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G. Joshi

G. Joshi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.app-ph

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Published work

5 published item(s)

preprint2019arXiv

Adjustable coupling and in-situ variable frequency EPR probe with loop-gap resonators for spectroscopy up to X-band

In standard electron paramagnetic resonance (EPR) spectroscopy, the frequency of an experiment is set and the spectrum is acquired using magnetic field as the independent variable. There are cases in which it is desirable instead to fix the field and tune the frequency such as when studying avoided level crossings. We have designed and tested an adjustable frequency and variable coupling EPR probe with loop-gap resonators (LGRs) that works at a temperature down to 1.8 K. The frequency is tuned by adjusting the height of a dielectric piece of sapphire inserted into the gap of an LGR; coupling of the microwave antenna is varied with the height of antenna above the LGR. Both coupling antenna and dielectric are located within the cryogenic sample chamber, but their motion is controlled with external micrometers located outside the cryostat. The frequency of the LGR can be adjusted by more than 1 GHz. To cover a wide range of frequencies, different LGRs can be designed to cover frequencies up to X-band. We demonstrate the operation of our probe by mapping out avoided crossings for the Ni$_4$ single-molecule magnet to determine the tunnel splittings with high precision.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Electric-field quenching of optically detected magnetic resonance in a $π$-conjugated polymer

Electric fields are central to the operation of optoelectronic devices based on conjugated polymers since they drive the recombination of electrons and holes to excitons in organic light-emitting diodes but are also responsible for the dissociation of excitons in solar cells. One way to track the microscopic effect of electric fields on charge carriers formed under illumination of a polymer film is to exploit the fluorescence arising from delayed recombination of carrier pairs, a process which is fundamentally spin dependent. Such spin-dependent recombination can be probed directly in fluorescence, by optically detected magnetic resonance (ODMR). Depending on the relative orientation, an electric field may either dissociate or stabilize an electron-hole carrier pair. We find that the ODMR signal in a polymer film is quenched in an electric field, but that, at fields exceeding 1 MV/cm, this quenching saturates. This finding contrasts the complete ODMR suppression that was previously observed in polymeric photodiodes, indicating that exciton-charge interactions---analogous to Auger recombination in crystalline semiconductors---may constitute the dominant carrier-pair dissociation process in organic electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Morphology effects on spin-dependent transport and recombination in polyfluorene thin films

We have studied the role of spin-dependent processes on conductivity in polyfluorene (PFO) thin films by conducting continuous wave (c.w.) electrically detected magnetic resonance (EDMR) spectroscopy at temperatures between 10 K and 293 K using microwave frequencies between about 100 MHz and 20 GHz as well as pulsed EDMR at X-band. Variable frequency EDMR allows us to establish the role of spin-orbit coupling in spin-dependent processes, pulsed EDMR probes coherent spin motion effects. We used PFO for this study in order to allow for the investigation of the effects of microscopic morphological ordering since this material can adopt two distinct intrachain morphologies: an amorphous (glassy) phase, and an ordered (beta) phase. In thin films of organic light-emitting diodes (OLEDs) the appearance of a particular phase can be controlled by deposition parameters, and is verified by electroluminescence spectroscopy. We conducted multi-frequency c.w. EDMR, electrically detected Rabi spinbeat experiments, Hahn-echo and inversion-recovery measurements. Coherent echo spectroscopy reveals electrically detected electron spin-echo envelope modulation (ESEEM) due to the precession of the carrier spins around the protons. Our results demonstrate that while conformational disorder can influence the observed EDMR signals, including the sign of the current changes on resonance as well as the magnitudes of local hyperfine fields and charge carrier spin-orbit interactions, it does not qualitatively affect the nature of spin-dependent transitions in this material. At 293 K and 10 K, polaron-pair recombination through weakly spin-spin coupled intermediate charge carrier pair states is dominant, while at low temperatures, additional signatures of spin-dependent charge transport through the interaction of polarons with triplet excitons are seen in the half-field resonance of a triplet spin-1 species.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Experimental Determination of the Lorenz Number in Cu0.01Bi2Te2.7Se0.3 and Bi0.88Sb0.12

Nanostructuring has been shown to be an effective approach to reduce the lattice thermal conductivity and improve the thermoelectric figure of merit. Because the experimentally measured thermal conductivity includes contributions from both carriers and phonons, separating out the phonon contribution has been difficult and is mostly based on estimating the electronic contributions using the Wiedemann-Franz law. In this paper, an experimental method to directly measure electronic contributions to the thermal conductivity is presented and applied to Cu0.01Bi2Te2.7Se0.3, [Cu0.01Bi2Te2.7Se0.3]0.98Ni0.02, and Bi0.88Sb0.12. By measuring the thermal conductivity under magnetic field, electronic contributions to thermal conductivity can be extracted, leading to knowledge of the Lorenz number in thermoelectric materials.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Thermoelectric Properties of Ho-doped Bi1-xSbx

The Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization are reported for temperatures between 5 and 350 K for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1 and 3% atomic levels. The alloys were prepared using a dc hot-pressing method, and are shown to be single phase for both Ho contents with grain sizes on the average of 900 nm. We find the parent compound has a maximum of ZT = 0.28 at 231 K, while doping 1% Ho increases the maximum ZT to 0.31 at 221 K and the 3% doped sample suppresses the maximum ZT = 0.24 at a temperature of 260 K.

0 citations0 reviewsNo code linkedOpen access