches with the level of disorder seen in the films through structural characterizations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Resolution of spin Hall and anisotropic magnetoresistance in Pt/EuO$_{1-x}$

We report on the angular and field dependence of the magnetoresistance (MR) in bilayers of Pt/EuO_{1-x} thin films, measured in both in-plane and out-of-plane geometries at different temperatures (T). Presence of oxygen vacancies manifested by a metal-insulator transition as well as a high-T ferromagnet to paramagnet transition (T_P) were observed in the bilayers. The Anisotropic Magnetoresistance (AMR) could be extracted in the entire T-range, even above T_P, exhibiting two sign crossovers. We attribute its T-evolution to the rotation of easy axis direction from a high-T out-of-plane to a low-T in-plane orientation. In addition, considering MR contributions from the films' (111) texture and interface, we identify a T-window wherein the spin Hall effect induced spin Hall magnetoresistance (SMR) could be extracted.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Role of spin mixing conductance in determining thermal spin pumping near the ferromagnetic phase transition in EuO_{1-x} and La2NiMnO6

We present a comprehensive study of the temperature (T) dependence of the longitudinal spin Seebeck effect (LSSE) in Pt/EuO_{1-x} and Pt/La2NiMnO6 (LNMO) hybrid structures across their Curie temperatures (Tc). Both systems host ferromagnetic interaction below Tc, hence present optimal conditions for testing magnon spin current based theories against ferrimagnetic YIG. Notably, we observe an anomalous Nernst effect (ANE) generated voltage in bare EuO_{1-x}, however, we find LSSE predominates the thermal signals in the bilayers with Pt. The T-dependence of the LSSE in small T-range near Tc could be fitted to a power law of the form (Tc-T)^P. The derived critical exponent, P, was verified for different methods of LSSE representation and sample crystallinity. The results are explained based on the magnon-driven thermal spin pumping mechanism that relate the T-dependence of LSSE to the spin mixing conductance (Gmix) at the heavy metal/ferromagnet (HM/FM) interface, which in turn is known to vary in accordance with the square of the spontaneous magnetization (Ms). Additionally, the T-dependence of the real part of Gmix derived from spin Hall magnetoresistance measurements at different temperatures for the Pt/LNMO structure, further establish the interdependence.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Metallic monoclinic phase in VO$_2$ induced by electrochemical gating: in-situ Raman study

We report in-situ Raman scattering studies of electrochemically top gated VO$_2$ thin film to address metal-insulator transition (MIT) under gating. The room temperature monoclinic insulating phase goes to metallic state at a gate voltage of 2.6 V. However, the number of Raman modes do not change with electrolyte gating showing that the metallic phase is still monoclinic. The high frequency Raman mode A$_g$(7) near 616 cm$^{-1}$ ascribed to V-O vibration of bond length 2.06 Å~ in VO$_6$ octahedra hardens with increasing gate voltage and the B$_g$(3) mode near 654 cm$^{-1}$ softens. This shows that the distortion of the VO$_6$ octahedra in the monoclinic phase decreases with gating. The time dependent Raman data at fixed gate voltages of 1 V (for 50 minute, showing enhancement of conductivity by a factor of 50) and 2 V (for 130 minute, showing further increase in conductivity by a factor of 5) show similar changes in high frequency Raman modes A$_g$(7) and B$_g$(3) as observed in gating. This slow change in conductance together with Raman frequency changes show that the governing mechanism for metalization is more likely to the diffusion controlled oxygen vacancy formation due to the applied electric field.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Controlling structural distortion in the geometrically frustrated layered cobaltate YBaCo4O7+δ by Fe substitution and its role on magnetic correlations

Effects of Fe-substitution on the crystal structure and magnetic correlations of the geometrically frustrated antiferromagnets YBaCo4-xFexO7+δ (x = 0, 0.2, 0.4, 0.5, 0.6, and 0.8) have been studied by neutron diffraction, Mössbauer spectroscopy, and ac susceptibility. The compounds YBaCo4-xFexO7+δ have a special layered-type crystal structure with an alternating Kagomé (6c site) and triangular (2a site) layers along the c axis. Fe3+ ions are found to be substituted at both the crystallographic 2a and 6c sites of Co ions. Mössbauer results show a high spin state of Fe3+ ions in a tetrahedral coordination. A reduction in the distortion of the Kagomé lattice has been observed with the Fe-substitution. The correlation length of the short-range antiferromagnetic ordering decreases with the Fe-substitution. The sharpness of the magnetic transition also decreases with the Fe-substitution.

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preprint2014arXiv

Probing a spin-glass state in SrRuO3 thin films through higher-order statistics of resistance fluctuations

The complex perovskite oxide SrRuO3 shows intriguing transport properties at low temperatures due to the interplay of spin, charge, and orbital degrees of freedom. One of the open questions in this system is regarding the origin and nature of the low-temperature glassy state. In this paper we report on measurements of higher-order statistics of resistance fluctuations performed in epitaxial thin films of SrRuO3 to probe this issue. We observe large low-frequency non-Gaussian resistance fluctuations over a certain temperature range. Our observations are compatible with that of a spin-glass system with properties described by hierarchical dynamics rather than with that of a simple ferromagnet with a large coercivity.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Influence of lattice distortion on the Curie temperature and spin-phonon coupling in LaMn$_{0.5}$Co$_{0.5}$O$_{3}$

Two distinct ferromagnetic phases of LaMn$_{0.5}$Co$_{0.5}$O$_{3}$ having monoclinic structure with distinct physical properties have been studied. The ferromagnetic ordering temperature $\textit{T}_{c}$ is found to be different for both the phases. The origin of such contrasting characteristics is assigned to the changes in the distance(s) and angle(s) between Mn - O - Co resulting from distortions observed from neutron diffraction studies. Investigations on the temperature dependent Raman spectroscopy provide evidence for such structural characteristics, which affects the exchange interaction. The difference in B-site ordering which is evident from the neutron diffraction is also responsible for the difference in $\textit{T}_{c}$. Raman scattering suggests the presence of spin-phonon coupling for both the phases around the $\textit{T}_{c}$. Electrical transport properties of both the phases have been investigated based on the lattice distortion.

0 citations0 reviewsNo code linkedOpen access
preprint2001arXiv

Temperature Dependence of Magneto Current in Spin Valve Transistor: A phenomenological Study

The temperature dependence of magneto current in the spin spin valve transistor system is theoretically explored based on phenomenological model. We find that the collector current strongly depends on the relative orientation of magnetic moment of ferromagnetic metals due to spin mixing effect. For example, the collector current is decreasing in the parallel case with increasing temperature, and it is increasing in anti-parallel configuration. We then obtain decreasing magneto current with increasing temperature. The result accords with the experimental data in qualitative manner. This phenomenological model calculations suggest that spin mixing effect may play an important role in the spin valve transistor system at finite temperature.

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