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Wenjuan Zhao

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.other cond-mat.str-el

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preprint2022arXiv

Can the "shadow" of graphene band clarify its flatness?

Graphene band renormalization at the proximity of the van Hove singularity (VHS) has been investigated by angle-resolved photoemission spectroscopy (ARPES) on the Li-doped quasi-freestanding graphene on the cobalt (0001) surface. The absence of graphene band hybridization with the substrate, the doping contribution well represented by a rigid energy shift and the excellent electron-electron interaction screening ensured by the metallic substrate offer a privileged point of view for such investigation. A clear ARPES signal is detected along the M point of the graphene Brillouin zone, giving rise to an apparent flattened band. By simulating the graphene spectral function from the density functional theory calculated bands, we demonstrate that the photoemission signal along the M point originates from the "shadow" of the spectral function of the unoccupied band above the Fermi level. Such interpretation put forward the absence of any additional strong correlation effects at the VHS proximity, reconciling the mean field description of the graphene band structure even in the highly doped scenario.

preprint2022arXiv

Electronic band structure in pristine and Sulfur-doped Ta$_2$NiSe$_5$

We present an angle-resolved photoemission study of the electronic band structure of the excitonic insulator Ta$_2$NiSe$_5$, as well as its evolution upon Sulfur doping. Our experimental data show that while the excitonic insulating phase is still preserved at a Sulfur-doping level of 25$\%$, such phase is heavily suppressed when there is a substantial amount, $\sim$ 50$\%$, of S-doping at liquid nitrogen temperatures. Moreover, our photon energy-dependent measurements reveal a clear three dimensionality of the electronic structure, both in Ta$_2$NiSe$_5$ and Ta$_2$Ni(Se$_{1-x}$S$_x$)$_5$ ($x=0.25, 0.50$) compounds. This suggests a reduction of electrical and thermal conductivities, which might make these compounds less suitable for electronic transport applications.

preprint2021arXiv

Spectroscopic Evidence on Realization of a Genuine Topological Nodal Line Semimetal in LaSbTe

The nodal line semimetals have attracted much attention due to their unique topological electronic structure and exotic physical properties. A genuine nodal line semimetal is qualified by the presence of Dirac nodes along a line in the momentum space that are protected against the spin-orbit coupling. In addition, it requires that the Dirac points lie close to the Fermi level allowing to dictate the macroscopic physical properties. Although the material realization of nodal line semimetals have been theoretically predicted in numerous compounds, only a few of them have been experimentally verified and the realization of a genuine nodal line semimetal is particularly rare. Here we report the realization of a genuine nodal line semimetal in LaSbTe. We investigated the electronic structure of LaSbTe by band structure calculations and angle-resolved photoemission (ARPES) measurements. Taking spin-orbit coupling into account, our band structure calculations predict that a nodal line is formed in the boundary surface of the Brillouin zone which is robust and lies close to the Fermi level. The Dirac nodes along the X-R line in momentum space are directly observed in our ARPES measurements and the energies of these Dirac nodes are all close to the Fermi level. These results constitute clear evidence that LaSbTe is a genuine nodal line semimetal,providing a new platform to explore for novel phenomena and possible applications associated with the nodal line semimetals.

preprint2020arXiv

Direct Measurement of the Electronic Structure and band gap nature of atomic-layer-thick 2H-MoTe2

The millimeter sized monolayer and bilayer 2H-MoTe2 single crystal samples are prepared by a new mechanical exfoliation method. Based on such high-quality samples, we report the first direct electronic structure study on them, using standard high resolution angle-resolved photoemission spectroscopy (ARPES). A direct band gap of 0.924eV is found at K in the rubidium-doped monolayer MoTe2. Similar valence band alignment is also observed in bilayer MoTe2,supporting an assumption of a analogous direct gap semiconductor on it. Our measurements indicate a rather large band splitting of 212meV at the valence band maximum (VBM) in monolayer MoTe2, and the splitting is systematically enlarged with layer stacking, from monolayer to bilayer and to bulk. Meanwhile, our PBE band calculation on these materials show excellent agreement with ARPES results. Some fundamental electronic parameters are derived from the experimental and calculated electronic structures. Our findings lay a foundation for further application-related study on monolayer and bilayer MoTe2.

preprint2016arXiv

Electronic Evidence for Type II Weyl Semimetal State in MoTe2

Topological quantum materials, including topological insulators and superconductors, Dirac semimetals and Weyl semimetals, have attracted much attention recently for their unique electronic structure, spin texture and physical properties. Very lately, a new type of Weyl semimetals has been proposed where the Weyl Fermions emerge at the boundary between electron and hole pockets in a new phase of matter, which is distinct from the standard type I Weyl semimetals with a point-like Fermi surface. The Weyl cone in this type II semimetals is strongly tilted and the related Fermi surface undergos a Lifshitz transition, giving rise to a new kind of chiral anomaly and other new physics. MoTe2 is proposed to be a candidate of a type II Weyl semimetal; the sensitivity of its topological state to lattice constants and correlation also makes it an ideal platform to explore possible topological phase transitions. By performing laser-based angle-resolved photoemission (ARPES) measurements with unprecedentedly high resolution, we have uncovered electronic evidence of type II semimetal state in MoTe2. We have established a full picture of the bulk electronic states and surface state for MoTe2 that are consistent with the band structure calculations. A single branch of surface state is identified that connects bulk hole pockets and bulk electron pockets. Detailed temperature-dependent ARPES measurements show high intensity spot-like features that is ~40 meV above the Fermi level and is close to the momentum space consistent with the theoretical expectation of the type II Weyl points. Our results constitute electronic evidence on the nature of the Weyl semimetal state that favors the presence of two sets of type II Weyl points in MoTe2.