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Researcher profile

M. Grayson

M. Grayson contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.otherphysics.ins-det

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Published work

7 published item(s)

preprint2013arXiv

Driving Perpendicular Heat Flow: Ambipolar Transverse Thermoelectrics for Microscale and Cryogenic Peltier Cooling

Whereas thermoelectric performance is normally limited by the figure of merit ZT, transverse thermoelectrics can achieve arbitrarily large temperature differences in a single leg even with inferior ZT by being geometrically tapered. We introduce a band-engineered transverse thermoelectric with p-type Seebeck in one direction and n-type orthogonal, resulting in off-diagonal terms that drive heat flow transverse to electrical current. Such materials are advantageous for microscale devices and cryogenic temperatures -- exactly the regimes where standard longitudinal thermoelectrics fail. InAs/GaSb type II superlattices are shown to have the appropriate band structure for use as a transverse thermoelectric.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Generalized four-point characterization method for resistive and capacitive contacts

In this paper, a four-point characterization method is developed for resistive samples connected to either resistive or capacitive contacts. Provided the circuit equivalent of the complete measurement system is known including coaxial cable and connector capacitances as well as source output and amplifier input impedances, a frequency range and capacitive scaling factor can be determined, whereby four-point characterization can be performed. The technique is demonstrated with a discrete element test sample over a wide frequency range using lock-in measurement techniques from 1 Hz - 100 kHz. The data fit well with a circuit simulation of the entire measurement system. A high impedance preamplifier input stage gives best results, since lock-in input impedances may differ from manufacturer specifications. The analysis presented here establishes the utility of capacitive contacts for four-point characterizations at low frequency.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Separating parallel conduction from two-dimensional magnetotransport in high mobility InP/InGaAs MOCVD-grown heterostructures

In this Letter, four-point magnetotransport of high mobility InGaAs/InP heterointerfaces is measured from 1.6 K to 300 K and from 0 to 15 T, and an analysis is shown whereby the mobility and density of the two-dimensional (2D) accumulation layer can be separately characterized from that of the parallel conducting dopant layer over all but a small intermediate temperature range. Standard magnetotransport regimes are defined as the temperature increases from 1.6 K to 300 K, namely quantum Hall (QH), Shubnikov de Haas (SdH), and Drude regimes (D), and in the QH and D regimes different analyses are applied to deduce densities and mobilities of both layers separately. Quantitative conditions for the intermediate SdH regime are defined, within which both QH and D analyses fail. The density and activation energy of unintentional donors at the InP epilayer/substrate interface is deduced. At base temperature, QH minima are resolved down to B = 0.4 T at nu = 20, revealing a mobility of mu = 160,000 cm^2/Vs. The 2D system maintains this high mobility up to at least 40 K in this high quality structure.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

The visibility of IQHE at sharp edges: Experimental proposals based on interactions and edge electrostatics

The influence of the incompressible strips on the integer quantized Hall effect (IQHE) is investigated, considering a cleaved-edge overgrown (CEO) sample as an experimentally realizable sharp edge system. We propose a set of experiments to clarify the distinction between the large-sample limit when bulk disorder defines the IQHE plateau width and the small-sample limit smaller than the disorder correlation length, when self-consistent edge electrostatics define the IQHE plateau width. The large-sample or bulk QH regime is described by the usual localization picture, whereas the small-sample or edge regime is discussed within the compressible/incompressible strips picture, known as the screening theory of QH edges. Utilizing the unusually sharp edge profiles of the CEO samples, a Hall bar design is proposed to manipulate the edge potential profile from smooth to extremely sharp. By making use of a side-gate perpendicular to the two dimensional electron system, it is shown that the plateau widths can be changed or even eliminated altogether. Hence, the visibility of IQHE is strongly influenced when adjusting the edge potential profile and/or changing the dc current direction under high currents in the non-linear transport regime. As a second investigation, we consider two different types of ohmic contacts, namely highly transmitting (ideal) and highly reflecting (non-ideal) contacts. We show that if the injection contacts are non-ideal, however still ohmic, it is possible to measure directly the non-quantized transport taking place at the bulk of the CEO samples. The results of the experiments we propose will clarify the influence of the edge potential profile and the quality of the contacts, under quantized Hall conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Thermal conductivity of InAs/GaSb superlattice

The cross-plane thermal conductivity of a type II InAs/GaSb superlattice (T2SL) is measured from 13 K to 300 K using the 3ω method. Thermal conductivity is reduced by up to 2 orders of magnitude relative to the GaSb bulk substrate. The low thermal conductivity of around 1-8 W/m\cdotK may serve as an advantage for thermoelectric applications at low temperatures, while presenting a challenge for T2SL quantum cascade lasers and high power light emitting diodes. We introduce a power-law approximation to model non-linearities in the thermal conductivity, resulting in increased or decreased peak temperature for negative or positive exponents, respectively.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Valley degeneracy in biaxially strained aluminum arsenide quantum wells

This paper details a complete formalism for calculating electron subband energy and degeneracy in strained multi-valley quantum wells grown along any orientation with explicit results for the AlAs quantum well case. A standardized rotation matrix is defined to transform from the conventional- cubic-cell basis to the quantum-well-transport basis whereby effective mass tensors, valley vectors, strain matrices, anisotropic strain ratios, and scattering vectors are all defined in their respective bases. The specific cases of (001)-, (110)-, and (111)-oriented aluminum arsenide (AlAs) quantum wells are examined, as is the unconventional (411) facet, which is of particular importance in AlAs literature. Calculations of electron confinement and strain in the (001), (110), and (411) facets determine the critical well width for crossover from double- to single-valley degeneracy in each system. The notation is generalized to include miscut angles, and can be adapted to other multi-valley systems. To help classify anisotropic inter-valley scattering events, a new primitive unit cell is defined in momentum space which allows one to distinguish purely in-plane inter-valley scattering events from those that requires an out-of-plane momentum scattering component.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Corner overgrowth: Bending a high mobility two-dimensional electron system by 90 degrees

Introducing an epitaxial growth technique called corner overgrowth, we fabricate a quantum confinement structure consisting of a high-mobility GaAs/AlGaAs heterojunction overgrown on top of an ex-situ cleaved substrate corner. The resulting corner-junction quantum-well heterostructure effectively bends a two-dimensional electron system (2DES) at an atomically sharp $90^{\rm o}$ angle. The high-mobility 2DES demonstrates fractional quantum Hall effect on both facets. Lossless edge-channel conduction over the corner confirms a continuum of 2D electrons across the junction, consistent with Schroedinger-Poisson calculations of the electron distribution. This growth technique differs distinctly from cleaved-edge overgrowth and enables a complementary class of new embedded quantum heterostructures.

0 citations0 reviewsNo code linkedOpen access