Electronic band structure in pristine and Sulfur-doped TaNiSe
We present an angle-resolved photoemission study of the electronic band structure of the excitonic insulator TaNiSe, as well as its evolution upon Sulfur doping. Our experimental data show that while the excitonic insulating phase is still preserved at a Sulfur-doping level of 25, such phase is heavily suppressed when there is a substantial amount, 50, of S-doping at liquid nitrogen temperatures. Moreover, our photon energy-dependent measurements reveal a clear three dimensionality of the electronic structure, both in TaNiSe and TaNi(SeS) () compounds. This suggests a reduction of electrical and thermal conductivities, which might make these compounds less suitable for electronic transport applications.