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Giovanni di Santo

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.other cond-mat.str-el

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preprint2022arXiv

Can the "shadow" of graphene band clarify its flatness?

Graphene band renormalization at the proximity of the van Hove singularity (VHS) has been investigated by angle-resolved photoemission spectroscopy (ARPES) on the Li-doped quasi-freestanding graphene on the cobalt (0001) surface. The absence of graphene band hybridization with the substrate, the doping contribution well represented by a rigid energy shift and the excellent electron-electron interaction screening ensured by the metallic substrate offer a privileged point of view for such investigation. A clear ARPES signal is detected along the M point of the graphene Brillouin zone, giving rise to an apparent flattened band. By simulating the graphene spectral function from the density functional theory calculated bands, we demonstrate that the photoemission signal along the M point originates from the "shadow" of the spectral function of the unoccupied band above the Fermi level. Such interpretation put forward the absence of any additional strong correlation effects at the VHS proximity, reconciling the mean field description of the graphene band structure even in the highly doped scenario.

preprint2022arXiv

Electronic band structure in pristine and Sulfur-doped Ta $_2$ NiSe $_5$

We present an angle-resolved photoemission study of the electronic band structure of the excitonic insulator Ta $_2$ NiSe $_5$ , as well as its evolution upon Sulfur doping. Our experimental data show that while the excitonic insulating phase is still preserved at a Sulfur-doping level of 25 $\%$ , such phase is heavily suppressed when there is a substantial amount, $\sim$ 50 $\%$ , of S-doping at liquid nitrogen temperatures. Moreover, our photon energy-dependent measurements reveal a clear three dimensionality of the electronic structure, both in Ta $_2$ NiSe $_5$ and Ta $_2$ Ni(Se $_{1-x}$ S $_x$ ) $_5$ ( $x=0.25, 0.50$ ) compounds. This suggests a reduction of electrical and thermal conductivities, which might make these compounds less suitable for electronic transport applications.

preprint2022arXiv

Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures

The electronic structure of low nanoscale (LNS) intrinsic silicon (i-Si) embedded in SiO2 vs. Si3N4 shifts away from vs. towards the vacuum level Evac, as described by the Nanoscale Electronic Structure Shift Induced by Anions at Surfaces (NESSIAS). Here, we fully explain the NESSIAS based on the quantum chemical properties of the elements involved. Deriving an analytic parameter Lambda to predict the highest occupied molecular orbital energy of Si nanocrystals (NCs), we use various hybrid-DFT methods and NC sizes to verify the accuracy of Lambda. We report on first experimental data of Si nanowells (NWells) embedded in SiO2 vs. Si3N4 by X-ray absorption spectroscopy in total fluorescence yield mode (XAS-TFY) which are complemented by ultraviolet photoelectron spectroscopy (UPS), characterizing their conduction band and valence band edge energies E_C and E_V, respectively. Scanning the valence band sub-structure by UPS over NWell thickness, we derive an accurate estimate of EV shifted purely by spatial confinement, and thus the actual E_V shift due to NESSIAS. For 1.9 nm thick NWells in SiO2 vs. Si3N4, we get offsets of Delta E_C = 0.56 eV and Delta E_V = 0.89 eV, demonstrating a type II homojunction in LNS i-Si. This p/n junction generated by the NESSIAS eliminates any deteriorating impact of impurity dopants, offering undoped ultrasmall Si electronic devices with much reduced physical gate lengths and CMOS-compatible materials.

preprint2020arXiv

Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal $α$ -Sn

In-plane compressively strained $α$ -Sn films have been theoretically predicted and experimentally proven to possess non-trivial electronic states of a 3D topological Dirac semimetal. The robustness of these states typically strongly depends on purity, homogeneity and stability of the grown material itself. By developing a reliable fabrication process, we were able to grow pure strained $α$ -Sn films on InSb(100), without heating of the substrate during growth, nor using any dopants. The $α$ -Sn films were grown by molecular beam epitaxy, followed by experimental verification of the achieved chemical purity and structural properties of the film's surface. Local insight into the surface morphology was provided by scanning tunneling microscopy. We detected the existence of compressive strain using Mössbauer spectroscopy and we observed a remarkable robustness of the grown samples against ambient conditions. The topological character of the samples was confirmed by angle-resolved photoemission spectroscopy, revealing the Dirac cone of the topological surface state. Scanning tunneling spectroscopy, moreover, allowed obtaining an improved insight into the electronic structure of the 3D topological Dirac semimetal $α$ -Sn above the Fermi level.

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Giovanni di Santo

Research overview

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4 publications

Can the "shadow" of graphene band clarify its flatness?

Electronic band structure in pristine and Sulfur-doped Ta $_2$ NiSe $_5$

Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures

Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal $α$ -Sn

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Giovanni di Santo

Research overview

Is this your work?

4 publications

Can the "shadow" of graphene band clarify its flatness?

Electronic band structure in pristine and Sulfur-doped Ta2_22​NiSe5_55​

Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures

Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal ααα-Sn

See the researcher in context

Building this map preview

Electronic band structure in pristine and Sulfur-doped Ta $_2$ NiSe $_5$

Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal $α$ -Sn