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C. Boehme

C. Boehme appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallquant-phcond-mat.dis-nncond-mat.otherphysics.atom-ph

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Published work

12 published item(s)

preprint2021arXiv

Spin-transport in an organic semiconductor without free charge carrier involvement

We have experimentally tested the hypothesis of free charge carrier mediated spin-transport in the small molecule organic semiconductor Alq3 at room temperature. A spin current was pumped into this material by pulsed ferromagnetic resonance of an adjacent NiFe layer, while a charge current resulting from this spin current via the inverse spin-Hall effect (ISHE) was detected in a Pt layer adjacent on the other side of the Alq3 layer, confirming a pure spin current through the Alq3 layer. Charge carrier spin states in Alq3, were then randomized by simultaneous application of electron paramagnetic resonance (EPR). No influence of the EPR excitation on the ISHE current was found, implying that spin-transport is not mediated by free charge-carriers in Alq3.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin-Dependent Charge-Carrier Recombination Processes in Tris(8-Hydroxyquinolinato) Aluminum

We have studied the nature and dynamics of spin-dependent charge carrier recombination in Tris(8-hydroxyquinolinato) aluminum (Alq$_3$) films in light emitting diodes at room temperature using continuous wave and pulsed electrically detected magnetic resonance (EDMR) spectroscopy. We found that the EDMR signal is dominated by an electron-hole recombination process, and another, weaker EDMR signal whose fundamental nature was investigated. From the pulsed EDMR measurements we obtained a carrier spin relaxation time, $T_2 = 45\pm 25$ ns which is much shorter than $T_2$ in conjugated polymers, but relatively long for a molecule containing elements with high atomic number. Using multi-frequency continuous wave EDMR spectroscopy, we obtained the local hyperfine field distributions for electrons and holes, as well as their respective spin-orbit coupling induced g-factor and g-strain values.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Two-photon absorption in a two-level system enabled by noise

We address the textbook problem of dynamics of a spin placed in a dc magnetic field and subjected to an ac drive. If the drive is polarized in the plane perpendicular to the dc field, the drive photons are resonantly absorbed when the spacing between the Zeeman levels is close to the photon energy. This is the only resonance when the drive is circularly polarized. For linearly polarized drive, additional resonances corresponding to absorption of three, five, and multiple odd numbers of photons is possible. Interaction with the environment causes the broadening of the absorption lines. We demonstrate that the interaction with environment enables the forbidden two-photon absorption. We adopt a model of the environment in the form of random telegraph noise produced by a single fluctuator. As a result of the synchronous time fluctuations of different components of the random field, the shape of the two-photon absorption line is non-Lorentzian and depends dramatically on the drive amplitude. This shape is a monotonic curve at strong drive, while, at weak drive, it develops a two-peak structure reminiscent of an induced transparency on resonance.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Electric-field quenching of optically detected magnetic resonance in a $π$-conjugated polymer

Electric fields are central to the operation of optoelectronic devices based on conjugated polymers since they drive the recombination of electrons and holes to excitons in organic light-emitting diodes but are also responsible for the dissociation of excitons in solar cells. One way to track the microscopic effect of electric fields on charge carriers formed under illumination of a polymer film is to exploit the fluorescence arising from delayed recombination of carrier pairs, a process which is fundamentally spin dependent. Such spin-dependent recombination can be probed directly in fluorescence, by optically detected magnetic resonance (ODMR). Depending on the relative orientation, an electric field may either dissociate or stabilize an electron-hole carrier pair. We find that the ODMR signal in a polymer film is quenched in an electric field, but that, at fields exceeding 1 MV/cm, this quenching saturates. This finding contrasts the complete ODMR suppression that was previously observed in polymeric photodiodes, indicating that exciton-charge interactions---analogous to Auger recombination in crystalline semiconductors---may constitute the dominant carrier-pair dissociation process in organic electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Morphology effects on spin-dependent transport and recombination in polyfluorene thin films

We have studied the role of spin-dependent processes on conductivity in polyfluorene (PFO) thin films by conducting continuous wave (c.w.) electrically detected magnetic resonance (EDMR) spectroscopy at temperatures between 10 K and 293 K using microwave frequencies between about 100 MHz and 20 GHz as well as pulsed EDMR at X-band. Variable frequency EDMR allows us to establish the role of spin-orbit coupling in spin-dependent processes, pulsed EDMR probes coherent spin motion effects. We used PFO for this study in order to allow for the investigation of the effects of microscopic morphological ordering since this material can adopt two distinct intrachain morphologies: an amorphous (glassy) phase, and an ordered (beta) phase. In thin films of organic light-emitting diodes (OLEDs) the appearance of a particular phase can be controlled by deposition parameters, and is verified by electroluminescence spectroscopy. We conducted multi-frequency c.w. EDMR, electrically detected Rabi spinbeat experiments, Hahn-echo and inversion-recovery measurements. Coherent echo spectroscopy reveals electrically detected electron spin-echo envelope modulation (ESEEM) due to the precession of the carrier spins around the protons. Our results demonstrate that while conformational disorder can influence the observed EDMR signals, including the sign of the current changes on resonance as well as the magnitudes of local hyperfine fields and charge carrier spin-orbit interactions, it does not qualitatively affect the nature of spin-dependent transitions in this material. At 293 K and 10 K, polaron-pair recombination through weakly spin-spin coupled intermediate charge carrier pair states is dominant, while at low temperatures, additional signatures of spin-dependent charge transport through the interaction of polarons with triplet excitons are seen in the half-field resonance of a triplet spin-1 species.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

An atomic resolution, single-spin magnetic resonance detection concept based on tunneling force microscopy

A comprehensive study of a force detected single-spin magnetic resonance measurement concept with atomic spatial resolution is presented. The method is based upon electrostatic force detection of spin-selection rule controlled single-electron tunneling between two electrically isolated paramagnetic states. Single spin magnetic resonance detection is possible by measuring the force detected tunneling charge noise on and off spin resonance. Simulation results of this charge noise, based upon physical models of the tunneling and spin physics, are directly compared to measured AFM system noise. The results show that the approach could provide single spin measurement of electrically isolated qubit states with atomic spatial resolution at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Synthesis of thin silicon dioxide layers with high E' center densities and investigation of the E' center spin relaxation dynamics for single spin readout applications

Methods for the creation of thin amorphous silicon dioxide (aSiO2) layers on crystalline silicon substrates with very high densities of silicon dangling bonds (so called E' centers) have been explored and volume densities of [E']> 5x10^18 cm-3 throughout a 60nm thick film have been demonstrated by exposure of a thermal oxide layer to a low pressure Argon radio frequency plasma. While the generated high E' center densities can be annealed completely at 300C, they are comparatively stable at room temperature with a half life of about one month. Spin relaxation time measurements of these states between T = 5K and T = 70K show that the phase relaxation time T2 does not strongly depend on temperature and compared to SiO2 films of lower E' density, is significantly shortened. The longitudinal relaxation time T1 ~195(5)us at room temperature is in agreement with low-density SiO2. In contrast, T1 ~625(51)us at T = 5K is much shorter than in films of lower E' density. These results are discussed in the context of E' centers being used as probe spins for spin-selection rules based single spin-readout.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Analytical description of spin-Rabi oscillation controlled electronic transitions rates between weakly coupled pairs of paramagnetic states with S=1/2

We report on an analytical description of spin-dependent electronic transition rates which are controlled by a radiation induced spin-Rabi oscillation of weakly spin-exchange and spin-dipolar coupled paramagnetic states (S=1/2). The oscillation components (the Fourier content) of the net transition rates within spin-pair ensembles are derived for randomly distributed spin resonances with account of a possible correlation between the two distributions that correspond to the two individual pair partners. The results presented here show that when electrically or optically detected Rabi spectroscopy is conducted under an increasing driving field B_ 1, the Rabi spectrum evolves from a single resonance peak at s=Ω_R, where Ω_R=γB_1 is the Rabi frequency (γis the gyromagnetic ratio), to three peaks at s= Ω_R, s=2Ω_R, and at low s<< Ω_R. The crossover between the two regimes takes place when Ω_R exceeds the expectation value δ_0 of the difference of the Zeeman energies within the pairs, which corresponds to the broadening of the magnetic resonance lines in the presence of disorder caused by hyperfine field or distributions of Lande g-factors. We capture this crossover by analytically calculating the shapes of all three peaks at arbitrary relation between Ω_R and δ_0. When the peaks are well-developed their widths are Δs ~ δ_0^2/Ω_R.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Analytical study of spin-dependent transition rates within pairs of dipolar and strongly exchange coupled spins with (S = 1/2) during magnetic resonant excitation

We study theoretically the spectrum, F(s), of spin-dependent transition rates within dipolar D and exchange J coupled pairs of two spins with S=1/2 undergoing Rabi oscillations due to a coherent magnetic resonant excitation. We show that the Rabi oscillation controlled rates exhibit a spectrum with three frequency components. When exchange is stronger than the Rabi frequency (J>>Ω_R), the frequency components of the Rabi oscillation do not depend on J, rather they are determined by the relation between Ω_R and D. We derive analytical expressions for the frequencies and the intensities of all three Rabi oscillation components as functions of Ω_R/D and δ/D, where δis detuning of the driving ac field from the Larmor frequency. When Ω_R>>D, the two lower frequencies approach s=Ω_R, while the upper line approaches s=2Ω_R. Disorder of the local Larmor frequencies leads to a Gaussian broadening of the spectral lines. We calculate corresponding widths for different Ω_R/D and δ/D. Unexpectedly, we find that one of the frequency components exhibits an unusual evolution with Ω_R: its frequency decreases with Ω_R at Ω_R<D. Upon further increase of Ω_R this frequency then passes through a minimum and, eventually, approaches s=Ω_R. Nonmonotonic behavior of the frequencies is accompanied by nonmonotonic behavior of the respective oscillation intensity.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Numerical study of spin-dependent transition rates within pairs of dipolar and strongly exchange coupled spins with (s=1/2) during magnetic resonant excitation

The effect of dipolar and exchange interactions within pairs of paramagnetic electronic states on Pauli-blockade-controlled spin-dependent transport and recombination rates during magnetic resonant spin excitation is studied numerically using the superoperator Liouville-space formalism. The simulations reveal that spin-Rabi nutation induced by magnetic resonance can control transition rates which can be observed experimentally by pulsed electrically (pEDMR) and pulsed optically (pODMR) detected magnetic resonance spectroscopies. When the dipolar coupling exceeds the difference of the pair partners' Zeeman energies, several nutation frequency components can be observed, the most pronounced at sqrt{2} gamma B_1 (gamma is the gyromagnetic ratio, B_1 is the excitation field). Exchange coupling does not significantly affect this nutation component; however, it does strongly influence a low-frequency component < gamma B_1. Thus, pEDMR/pODMR allow the simultaneous identification of exchange and dipolar interaction strengths.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electrically detected spin echoes of donor nuclei in silicon

The ability to probe the spin properties of solid state systems electrically underlies a wide variety of emerging technology. Here, we extend electrical readout of the nuclear spin states of phosphorus donors in silicon to the coherent regime with modified Hahn echo sequences. We find that, whilst the nuclear spins have electrically detected phase coherence times exceeding 2 ms, they are nonetheless limited by the artificially shortened lifetime of the probing donor electron.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

High Field Phenomena of Qubits

Electron and nuclear spins are very promising candidates to serve as quantum bits (qubits) for proposed quantum computers, as the spin degrees of freedom are relatively isolated from their surroundings, and can be coherently manipulated e.g. through pulsed EPR and NMR. For solid state spin systems, impurities in crystals based on carbon and silicon in various forms have been suggested as qubits, and very long relaxation rates have been observed in such systems. We have investigated a variety of these systems at high magnetic fields in our multi-frequency pulsed EPR/ENDOR spectrometer. A high magnetic field leads to large electron spin polarizations at helium temperatures giving rise to various phenomena that are of interest with respect to quantum computing. For example, it allows the initialization of the both the electron spin as well as hyperfine-coupled nuclear spins in a well defined state by combining millimeter and RF radiation; it can increase the T2 relaxation times by eliminating decoherence due to dipolar interaction; and it can lead to new mechanisms for the coherent electrical readout of electron spins. We will show some examples of these and other effects in Si:P, SiC:N, and nitrogen-related centers in diamond.

0 citations0 reviewsNo code linkedOpen access