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Godfrey Gumbs

Godfrey Gumbs contributes to research discovery and scholarly infrastructure.

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Published work

12 published item(s)

preprint2022arXiv

Finite-temperature plasmons, damping and collective behavior for $α-\mathcal{T}_3$ model

We have conducted a thorough theoretical and numerical investigation of the electronic susceptibility, polarizability, plasmons, their damping rates, as well as the static screening in pseudospin-1 Dirac cone materials with a flat band, or for a general $α- \mathcal{T}_3$ model, at finite temperatures. This includes calculating the polarization function, plasmon dispersions and their damping rates at arbitrary temperatures and obtaining analytical approximations the long wavelength limit, low and high temperatures. We demonstrate that the integral transformation of the polarization function cannot be used directly for a dice lattice revealing some fundamental properties and important applicability limits of the flat band dispersions model. At $k_B T \ll E_F$, the largest temperature-induced change of the polarization function and plasmons comes from the mismatch between the chemical potential and the Fermi energy. We have also obtained a series of closed-form semi-analytical expressions for the static limit of the polarization function of an arbitrary $α- \mathcal{T}_3$ material at any temperature with exact analytical formulas for the high, low and zero temperature limits which is of tremendous importance for all types of transport and screening calculations for the flat band Dirac materials.

preprint2022arXiv

Floquet engineering of titled and gapped Dirac materials

We have established a rigorous theoretical formalism for Floquet engineering, or investigating and eventually tailoring most crucial electronic properties of tetragonal molybdenum disulfide (1T$^\prime$-MoS$_2$), by applying an external high-frequency dressing field in the off-resonant regime. It was recently demonstrated that monolayer semiconducting1T$^\prime$-MoS$_2$ may assume a distorted tetragonal structure which exhibits tunable and gapped spin- and valley-polarized tilted Dirac bandstructure. From the viewpoint of electronics, 1T$^\prime$-MoS$_2$ is one of the most technologically promising nanomaterials and a novel representative of an already famous family of transition metal dichalcogenides. The obtained dressed states strongly depend on the polarization of the applied irradiation and reflect the full complexity of the initial low-energy Hamiltonian of non-irradiated material. We have calculated and analyzed the obtained electron dressed states for linear and circular types of the polarization of the applied field focusing on their symmetrical properties, anisotropy, tilting and bandgaps, as well as topological signatures. Since a circularly polarized dressing field is also known to induce a transition into a new state with broken time-reversal symmetry and a non-zero Chern number, the combination of these topologically non-trivial phases and transitions between them could reveal some truly unique and earlier unknown phenomena.

preprint2022arXiv

Generalized Peierls substitution for the tight-binding model of twisted multilayer graphene in a magnetic field

We propose a generalized Peierls substitution method in conjunction with the tight-binding model to explore the magnetic quantization and quantum Hall effect in twisted multilayer graphene under a magnetic field. The Bloch-basis tight-binding Hamiltonian is constructed for large twist angle while a simplified tight-binding model is employed for the magic angle. We investigate extensively the band structures, Landau levels (LLs), and quantum Hall conductivity (QHC) of twisted bilayer graphene and twisted double bilayer graphene, as well as their dependence on the twist angle. Comparison between these crucial properties of monolayer graphene, Bernal bilayer graphene, and the twisted systems is carefully made to highlight the roles played by twisting. The unique selection rules of inter-LL transition, which is crucial for achieving a deep understanding of the step structures of QHC, are identified through the properties of LL wave functions. Our theoretical model opens up an opportunity for comprehension of the interplay between an applied magnetic field and the twisting effect associated with multilayer graphene.

preprint2022arXiv

Polarizability, plasmons, and screening in 1T${^\prime}$-MoS$_2$ with tilted Dirac bands

In the presence of an external vertical electric field and strain, it is evident that 1T${^\prime}$-MoS$_2$ exhibits tilted Dirac bands which are valley-spin-polarized. Additionally, this material experiences a topological phase change between a topological insulator and band insulator for a critical value of the electric field. Using linear response theory, we calculated the polarization function which is in turn employed to obtain the dielectric function. This latter quantity is subsequently utilized in calculations to determine the plasmons dispersion relation, their decay rate and impurity screening corresponding to various levels of doping, the critical applied vertical electric field strengths and the spin-orbit coupling gap in 1T${^\prime}$-MoS$_2$ with tilted Dirac bands.

preprint2022arXiv

Rashba spin-orbit coupling and quantum-interference effect for a pair of spin-correlated electrons in their tunneling and reflection under a step potential

We present both theory and numerical-computation results for the transmission and reflection probability currents of a charged particle across a potential step in the presence of a Rashba spin-orbit interaction. By varying kinetic energy and angle of incident electrons or barrier height, different features associated with tunneling and reflection of electrons are revealed by inter-spin-channel electron tunnelings and reflections. These unique properties are further accompanied by spin-state quantum interference of either a reflected or transmitted pairs of spin-correlated electrons with the same kinetic energy but in different spin-orbital states. Such distinctive features are expected to give rise to a lot of applications in both spintronics and quantum-computation devices.

preprint2020arXiv

Anomalous Klein paradox due to misalignment of optically-tunable elliptical dispersion for Dirac-cone dressed states and direction of incoming particles

After having derived boundary conditions for dressed-state electrons in a dice lattice, we investigate the electron tunneling through a square electrostatic potential barrier in both dice lattices and graphene under a linearly-polarized off-resonance and high-frequency dressing field, and demonstrate the anomalous Klein paradox for a nonzero incident angle, resulted from the misalignment of optically-controllable elliptical dispersion for Dirac-cone dressed states and the direction of incoming kinetic particles in our system. This finite incident angle is found depending on the type of light polarization, the light-induced anisotropy in energy dispersion and the strength of electron-light coupling. Meanwhile, we also observe much larger off-peak transmission amplitudes in dice lattices in comparison with graphene. We expect the theoretical results in this paper could be used for wide range of Dirac materials and applied to controlling both coherent tunneling and ballistic transport of electrons for constructing novel optical and electronic nano-scale switching devices.

preprint2020arXiv

Effect of magnetic field and chemical potential on the RKKY interaction in the $α$-${\cal T}_3$ lattice

The interaction energy for the indirect-exchange or Ruderman-Kittel-Kasuva-Yosida (RKKY) interaction between magnetic spins localized on lattice sites of the $α$-${\cal T}_3$ model is calculated using linear response theory. In this model, the $\texttt{AB}$-honeycomb lattice structure is supplemented with $\texttt{C}$ atoms at the centers of the hexagonal lattice. This introduces a parameter $α$ for the ratio of the hopping integral from hub-to-rim and that around the rim of the hexagonal lattice. A valley and $α$-dependent retarded Greens function matrix is used to form the susceptibility. Analytic and numerical results are obtained for undoped $α$-${\cal T}_3$, when the chemical potential is finite and also in the presence of an applied magnetic field. We demonstrate the anisotropy of these results when the magnetic impurities are placed on the $\texttt{A,B}$ and $\texttt{C}$ sublattice sites. Additionally, comparison of the behavior of the susceptibility of $α$-${\cal T}_3$ with graphene shows that there is a phase transition at $α=0$.

preprint2020arXiv

Fundamental Properties of Metal-Adsorbed Silicene: A DFT Study

Sodium, magnesium and aluminum adatoms, which, respectively, possess one, two and three valence electrons in terms of 3s, $3s^2$, and ($3s^2$, 3p) orbitals, are very suitable for helping us understand the adsorption-induced diverse phenomena. In this study, the revealing properties of metal (Na/Mg/Al)-adsorbed graphene systems are investigated by mean of the first-principles method. The single- and double-side chemisorption cases, the various adatom concentrations, the hollow/top/valley/bridge sites, and the buckled structures are taken into account. The hollow and valley adsorptions, which, respectively, correspond to the Na/Mg and Al cases, create the extremely non-uniform environments within the Moire superlattices. This lead to diverse orbital hybridizations in Na/Mg/Al-Si bonds, as indicated from the Na/Mg/Al-dominated bands, the spatial charge density distributions and the orbital-projected density of states (DOS). Among three kinds of metal-adatom adsorptions, the Al-adsorption configurations present the strongest chemical modifications. The ferromagnetic configurations are shown to only survive in the specific Mg- and Al-adsorptions, but not the Na-cases. The theoretical predictions could be validated by experimental measurements and the up-to-date potential applications are included. Furthermore, the important similarities and differences with the graphene-related systems are also discussed.

preprint2020arXiv

Lattice thermal conductivity of pristine and doped (B,N) Graphene

In this paper, the effect of B and N doping on the phonon induced thermal conductivity of graphene has been investigated. This study is important when one has to evaluate the usefulness of electronic properties of B and N doped graphene. We have performed the calculations by employing density functional perturbation theory(DFPT) to calculate the inter-atomic forces=force constants of pristine/doped graphene. Thermal conductivity calculations have been carried out by making use of linearized Boltzmann transport equations (LBTE) under single-mode relaxation time approximation (RTA). The thermal conductivity of pristine graphene has been found to be of the order of 4000W/mK at 100K, which decreases gradually with an increase in temperature. The thermal conductivity decreases drastically by 96 % to 190 W/mK when doped with 12.5 % B and reduces by 99 % to 30 W/mK with 25 % B doping. When graphene is doped with N, the thermal conductivity decreases to 4 W/mK and 55 W/mK for 12.5 % and 25 % doping concentration, respectively. We have found that the thermal conductivity of doped graphene show less sensitivity to change in temperature. It has also been shown that the thermal conductivity of graphene can be tuned with doping and has a strong dependence on doping concentration.

preprint2020arXiv

Many-Body Effects and Optical Properties of Single- and Double Layer $α$-$\mathcal{T}_3$ Lattices

An extensive analytical and numerical investigation has been carried out to examine the role played by many-body effects on various $α$-$\mathcal{T}_3$ materials under an off-resonance optical dressing field. Additionally, we explore its dependence on the hopping parameter $α$ as well as the electron-light coupling strength $λ_0$. The obtained dressed states due to mutual interaction between Dirac electrons and incident light are shown to demonstrate rather different electronic and optical properties in comparison with those in the absence of incident light. Specifically, various collective transport and optical properties of these electron dressed states are discussed in detail and compared for both single- and double layer $α$-$\mathcal{T}_3$ lattices. All of these novel properties are due to the presence of a middle flat band and the interband transitions between it and an upper conduction band. Also, coupled plasmon dispersions for interacting double layer $α$-$\mathcal{T}_3$ lattices are calculated, revealing a lower acoustic-like plasmon branch with tunable group velocity determined by both the layer separation and Fermi energy of each layer. Finally, a many-body theory is presented within the random-phase approximation for calculating the optical absorbance of doped multi-layered $α$-$\mathcal{T}_3$ lattices in a linearly-polarized light field. We anticipate that the discoveries reported here could impact the design of the next-generation nano-optical and nano-plasmonic devices.

preprint2019arXiv

Nonlinear transport of ballistic Dirac electrons tunneling through a tunable potential barrier in graphene

Dirac-electronic tunneling and nonlinear transport properties with both finite and zero energy bandgap are investigated for graphene with a tilted potential barrier under a bias. For validation, results from a finite-difference based numerical approach, which is developed for calculating transmission and reflection coefficients with a dynamically-tunable (time-dependent bias field) barrier-potential profile, are compared with those of both an analytical model for a static square-potential barrier and a perturbation theory using Wentzel-Kramers-Brillouin (WKB) approximation. For a biased barrier, both transmission coefficient and tunneling resistance are computed and analyzed, indicating a full control of the peak in tunneling resistance by bias field for a tilted barrier, gate voltage for barrier height, and energy for incoming electrons. Moreover, a finite energy gap in graphene is found to suppress head-on transmission as well as skew transmission with a large transverse momentum. For a gapless graphene, on the other hand, filtering of Dirac electrons outside of normal incidence is found and can be used for designing electronic lenses. All these predicted attractive transport properties are expected extremely useful for the development of novel electronic and optical graphene-based devices.

preprint2019arXiv

Quantum-statistical theory for laser-tuned transport and optical conductivities of dressed electrons in $α-\mc{T}_3$ materials

In the presence of external off-resonance and circularly-polarized irradiation, we have derived a many-body formalism and performed a detailed numerical analysis for both the conduction and optical currents in $α-\mc{T}_3$ lattices. The calculated complex many-body dielectric function, as well as conductivities of displacement and transport currents, display strong dependence on the lattice-structure parameter $α$, especially approaching the graphene limit with $α\to 0$. Unique features in dispersion and damping of plasmon modes are observed with different $α$ values, which are further accompanied by a reduced transport conductivity under irradiation. The discovery in this paper can be used for designing novel multi-functional nanoelectronic and nanoplasmonic devices.