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Source author record

Gerasimos Konstantatos

Gerasimos Konstantatos appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.app-phcond-mat.mes-hallphysics.opticscond-mat.mtrl-sciphysics.ins-det

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Published work

9 published item(s)

preprint2022arXiv

Hybrid 2D-QD MoS2 PbSe Quantum Dot Broadband Photodetectors with High-Sensitivity and Room-Temperature Operation at 2.5 μm

Broadband infrared photodetectors have profound importance in diverse applications including security, gas sensing, bioimaging, spectroscopy for food quality, and recycling, just to name a few. Yet, these applications can currently be served by expensive epitaxially grown photodetectors, limiting their market potential and social impact. The use of colloidal quantum dots (CQDs) and 2D-materials in a hybrid layout is an attractive alternative to design low-cost CMOS-compatible infrared photodetectors. However, the spectral sensitivity of these conventional hybrid detectors has been restricted to 2.1 um. Herein, we present a hybrid structure comprising MoS2 with PbSe CQDs to extend their sensitivity further towards the mid-wave infrared, up to 3 um. We achieve room temperature responsivity of 137.6 A/W and a detectivity of 7.7 10^10 Jones at 2.55 um owing to highly efficient photoexcited carrier separation at the interface of MoS2 and PbSe in combination with an oxide-coating to reduce dark current; the highest value yet for a PbSe based hybrid device. These findings strongly support the successful fabrication of hybrid devices which may pave the pathway for cost-effective, high performance, next-generation, novel photodetectors.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Low-threshold, highly stable colloidal quantum dot short-wave infrared laser enabled by suppression of trap-assisted Auger recombination

Pb-chalcogenide colloidal quantum dots (CQDs) are attractive materials to be used as tuneable laser media across the infrared spectrum. However, excessive nonradiative Auger recombination due to the presence of trap states outcompetes light amplification by rapidly annihilating the exciton population, leading to high gain thresholds. Here, we employ a binary blend of CQDs and ZnO nanocrystals in order to passivate the in-gap trap states of PbS-CQD gain medium. Using transient absorption, we measure a five-fold increase in Auger lifetime demonstrating the suppression of trap-assisted Auger recombination. By doing so, we achieve a two-fold reduction in amplified spontaneous emission (ASE) threshold. Finally, by integrating our proposed binary blend to a DFB resonator, we demonstrate single-mode lasing emission at 1650 nm with a linewidth of 1.23 nm (0.62 meV), operating at a low lasing threshold of ~385 μJ.cm-2. The Auger suppression in this system has allowed to achieve unprecedented lasing emission stability for a CQD laser with recorded continuous operation of 5 hours at room temperature and ambient conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

On-Demand Activation of Photochromic Nanoheaters for High Color Purity 3D Printing

The creation of white and multicoloured 3D-printed objects with high colour fidelity via powder sintering processes is currently limited by discolouration from thermal sensitizers used in the printing process. Here we circumvent this problem by using switchable, photochromic tungsten oxide nanoparticles, which are colourless even at high concentrations. Upon ultraviolet illumination, the tungsten oxide nanoparticles can be reversibly activated making them highly absorbing in the infrared. Their strong infrared absorption upon activation renders them efficient photothermal sensitizers that can act as fusing agents for polymer powders in sintering-based 3D printing. The WO3 nanoparticles show fast activation times, and when mixed with polyamide powders they exhibit a heating-to-colour-change ratio greatly exceeding other sensitizers in the literature. Upon mixing with coloured inks, powders containing WO3 display identical colouration to a pristine powder. This demonstrates the potential of WO3, and photochromic nanoparticles in general as a new class of material for advanced manufacturing.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Visible-blind ZnMgO Colloidal Quantum Dot Downconverters expand Silicon CMOS Sensors Spectral Coverage into Ultraviolet and enable UV Band Discrimination

Selective spectral detection of ultraviolet (UV) radiation is highly important across numerous fields from health and safety to industrial and environmental monitoring applications. Herein, we report a non-toxic, visible-blind, inorganic quantum dot (QD)-based sensing scheme that expands the spectral coverage of Silicon CMOS sensors into the UV, enabling efficient UV detection without affecting the sensor performance in the visible and UV-band discrimination. The reported scheme employs zinc magnesium oxide (ZnMgO) QDs with compositionally tunable absorption across UV and high photoluminescence quantum yield (PLQY) in the visible. The efficient luminescence and large stokes shift of these QDs have been exploited herein to act as an efficient downconverting material that enhances the UV sensitivity of Si-photodetector (Si-PD). A Si-PD integrated with the QDs results in a nine-fold improvement in photoresponsivity from 0.83 mA/W to 7.5 mA/W at 260 nm. Leveraging the tunability of these QDs we further report on a simple UV band identification scheme, using two distinct band gap ZnMgO QDs stacked in a tandem architecture whose spectral emission color depends on the UV-band excitation light. The downconverting stack enables facile discrimination of UV light using a standard CMOS image sensor (camera) or by the naked eye and avoids the use of complex optics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

High Sensitivity Hybrid PbS CQD-TMDC Photodetectors up to 2 $μ$m

Recent approaches to develop infrared photodetectors characterized by high sensitivities, broadband spectral coverage, easy integration with silicon electronics and low cost have been based on hybrid structures of transition metal dichalcogenides (TMDCs) and PbS colloidal quantum dots (CQDs). However, to date, such photodetectors have been reported with high sensitivity up to 1.5 $μ$m. Here we extend the spectral coverage of this technology towards 2 $μ$m demonstrating for the first time compelling performance with responsivities 1400 A/W at 1.8 $μ$m with 1V bias and detectivities as high as $10^{12}$ Jones at room temperature. To do this we studied two TMDC materials as a carrier transport layer, tungsten disulfide (WS$_2$) and molybdenum disulfide (MoS$_2$) and demonstrate that WS$_2$ based hybrid photodetectors outperform those of MoS$_2$ due to a more adequate band alignment that favors carrier transfer from the CQDs.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Size and temperature dependent intraband optical studies of heavily n-doped PbS quantum dot solids

Steady-state access to intraband transitions in colloidal quantum dots (CQDs), via heavy doping, allows exploiting the electromagnetic spectrum at energies below the band gap. CQD intraband optoelectronics opens up a new path to cheap mid- and long-wavelength infrared photodetectors and light-emitting devices, which today employ mostly epitaxial materials. As a recent field of experimental research, thorough studies of the basic properties of intraband transitions in CQDs are still lacking. In this work, we investigate the size and temperature dependence of the intraband transition in heavily n-doped PbS quantum dot (QD) films. We measure the absorption coefficient of the intraband transition to be in the order of $10^4$ cm$^{-1}$, which is comparable to the value of the interband absorption coefficient. Additionally, we determine the size-dependence of the oscillator strength of the intraband transition. We demonstrate a negative dependence of the intraband energy with temperature, in contrast to the positive dependence of the interband transition.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Achieving ultrahigh carrier mobility and photo-responsivity in solution-processed perovskite/carbon nanotubes phototransistors

Organolead trihalide perovskites have drawn substantial interest for applications in photovoltaic and optoelectronic devices due to their low processing cost and remarkable physical properties. However, perovskite thin films still suffer from low carrier mobility, limiting their device performance and application potential. Here we report that embedding single-walled carbon nanotubes into halide perovskite films can significantly enhance the hole and electron mobilities to record-high values of 595.3 and 108.7 cm2 V-1 s-1, respectively. In the ambipolar phototransistors with such hybrid channels, photo-carriers generated in the light-absorbing perovskite matrix are transported by the carbon nanotubes, leading to ultrahigh detectivity of 6 * 1014 Jones and responsivity of 1 * 104 A W-1. We find that the perovskite precursor in dimethylformamide solution serve as an excellent stabilizer for the dispersion of carbon nanotubes, which potentially extend the scope of applications of perovskites in solution-processed functional composites. The unprecedented high performances underscore the perovskite/carbon nanotubes hybrids as an emerging class of functional materials in optoelectronic and other applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Multiband Tunable Large Area Hot Carrier Plasmonic-Crystal Photodetectors

Optoelectronic functionalities of photodection and light harnessing rely on the band-to-band excitation of semiconductors, thus the spectral response of the devices is dictated and limited by their bandgap. A novel approach, free from this restriction, is to harvest the energetic electrons generated by the relaxation of a plasmonic resonance in the vicinity of a metal-semiconductor junction. In this configuration, the optoelectronic and spectral response of the detectors can be designed ad hoc just by tailoring the topology of metal structures, which has tremendous applications in solar energy harvesting and photodetection. Fully exploiting hot electron based optoelectronics yet requires a platform that combines their exotic spectral capabilities with large scale manufacturing and high performance. Herein we report the first implementation of a large area, low cost quasi 3D plasmonic crystal (PC) for hot electron photodetection, showcasing multiband selectivity in the VIS-NIR and unprecedented responsivity of 70 mA/W.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Hybrid graphene-quantum dot phototransistors with ultrahigh gain

Graphene has emerged as a novel platform for opto-electronic applications and photodetector, but the inefficient conversion from light to current has so far been an important roadblock. The main challenge has been to increase the light absorption efficiency and to provide a gain mechanism where multiple charge carriers are created from one incident photon. Here, we take advantage of the strong light absorption in quantum dots and the two-dimensionality and high mobility of graphene to merge these materials into a hybrid system for photodetection with extremely high sensitivity. Exploiting charge transfer between the two materials, we realize for the first time, graphene-based phototransistors that show ultrahigh gain of 10^8 and ten orders of magnitude larger responsivity compared to pristine graphene photodetectors. These hybrid graphene-quantum dot phototransistors exhibit gate-tunable sensitivity, spectral selectivity from the shortwave infrared to the visible, and can be integrated with current circuit technologies.

0 citations0 reviewsNo code linkedOpen access