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Lieven M. K. Vandersypen

Lieven M. K. Vandersypen appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-phcond-mat.mtrl-sciBiological Physicscond-mat.othercond-mat.supr-conphysics.app-ph

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Published work

32 published item(s)

preprint2026arXiv

Distributing entanglement between distant semiconductor qubit registers using a shared-control shuttling link

Semiconductor quantum processors have potential to scale to modular quantum computers, in which qubit registers are coupled by quantum links, enabling high connectivity and space for control circuitry. Individual spin-qubit registers have progressed to two-dimensional systems and execution of small quantum algorithms. Separately, high-fidelity spin shuttling has been demonstrated in linear channels defined by individual gate electrodes. Here, we realize the first shared-control shuttling link integrated between distant qubit registers to demonstrate quantum entanglement in a basic modular quantum processor based on hole spin qubits in germanium. We develop a protocol to compensate for spin-orbit-induced rotations during qubit transfer, allowing for shuttling between qubit registers separated by more than one micrometer in approximately a hundred nanoseconds. Combining local qubit operation with coherent shuttling, we generate Bell states formed by spins residing in separate registers. Characterizing them using quantum state tomography, we demonstrate entanglement between spin qubits in distant registers.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Single-electron occupation in quantum dot arrays at selectable plunger gate voltage

The small footprint of semiconductor qubits is favourable for scalable quantum computing. However, their size also makes them sensitive to their local environment and variations in gate structure. Currently, each device requires tailored gate voltages to confine a single charge per quantum dot, clearly challenging scalability. Here, we tune these gate voltages and equalize them solely through the temporary application of stress voltages. In a double quantum dot, we reach a stable (1,1) charge state at identical and predetermined plunger gate voltage and for various interdot couplings. Applying our findings, we tune a 2$\times$2 quadruple quantum dot such that the (1,1,1,1) charge state is reached when all plunger gates are set to 1 V. The ability to define required gate voltages may relax requirements on control electronics and operations for spin qubit devices, providing means to advance quantum hardware.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Coherent spin-spin coupling mediated by virtual microwave photons

We report the coherent coupling of two electron spins at a distance via virtual microwave photons. Each spin is trapped in a silicon double quantum dot at either end of a superconducting resonator, achieving spin-photon couplings up to around $g_s/2π= 40 \ \text{MHz}$. As the two spins are brought into resonance with each other, but detuned from the photons, an avoided crossing larger than the spin linewidths is observed with an exchange splitting around $2J/2π= 20 \ \text{MHz}$. In addition, photon-number states are resolved from the shift $2χ_s/2π= -13 \ \text{MHz}$ that they induce on the spin frequency. These observations demonstrate that we reach the strong dispersive regime of circuit quantum electrodynamics with spins. Achieving spin-spin coupling without real photons is essential to long-range two-qubit gates between spin qubits and scalable networks of spin qubits on a chip.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Long-range electron-electron interactions in quantum dot systems and applications in quantum chemistry

Long-range interactions play a key role in several phenomena of quantum physics and chemistry. To study these phenomena, analog quantum simulators provide an appealing alternative to classical numerical methods. Gate-defined quantum dots have been established as a platform for quantum simulation, but for those experiments the effect of long-range interactions between the electrons did not play a crucial role. Here we present the first detailed experimental characterization of long-range electron-electron interactions in an array of gate-defined semiconductor quantum dots. We demonstrate significant interaction strength among electrons that are separated by up to four sites, and show that our theoretical prediction of the screening effects matches well the experimental results. Based on these findings, we investigate how long-range interactions in quantum-dot arrays may be utilized for analog simulations of artificial quantum matter. We numerically show that about ten quantum dots are sufficient to observe binding for a one-dimensional $H_2$-like molecule. These combined experimental and theoretical results pave the way for future quantum simulations with quantum dot arrays and benchmarks of numerical methods in quantum chemistry.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Spiderweb array: A sparse spin-qubit array

One of the main bottlenecks in the pursuit of a large-scale--chip-based quantum computer is the large number of control signals needed to operate qubit systems. As system sizes scale up, the number of terminals required to connect to off-chip control electronics quickly becomes unmanageable. Here, we discuss a quantum-dot spin-qubit architecture that integrates on-chip control electronics, allowing for a significant reduction in the number of signal connections at the chip boundary. By arranging the qubits in a two-dimensional (2D) array with $\sim$12 $μ$m pitch, we create space to implement locally integrated sample-and-hold circuits. This allows to offset the inhomogeneities in the potential landscape across the array and to globally share the majority of the control signals for qubit operations. We make use of advanced circuit modeling software to go beyond conceptual drawings of the component layout, to assess the feasibility of the scheme through a concrete floor plan, including estimates of footprints for quantum and classical electronics, as well as routing of signal lines across the chip using different interconnect layers. We make use of local demultiplexing circuits to achieve an efficient signal-connection scaling leading to a Rent's exponent as low as $p = 0.43$. Furthermore, we use available data from state-of-the-art spin qubit and microelectronics technology development, as well as circuit models and simulations, to estimate the operation frequencies and power consumption of a million-qubit processor. This work presents a novel and complementary approach to previously proposed architectures, focusing on a feasible scheme to integrating quantum and classical hardware, and significantly closing the gap towards a fully CMOS-compatible quantum computer implementation.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Computing with spin qubits at the surface code error threshold

High-fidelity control of quantum bits is paramount for the reliable execution of quantum algorithms and for achieving fault-tolerance, the ability to correct errors faster than they occur. The central requirement for fault-tolerance is expressed in terms of an error threshold. Whereas the actual threshold depends on many details, a common target is the ~1% error threshold of the well-known surface code. Reaching two-qubit gate fidelities above 99% has been a long-standing major goal for semiconductor spin qubits. These qubits are well positioned for scaling as they can leverage advanced semiconductor technology. Here we report a spin-based quantum processor in silicon with single- and two-qubit gate fidelities all above 99.5%, extracted from gate set tomography. The average single-qubit gate fidelities remain above 99% when including crosstalk and idling errors on the neighboring qubit. Utilizing this high-fidelity gate set, we execute the demanding task of calculating molecular ground state energies using a variational quantum eigensolver algorithm. Now that the 99% barrier for the two-qubit gate fidelity has been surpassed, semiconductor qubits have gained credibility as a leading platform, not only for scaling but also for high-fidelity control.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures

Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions presents a significant challenge in quantum device development. We report synchrotron x-ray nanodiffraction measurements combined with dynamical x-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04 deg. and strain on the order of 10^-4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Nagaoka ferromagnetism observed in a quantum dot plaquette

Engineered, highly-controllable quantum systems hold promise as simulators of emergent physics beyond the capabilities of classical computers. An important problem in many-body physics is itinerant magnetism, which originates purely from long-range interactions of free electrons and whose existence in real systems has been subject to debate for decades. Here we use a quantum simulator consisting of a four-site square plaquette of quantum dots to demonstrate Nagaoka ferromagnetism. This form of itinerant magnetism has been rigorously studied theoretically but has remained unattainable in experiment. We load the plaquette with three electrons and demonstrate the predicted emergence of spontaneous ferromagnetic correlations through pairwise measurements of spin. We find the ferromagnetic ground state is remarkably robust to engineered disorder in the on-site potentials and can induce a transition to the low-spin state by changing the plaquette topology to an open chain. This demonstration of Nagaoka ferromagnetism highlights that quantum simulators can be used to study physical phenomena that have not yet been observed in any system before. The work also constitutes an important step towards large-scale quantum dot simulators of correlated electron systems.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

A sparse spin qubit array with integrated control electronics

Current implementations of quantum computers suffer from large numbers of control lines per qubit, becoming unmanageable with system scale up. Here, we discuss a sparse spin-qubit architecture featuring integrated control electronics significantly reducing the off-chip wire count. This quantum-classical hardware integration closes the feasibility gap towards a CMOS quantum computer.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Repetitive quantum non-demolition measurement and soft decoding of a silicon spin qubit

Quantum error correction is of crucial importance for fault-tolerant quantum computers. As an essential step towards the implementation of quantum error-correcting codes, quantum non-demolition (QND) measurements are needed to efficiently detect the state of a logical qubit without destroying it. Here we implement QND measurements in a Si/SiGe two-qubit system, with one qubit serving as the logical qubit and the other serving as the ancilla. Making use of a two-qubit controlled-rotation gate, the state of the logical qubit is mapped onto the ancilla, followed by a destructive readout of the ancilla. Repeating this procedure enhances the logical readout fidelity from $75.5\pm 0.3\%$ to $94.5 \pm 0.2\%$ after 15 ancilla readouts. In addition, we compare the conventional thresholding method with an improved signal processing method called soft decoding that makes use of analog information in the readout signal to better estimate the state of the logical qubit. We demonstrate that soft decoding leads to a significant reduction in the required number of repetitions when the readout errors become limited by Gaussian noise, for instance in the case of readouts with a low signal-to-noise ratio. These results pave the way for the implementation of quantum error correction with spin qubits in silicon.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Spatial Noise Correlations in a Si/SiGe Two-Qubit Device from Bell State Coherences

We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensitive only to either correlated or anti-correlated noise respectively. From these measurements, we find weak correlations in low-frequency noise acting on the two qubits, while no correlations could be detected in high-frequency noise. A theoretical model and numerical simulations give further insight into the additive effect of multiple independent (anti-)correlated noise sources with an asymmetric effect on the two qubits. Such a scenario is plausible given the data and our understanding of the physics of this system. This work is highly relevant for the design of optimized quantum error correction codes for spin qubits in quantum dot arrays, as well as for optimizing the design of future quantum dot arrays.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Quantum interference in an interfacial superconductor

The two-dimensional superconductor formed at the interface between the complex oxides, lanthanum aluminate (LAO) and strontium titanate (STO) has several intriguing properties that set it apart from conventional superconductors. Most notably, an electric field can be used to tune its critical temperature (T$_c$), revealing a dome-shaped phase diagram reminiscent of high T$_c$ superconductors. So far, experiments with oxide interfaces have measured quantities which probe only the magnitude of the superconducting order parameter and are not sensitive to its phase. Here, we perform phase-sensitive measurements by realizing the first superconducting quantum interference devices (SQUIDs) at the LAO/STO interface. Furthermore, we develop a new paradigm for the creation of superconducting circuit elements, where local gates enable in-situ creation and control of Josephson junctions. These gate-defined SQUIDs are unique in that the entire device is made from a single superconductor with purely electrostatic interfaces between the superconducting reservoir and the weak link. We complement our experiments with numerical simulations and show that the low superfluid density of this interfacial superconductor results in a large, gate-controllable kinetic inductance of the SQUID. Our observation of robust quantum interference opens up a new pathway to understand the nature of superconductivity at oxide interfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Ballistic Josephson junctions in edge-contacted graphene

Hybrid graphene-superconductor devices have attracted much attention since the early days of graphene research. So far, these studies have been limited to the case of diffusive transport through graphene with poorly defined and modest quality graphene-superconductor interfaces, usually combined with small critical magnetic fields of the superconducting electrodes. Here we report graphene based Josephson junctions with one-dimensional edge contacts of Molybdenum Rhenium. The contacts exhibit a well defined, transparent interface to the graphene, have a critical magnetic field of 8 Tesla at 4 Kelvin and the graphene has a high quality due to its encapsulation in hexagonal boron nitride. This allows us to study and exploit graphene Josephson junctions in a new regime, characterized by ballistic transport. We find that the critical current oscillates with the carrier density due to phase coherent interference of the electrons and holes that carry the supercurrent caused by the formation of a Fabry-Pérot cavity. Furthermore, relatively large supercurrents are observed over unprecedented long distances of up to 1.5 $μ$m. Finally, in the quantum Hall regime we observe broken symmetry states while the contacts remain superconducting. These achievements open up new avenues to exploit the Dirac nature of graphene in interaction with the superconducting state.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Fast Long-Distance Control of Spin Qubits by Photon Assisted Cotunneling

We investigate theoretically the long-distance coupling and spin exchange in an array of quantum dot spin qubits in the presence of microwaves. We find that photon assisted cotunneling is boosted at resonances between photon and energies of virtually occupied excited states and show how to make it spin selective. We identify configurations that enable fast switching and spin echo sequences for efficient and non-local manipulation of spin qubits. We devise configurations in which the near-resonantly boosted cotunneling provides non-local coupling which, up to certain limit, does not diminish with distance between the manipulated dots before it decays weakly with inverse distance.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Nanoscale Electrostatic Control of Oxide Interfaces

We develop a robust and versatile platform to define nanostructures at oxide interfaces via patterned top gates. Using LaAlO$_3$/SrTiO$_3$ as a model system, we demonstrate controllable electrostatic confinement of electrons to nanoscale regions in the conducting interface. The excellent gate response, ultra-low leakage currents, and long term stability of these gates allow us to perform a variety of studies in different device geometries from room temperature down to 50 mK. Using a split-gate device we demonstrate the formation of a narrow conducting channel whose width can be controllably reduced via the application of appropriate gate voltages. We also show that a single narrow gate can be used to induce locally a superconducting to insulating transition. Furthermore, in the superconducting regime we see indications of a gate-voltage controlled Josephson effect.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Universal Quantum Transducers based on Surface Acoustic Waves

We propose a universal, on-chip quantum transducer based on surface acoustic waves in piezo-active materials. Because of the intrinsic piezoelectric (and/or magnetostrictive) properties of the material, our approach provides a universal platform capable of coherently linking a broad array of qubits, including quantum dots, trapped ions, nitrogen-vacancy centers or superconducting qubits. The quantized modes of surface acoustic waves lie in the gigahertz range, can be strongly confined close to the surface in phononic cavities and guided in acoustic waveguides. We show that this type of surface acoustic excitations can be utilized efficiently as a quantum bus, serving as an on-chip, mechanical cavity-QED equivalent of microwave photons and enabling long-range coupling of a wide range of qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Nuclear Spin Dynamics in Double Quantum Dots: Multi-Stability, Dynamical Polarization, Criticality and Entanglement

We theoretically study the nuclear spin dynamics driven by electron transport and hyperfine interaction in an electrically-defined double quantum dot (DQD) in the Pauli-blockade regime. We derive a master-equation-based framework and show that the coupled electron-nuclear system displays an instability towards the buildup of large nuclear spin polarization gradients in the two quantum dots. In the presence of such inhomogeneous magnetic fields, a quantum interference effect in the collective hyperfine coupling results in sizable nuclear spin entanglement between the two quantum dots in the steady state of the evolution. We investigate this effect using analytical and numerical techniques, and demonstrate its robustness under various types of imperfections.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Long-range coherent coupling in a quantum dot array

Controlling long-range quantum correlations is central to quantum computation and simulation. In quantum dot arrays, experiments so far rely on nearest-neighbour couplings only, and inducing long-range correlations requires sequential local operations. Here we show that two distant sites can be tunnel coupled directly. The coupling is mediated by virtual occupation of an intermediate site, with a strength that is controlled via the energy detuning of this site. It permits a single charge to oscillate coherently between the outer sites of a triple dot array without passing through the middle, as demonstrated through the observation of Landau-Zener-Stückelberg interference. The long-range coupling significantly improves the prospects of fault-tolerant quantum computation using quantum dot arrays and opens up new avenues for performing quantum simulations in nanoscale devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Photon- and phonon-assisted tunneling in the three-dimensional charge stability diagram of a triple quantum dot array

We report both photon- and phonon-assisted tunneling transitions in a linear array of three quantum dots, which can only be understood by considering the full three-dimensionality of the charge stability diagram. Such tunneling transitions potentially contribute to leakage of qubits defined in this system. A detailed understanding of these transitions is important as they become more abundant and complex to analyze as quantum dot arrays are scaled up.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Steady-State Entanglement in the Nuclear Spin Dynamics of a Double Quantum Dot

We propose a scheme for the deterministic generation of steady-state entanglement between the two nuclear spin ensembles in an electrically defined double quantum dot. Due to quantum interference in the collective coupling to the electronic degrees of freedom, the nuclear system is actively driven into a two-mode squeezed-like target state. The entanglement build-up is accompanied by a self-polarization of the nuclear spins towards large Overhauser field gradients. Moreover, the feedback between the electronic and nuclear dynamics leads to multi-stability and criticality in the steady-state solutions.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Gate defined zero- and one-dimensional confinement in bilayer graphene

We report on the fabrication and measurement of nanoscale devices based on bilayer graphene sandwiched between hexagonal boron nitride bottom and top gate dielectrics. The top gates are patterned such that constrictions and islands can be electrostatically induced by applying appropriate voltages to the gates. The high quality of the devices becomes apparent from conductance quantization in the constrictions at low temperature. The islands exhibit clear Coulomb blockade and single-electron transport.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Graphene at high bias: cracking, layer by layer sublimation and fusing

Graphene and few-layer graphene at high bias expose a wealth of phenomena due to the high temperatures reached. With in-situ transmission electron microscopy (TEM) we observe directly how the current modifies the structure, and vice versa. In some samples, cracks propagate from the edges of the flakes, leading to the formation of narrow constrictions or to nanometer spaced gaps after breakdown. In other samples we find layer-by-layer evaporation of few-layer graphene, which could be exploited for the controlled production of single layer graphene from multi-layered samples. Surprisingly, we even find that two pieces of graphene that overlap can heal out at high bias and form one continuous sheet. These findings open up new avenues to structure graphene for specific device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Lattice Expansion in Seamless Bi layer Graphene Constrictions at High Bias

Our understanding of sp2 carbon nanostructures is still emerging and is important for the development of high performance all carbon devices. For example, in terms of the structural behavior of graphene or bi-layer graphene at high bias, little to nothing is known. To this end we investigated bi-layer graphene constrictions with closed edges (seamless) at high bias using in situ atomic resolution transmission electron microscopy. We directly observe a highly localized anomalously large lattice expansion inside the constriction. Both the current density and lattice expansion increase as the bi-layer graphene constriction narrows. As the constriction width decreases below 10 nm, shortly before failure, the current density rises to 4 \cdot 109 A cm-2 and the constriction exhibits a lattice expansion with a uniaxial component showing an expansion approaching 5 % and an isotropic component showing an expansion exceeding 1 %. The origin of the lattice expansion is hard to fully ascribe to thermal expansion. Impact ionization is a process in which charge carriers transfer from bonding states to antibonding states thus weakening bonds. The altered character of C-C bonds by impact ionization could explain the anomalously large lattice expansion we observe in seamless bi-layer graphene constrictions. Moreover, impact ionization might also contribute to the observed anisotropy in the lattice expansion, although strain is probably the predominant factor.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quantum Dots at Room Temperature carved out from Few-Layer Graphene

We present graphene quantum dots endowed with addition energies as large as 1.6 eV, fabricated by the controlled rupture of a graphene sheet subjected to a large electron current in air. The size of the quantum dot islands is estimated to be in the 1 nm range. The large addition energies allow for Coulomb blockade at room temperature, with possible application to single-electron devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Room-temperature gating of molecular junctions using few-layer graphene nanogap electrodes

We report on a method to fabricate and measure gateable molecular junctions which are stable at room temperature. The devices are made by depositing molecules inside a few-layer graphene nanogap, formed by feedback controlled electroburning. The gaps have separations on the order of 1-2 nm as estimated from a Simmons model for tunneling. The molecular junctions display gateable IV-characteristics at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Understanding the catalyst-free transformation of amorphous carbon into graphene by current-induced annealing

We shed light on the catalyst-free growth of graphene from amorphous carbon (a-C) by current-induced annealing by witnessing the mechanism both with in-situ transmission electron microscopy and with molecular dynamics simulations. Both in experiment and in simulation, we observe that small a-C clusters on top of a graphene substrate rearrange and crystallize into graphene patches. The process is aided by the high temperatures involved and by the van der Waals interactions with the substrate. Furthermore, in the presence of a-C, graphene can grow from the borders of holes and form a seamless graphene sheet, a novel finding that has not been reported before and that is reproduced by the simulations as well. These findings open up new avenues for bottom-up engineering of graphene-based devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Zero-bias conductance peak and Josephson effect in graphene-NbTiN junctions

We report electronic transport measurements of graphene contacted by NbTiN electrodes, which at low temperature remain superconducting up to at least 11 Tesla. In devices with a single superconducting contact, we find a more than twofold enhancement of the conductance at zero bias, which we interpret in terms of reflectionless tunneling. In devices with two superconducting contacts, we observe the Josephson effect, bipolar supercurrents and Fraunhofer patterns.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

DNA Translocation through Graphene Nanopores

Nanopores -- nanosized holes that can transport ions and molecules -- are very promising devices for genomic screening, in particular DNA sequencing. Both solid-state and biological pores suffer from the drawback, however, that the channel constituting the pore is long, viz. 10-100 times the distance between two bases in a DNA molecule (0.5 nm for single-stranded DNA). Here, we demonstrate that it is possible to realize and use ultrathin nanopores fabricated in graphene monolayers for single-molecule DNA translocation. The pores are obtained by placing a graphene flake over a microsize hole in a silicon nitride membrane and drilling a nanosize hole in the graphene using an electron beam. As individual DNA molecules translocate through the pore, characteristic temporary conductance changes are observed in the ionic current through the nanopore, setting the stage for future genomic screening.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Wedging Transfer of Nanostructures

We report a versatile water-based method for transferring nanostructures onto surfaces of various shapes and compositions. The transfer occurs through the intercalation of a layer of water between a hydrophilic substrate and a hydrophobic nanostructure (for example, graphene flakes, carbon nanotubes, metallic nanostructures, quantum dots, etc) locked within a hydrophobic polymer thin film. As a result, the film entrapping the nanostructure is lifted off and floats at the air-water interface. The nanostructure can subsequently be deposited onto a target substrate by the removal of the water and the dissolution of the polymeric film. We show examples where graphene flakes and patterned metallic nanostructures are precisely transferred onto a specific location on a variety of patterned substrates, even on top of curved objects such as microspheres. The method is simple to use, fast, and does not require advanced equipment.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Gate-defined graphene double quantum dot and excited state spectroscopy

A double quantum dot is formed in a graphene nanoribbon device using three top gates. These gates independently change the number of electrons on each dot and tune the inter-dot coupling. Transport through excited states is observed in the weakly coupled double dot regime. We extract from the measurements all relevant capacitances of the double dot system, as well as the quantized level spacing.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Aharonov-Bohm effect in graphene

We investigate experimentally transport through ring-shaped devices etched in graphene and observe clear Aharonov-Bohm conductance oscillations. The temperature dependence of the oscillation amplitude indicates that below 1 K the phase coherence length is comparable to or larger than the size of the ring. An increase in the amplitude is observed at high magnetic field, when the cyclotron diameter becomes comparable to the width of the arms of the ring. By measuring the dependence on gate voltage, we also observe an unexpected linear dependence of the oscillation amplitude on the ring conductance, which had not been reported earlier in rings made using conventional metals or semiconducting heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

NMR Techniques for Quantum Control and Computation

Fifty years of developments in nuclear magnetic resonance (NMR) have resulted in an unrivaled degree of control of the dynamics of coupled two-level quantum systems. This coherent control of nuclear spin dynamics has recently been taken to a new level, motivated by the interest in quantum information processing. NMR has been the workhorse for the experimental implementation of quantum protocols, allowing exquisite control of systems up to seven qubits in size. Here, we survey and summarize a broad variety of pulse control and tomographic techniques which have been developed for and used in NMR quantum computation. Many of these will be useful in other quantum systems now being considered for implementation of quantum information processing tasks.

0 citations0 reviewsNo code linkedOpen access