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Mariona Dalmases

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physics.app-ph cond-mat.mes-hall cond-mat.mtrl-sci physics.optics

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preprint2022arXiv

Hybrid 2D-QD MoS2 PbSe Quantum Dot Broadband Photodetectors with High-Sensitivity and Room-Temperature Operation at 2.5 μm

Broadband infrared photodetectors have profound importance in diverse applications including security, gas sensing, bioimaging, spectroscopy for food quality, and recycling, just to name a few. Yet, these applications can currently be served by expensive epitaxially grown photodetectors, limiting their market potential and social impact. The use of colloidal quantum dots (CQDs) and 2D-materials in a hybrid layout is an attractive alternative to design low-cost CMOS-compatible infrared photodetectors. However, the spectral sensitivity of these conventional hybrid detectors has been restricted to 2.1 um. Herein, we present a hybrid structure comprising MoS2 with PbSe CQDs to extend their sensitivity further towards the mid-wave infrared, up to 3 um. We achieve room temperature responsivity of 137.6 A/W and a detectivity of 7.7 10^10 Jones at 2.55 um owing to highly efficient photoexcited carrier separation at the interface of MoS2 and PbSe in combination with an oxide-coating to reduce dark current; the highest value yet for a PbSe based hybrid device. These findings strongly support the successful fabrication of hybrid devices which may pave the pathway for cost-effective, high performance, next-generation, novel photodetectors.

preprint2022arXiv

Low-threshold, highly stable colloidal quantum dot short-wave infrared laser enabled by suppression of trap-assisted Auger recombination

Pb-chalcogenide colloidal quantum dots (CQDs) are attractive materials to be used as tuneable laser media across the infrared spectrum. However, excessive nonradiative Auger recombination due to the presence of trap states outcompetes light amplification by rapidly annihilating the exciton population, leading to high gain thresholds. Here, we employ a binary blend of CQDs and ZnO nanocrystals in order to passivate the in-gap trap states of PbS-CQD gain medium. Using transient absorption, we measure a five-fold increase in Auger lifetime demonstrating the suppression of trap-assisted Auger recombination. By doing so, we achieve a two-fold reduction in amplified spontaneous emission (ASE) threshold. Finally, by integrating our proposed binary blend to a DFB resonator, we demonstrate single-mode lasing emission at 1650 nm with a linewidth of 1.23 nm (0.62 meV), operating at a low lasing threshold of ~385 μJ.cm-2. The Auger suppression in this system has allowed to achieve unprecedented lasing emission stability for a CQD laser with recorded continuous operation of 5 hours at room temperature and ambient conditions.

preprint2020arXiv

Size and temperature dependent intraband optical studies of heavily n-doped PbS quantum dot solids

Steady-state access to intraband transitions in colloidal quantum dots (CQDs), via heavy doping, allows exploiting the electromagnetic spectrum at energies below the band gap. CQD intraband optoelectronics opens up a new path to cheap mid- and long-wavelength infrared photodetectors and light-emitting devices, which today employ mostly epitaxial materials. As a recent field of experimental research, thorough studies of the basic properties of intraband transitions in CQDs are still lacking. In this work, we investigate the size and temperature dependence of the intraband transition in heavily n-doped PbS quantum dot (QD) films. We measure the absorption coefficient of the intraband transition to be in the order of $10^4$ cm$^{-1}$, which is comparable to the value of the interband absorption coefficient. Additionally, we determine the size-dependence of the oscillator strength of the intraband transition. We demonstrate a negative dependence of the intraband energy with temperature, in contrast to the positive dependence of the interband transition.