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Researcher profile

Giordano Scappucci

Giordano Scappucci contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallquant-phComputer VisionEmerging TechnologiesMachine Learning

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Published work

10 published item(s)

preprint2026arXiv

Distributing entanglement between distant semiconductor qubit registers using a shared-control shuttling link

Semiconductor quantum processors have potential to scale to modular quantum computers, in which qubit registers are coupled by quantum links, enabling high connectivity and space for control circuitry. Individual spin-qubit registers have progressed to two-dimensional systems and execution of small quantum algorithms. Separately, high-fidelity spin shuttling has been demonstrated in linear channels defined by individual gate electrodes. Here, we realize the first shared-control shuttling link integrated between distant qubit registers to demonstrate quantum entanglement in a basic modular quantum processor based on hole spin qubits in germanium. We develop a protocol to compensate for spin-orbit-induced rotations during qubit transfer, allowing for shuttling between qubit registers separated by more than one micrometer in approximately a hundred nanoseconds. Combining local qubit operation with coherent shuttling, we generate Bell states formed by spins residing in separate registers. Characterizing them using quantum state tomography, we demonstrate entanglement between spin qubits in distant registers.

0 citations0 reviewsNo code linkedOpen access
preprint2026arXiv

Inferring charge-noise source locations from correlations in spin qubits

We investigate low-frequency noise in a spin-qubit device made in isotopically purified Si/Si-Ge. Observing sizable cross-correlations among energy fluctuations of different qubits, we conclude that these fluctuations are dominated by charge noise. At low frequencies, the noise spectra are not well described by a power law; instead, they reveal the presence of a few individual two-level fluctuators (TLFs). We demonstrate that the noise cross-correlations allow one to get information on the spatial location of such individual TLFs.

0 citations0 reviewsNo code linkedOpen access
preprint2025arXiv

Automated electrostatic characterization of quantum dot devices in single- and bilayer heterostructures

As quantum dot (QD)-based spin qubits advance toward larger, more complex device architectures, rapid, automated device characterization and data analysis tools become critical. The orientation and spacing of transition lines in a charge stability diagram (CSD) contain a fingerprint of a QD device's capacitive environment, making these measurements useful tools for device characterization. However, manually interpreting these features is time-consuming, error-prone, and impractical at scale. Here, we present an automated protocol for extracting underlying capacitive properties from CSDs. Our method integrates machine learning, image processing, and object detection to identify and track charge transitions across large datasets without manual labeling. We demonstrate this method using experimentally measured data from a strained-germanium single-quantum-well (planar) and a strained-germanium double-quantum-well (bilayer) QD device. Unlike for planar QD devices, CSDs in bilayer germanium heterostructure exhibit a larger set of transitions, including interlayer tunneling and distinct loading lines for the vertically stacked QDs, making them a powerful testbed for automation methods. By analyzing the properties of many CSDs, we can statistically estimate physically relevant quantities, like relative lever arms and capacitive couplings. Thus, our protocol enables rapid extraction of useful, nontrivial information about QD devices.

0 citations0 reviewsNo code linkedOpen access
preprint2025arXiv

Towards autonomous time-calibration of large quantum-dot devices: Detection, real-time feedback, and noise spectroscopy

The performance and scalability of semiconductor quantum-dot (QD) qubits are limited by electrostatic drift and charge noise that shift operating points and destabilize qubit parameters. As systems expand to large one- and two-dimensional arrays, manual recalibration becomes impractical, creating a need for autonomous stabilization frameworks. Here, we introduce a method that uses the full network of charge-transition lines in repeatedly acquired double-quantum-dot charge stability diagrams (CSDs) as a multidimensional probe of the local electrostatic environment. By accurately tracking the motion of selected transitions in time, we detect voltage drifts, identify abrupt charge reconfigurations, and apply compensating updates to maintain stable operating conditions. We demonstrate our approach on a 10-QD device, showing robust stabilization and real-time diagnostic access to dot-specific noise processes. The high acquisition rate of radio-frequency reflectometry CSD measurements also enables time-domain noise spectroscopy, allowing the extraction of noise power spectral densities, the identification of two-level fluctuators, and the analysis of spatial noise correlations across the array. From our analysis, we find that the background noise at 100~$μ$\si{\hertz} is dominated by drift with a power law of $1/f^2$, accompanied by a few dominant two-level fluctuators and an average linear correlation length of $(188 \pm 38)$~\si{\nano\meter} in the device. These capabilities form the basis of a scalable, autonomous calibration and characterization module for QD-based quantum processors, providing essential feedback for long-duration, high-fidelity qubit operations.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Single-electron occupation in quantum dot arrays at selectable plunger gate voltage

The small footprint of semiconductor qubits is favourable for scalable quantum computing. However, their size also makes them sensitive to their local environment and variations in gate structure. Currently, each device requires tailored gate voltages to confine a single charge per quantum dot, clearly challenging scalability. Here, we tune these gate voltages and equalize them solely through the temporary application of stress voltages. In a double quantum dot, we reach a stable (1,1) charge state at identical and predetermined plunger gate voltage and for various interdot couplings. Applying our findings, we tune a 2$\times$2 quadruple quantum dot such that the (1,1,1,1) charge state is reached when all plunger gates are set to 1 V. The ability to define required gate voltages may relax requirements on control electronics and operations for spin qubit devices, providing means to advance quantum hardware.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Coherent spin-spin coupling mediated by virtual microwave photons

We report the coherent coupling of two electron spins at a distance via virtual microwave photons. Each spin is trapped in a silicon double quantum dot at either end of a superconducting resonator, achieving spin-photon couplings up to around $g_s/2π= 40 \ \text{MHz}$. As the two spins are brought into resonance with each other, but detuned from the photons, an avoided crossing larger than the spin linewidths is observed with an exchange splitting around $2J/2π= 20 \ \text{MHz}$. In addition, photon-number states are resolved from the shift $2χ_s/2π= -13 \ \text{MHz}$ that they induce on the spin frequency. These observations demonstrate that we reach the strong dispersive regime of circuit quantum electrodynamics with spins. Achieving spin-spin coupling without real photons is essential to long-range two-qubit gates between spin qubits and scalable networks of spin qubits on a chip.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Shared control of a 16 semiconductor quantum dot crossbar array

The efficient control of a large number of qubits is one of most challenging aspects for practical quantum computing. Current approaches in solid-state quantum technology are based on brute-force methods, where each and every qubit requires at least one unique control line, an approach that will become unsustainable when scaling to the required millions of qubits. Here, inspired by random access architectures in classical electronics, we introduce the shared control of semiconductor quantum dots to efficiently operate a two-dimensional crossbar array in planar germanium. We tune the entire array, comprising 16 quantum dots, to the few-hole regime and, to isolate an unpaired spin per dot, we confine an odd number of holes in each site. Moving forward, we establish a method for the selective control of the quantum dots interdot coupling and achieve a tunnel coupling tunability over more than 10 GHz. The operation of a quantum electronic device with fewer control terminals than tunable experimental parameters represents a compelling step forward in the construction of scalable quantum technology.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Wafer-scale low-disorder 2DEG in $^{28}$Si/SiGe without an epitaxial Si cap

We grow $^{28}$Si/SiGe heterostructures by reduced-pressure chemical vapor deposition and terminate the stack without an epitaxial Si cap but with an amorphous Si-rich layer obtained by exposing the SiGe barrier to dichlorosilane at 500 °C. As a result, $^{28}$Si/SiGe heterostructure field-effect transistors feature a sharp semiconductor/dielectric interface and support a two-dimensional electron gas with enhanced and more uniform transport properties across a 100 mm wafer. At T = 1.7 K we measure a high mean mobility of (1.8$\pm$0.5)$\times$10$^5$ cm$^2$/Vs and a low mean percolation density of (9$\pm$1)$\times$10$^{10}$ cm$^{-2}$. From the analysis of Shubnikov-de Haas oscillations at T = 190 mK we obtain a long mean single particle relaxation time of (8.1$\pm$0.5) ps, corresponding to a mean quantum mobility and quantum level broadening of (7.5$\pm$0.6)$\times$10$^4$ cm$^{2}$/Vs and (40$\pm$3) $μ$eV, respectively, and a small mean Dingle ratio of (2.3$\pm$0.2), indicating reduced scattering from long range impurities and a low-disorder environment for hosting high-performance spin-qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Computing with spin qubits at the surface code error threshold

High-fidelity control of quantum bits is paramount for the reliable execution of quantum algorithms and for achieving fault-tolerance, the ability to correct errors faster than they occur. The central requirement for fault-tolerance is expressed in terms of an error threshold. Whereas the actual threshold depends on many details, a common target is the ~1% error threshold of the well-known surface code. Reaching two-qubit gate fidelities above 99% has been a long-standing major goal for semiconductor spin qubits. These qubits are well positioned for scaling as they can leverage advanced semiconductor technology. Here we report a spin-based quantum processor in silicon with single- and two-qubit gate fidelities all above 99.5%, extracted from gate set tomography. The average single-qubit gate fidelities remain above 99% when including crosstalk and idling errors on the neighboring qubit. Utilizing this high-fidelity gate set, we execute the demanding task of calculating molecular ground state energies using a variational quantum eigensolver algorithm. Now that the 99% barrier for the two-qubit gate fidelity has been surpassed, semiconductor qubits have gained credibility as a leading platform, not only for scaling but also for high-fidelity control.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Fast universal quantum control above the fault-tolerance threshold in silicon

Fault-tolerant quantum computers which can solve hard problems rely on quantum error correction. One of the most promising error correction codes is the surface code, which requires universal gate fidelities exceeding the error correction threshold of 99 per cent. Among many qubit platforms, only superconducting circuits, trapped ions, and nitrogen-vacancy centers in diamond have delivered those requirements. Electron spin qubits in silicon are particularly promising for a large-scale quantum computer due to their nanofabrication capability, but the two-qubit gate fidelity has been limited to 98 per cent due to the slow operation.Here we demonstrate a two-qubit gate fidelity of 99.5 per cent, along with single-qubit gate fidelities of 99.8 per cent, in silicon spin qubits by fast electrical control using a micromagnet-induced gradient field and a tunable two-qubit coupling. We identify the condition of qubit rotation speed and coupling strength where we robustly achieve high-fidelity gates. We realize Deutsch-Jozsa and Grover search algorithms with high success rates using our universal gate set. Our results demonstrate the universal gate fidelity beyond the fault-tolerance threshold and pave the way for scalable silicon quantum computers.

0 citations0 reviewsNo code linkedOpen access