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G. Gervais

G. Gervais appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.str-elcond-mat.mtrl-scicond-mat.othercond-mat.stat-mechcond-mat.quant-gascond-mat.supr-conquant-ph

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Published work

23 published item(s)

preprint2016arXiv

Dephasing in strongly anisotropic black phosphorus

Weak localization was observed and determined in a black phosphorus (bP) field-effect transistor 65 nm thick. The weak localization behaviour was found to be in excellent agreement with the Hikami-Larkin-Nagaoka model for fields up to 1~T, from which characteristic scattering lengths could be inferred. The dephasing length $L_ϕ$ was found to increase linearly with increasing hole density attaining a maximum value of 55 nm at a hole density of approximately $10^{13} cm^{-2}$ inferred from the Hall effect. The temperature dependence of $L_ϕ$ was also investigated and above 1~K, it was found to decrease weaker than the $L_ϕ\propto T^{-\frac{1}{2}}$ dependence characteristic of electron-electron scattering in the presence of elastic scattering in two dimensions. Rather, the observed power law was found to be close to that observed previously in other quasi-one-dimensional systems such as metallic nanowires and carbon nanotubes. We attribute our result to the crystal structure of bP which host a `puckered' honeycomb lattice forming a strongly anisotropic medium

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preprint2015arXiv

Dual gate black phosphorus velocity modulated transistor

The layered semiconductor black phosphorus has attracted attention as a 2D atomic crystal that can be prepared in ultra-thin layers for operation as field effect transistors. Despite the susceptibility of black phosphorus to photo-oxidation, improvements to the electronic quality of black phosphorus devices has culminated in the observation of the quantum Hall effect. In this work, we demonstrate the room temperature operation of a dual gated black phosphorus transistor operating as a velocity modulated transistor, whereby modification of hole density distribution within a black phosphorus quantum well leads to a two-fold modulation of hole mobility. Simultaneous modulation of Schottky barrier resistance leads to a four-fold modulation of transcon- ductance at a fixed hole density. Our work explicitly demonstrates the critical role of charge density distribution upon charge carrier transport within 2D atomic crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Measurement of Topological Berry Phase in Highly Disordered Graphene

We have observed the quantum Hall effect (QHE) and Shubnikov-de Haas (SdH) oscillations in highly disordered graphene at magnetic fields up to 65 T. Disorder was introduced by hydrogenation of graphene up to a ratio H/C $\approx 0.1\%$. The analysis of SdH oscillations and QHE indicates that the topological part of the Berry phase, proportional to the pseudo-spin winding number, is robust against introduction of disorder by hydrogenation in large scale graphene.

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preprint2015arXiv

Mechanical Flip-Chip for Ultra-High Electron Mobility Devices

Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, for example, quantum point contacts (QPC), electron interferometers and quantum dots. To fabricate these gates, processing is usually performed on the 2DEG material, which is in many cases detrimental to its electron mobility. Here we propose an alternative process which does not require any processing of the 2DEG material other than for the ohmic contacts. This approach relies on processing a separate wafer that is then mechanically mounted on the 2DEG material in a flip-chip fashion. This technique proved successful to fabricate quantum point contacts on both GaAs/AlGaAs materials with both moderate and ultra-high electron mobility.

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preprint2015arXiv

Second Landau Level Fractional Quantum Hall Effects in the Corbino Geometry

For certain measurements, the Corbino geometry has a distinct advantage over the Hall and van der Pauw geometries, in that it provides a direct probe of the bulk 2DEG without complications due to edge effects. This may be important in enabling detection of the non-Abelian entropy of the 5/2 fractional quantum Hall state via bulk thermodynamic measurements. We report the successful fabrication and measurement of a Corbino-geometry sample in an ultra-high mobility GaAs heterostructure, with a focus on transport in the second and higher Landau levels. In particular, we report activation energy gaps of fractional quantum Hall states, with all edge effects ruled out, and extrapolate the conductivity prefactor from the Arrhenius fits. Our results show that activated transport in the second Landau level remains poorly understood. The development of this Corbino device opens the possibility to study the bulk of the 5/2 state using techniques not possible in other geometries.

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preprint2014arXiv

1D-1D Coulomb Drag Signature of a Luttinger Liquid

We report Coulomb drag measurements between vertically-integrated quantum wires separated by a barrier only 15 nm wide. The temperature dependence of the drag resistance is measured in the true one-dimensional (1D) regime where both wires have less than one 1D subband occupied. As a function of temperature, an upturn in the drag resistance is observed in three distinct devices at a temperature $T^* \sim 1.6$ K. This crossover in Coulomb drag behaviour is consistent with Tomonaga-Luttinger liquid models for the 1D-1D drag between quantum wires.

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preprint2014arXiv

Berry Phase in Cuprate Superconductors

Geometrical Berry phase is recognized as having profound implications for the properties of electronic systems. Over the last decade, Berry phase has been essential to our understanding of new materials, including graphene and topological insulators. The Berry phase can be accessed via its contribution to the phase mismatch in quantum oscillation experiments, where electrons accumulate a phase as they traverse closed cyclotron orbits in momentum space. The high-temperature cuprate superconductors are a class of materials where the Berry phase is thus far unknown despite the large body of existing quantum oscillations data. In this report we present a systematic Berry phase analysis of Shubnikov - de Haas measurements on the hole-doped cuprates YBa$_2$Cu$_3$O$_{y}$, YBa$_2$Cu$_4$O$_8$, HgBa$_2$CuO$_{4 + δ}$, and the electron-doped cuprate Nd$_{2-x}$Ce$_x$CuO$_4$. For the hole-doped materials, a trivial Berry phase of 0 mod $2π$ is systematically observed whereas the electron-doped Nd$_{2-x}$Ce$_x$CuO$_4$ exhibits a significant non-zero Berry phase. These observations set constraints on the nature of the high-field normal state of the cuprates and points towards contrasting behaviour between hole-doped and electron-doped materials. We discuss this difference in light of recent developments related to charge density-wave and broken time-reversal symmetry states.

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preprint2014arXiv

Critical Flow and Dissipation in a Quasi-One-Dimensional Superfluid

In one of the most celebrated examples of the theory of universal critical phenomena, the phase transition to the superfluid state of $^{4}$He belongs to the same three dimensional $\mathrm{O}(2)$ universality class as the onset of ferromagnetism in a lattice of classical spins with $XY$ symmetry. Below the transition, the superfluid density $ρ_s$ and superfluid velocity $v_s$ increase as power laws of temperature described by a universal critical exponent constrained to be equal by scale invariance. As the dimensionality is reduced towards one dimension (1D), it is expected that enhanced thermal and quantum fluctuations preclude long-range order, thereby inhibiting superfluidity. We have measured the flow rate of liquid helium and deduced its superfluid velocity in a capillary flow experiment occurring in single $30~$nm long nanopores with radii ranging down from 20~nm to 3~nm. As the pore size is reduced towards the 1D limit, we observe: {\it i)} a suppression of the pressure dependence of the superfluid velocity; {\it ii)} a temperature dependence of $v_{s}$ that surprisingly can be well-fitted by a powerlaw with a single exponent over a broad range of temperatures; and {\it iii)} decreasing critical velocities as a function of radius for channel sizes below $R \simeq 20$~nm, in stark contrast with what is observed in micron sized channels. We interpret these deviations from bulk behaviour as signaling the crossover to a quasi-1D state whereby the size of a critical topological defect is cut off by the channel radius.

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preprint2014arXiv

Two-Dimensional Magnetotransport in a Black Phosphorus Naked Quantum Well

Black phosphorus (bP) is the second known elemental allotrope with a layered crystal structure that can be mechanically exfoliated down to atomic layer thickness. We have fabricated bP naked quantum wells in a back-gated field effect transistor geometry with bP thicknesses ranging from $6\pm1$ nm to $47\pm1$ nm. Using an encapsulating polymer superstrate, we have suppressed bP oxidation and have observed field effect mobilities up to 600 cm$^2$/Vs and on/off current ratios exceeding $10^5$. Importantly, Shubnikov-de Haas (SdH) oscillations observed in magnetotransport measurements up to 35 T reveal the presence of a 2-D hole gas with Schrödinger fermion character in an accumulation layer at the bP/oxide interface. Our work demonstrates that 2-D electronic structure and 2-D atomic structure are independent. 2-D carrier confinement can be achieved in layered semiconducting materials without necessarily approaching atomic layer thickness, advantageous for materials that become increasingly reactive in the few-layer limit such as bP.

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preprint2013arXiv

Local Superfluidity at the Nanoscale

We have performed quantum Monte Carlo simulations measuring the finite size and temperature superfluid response of helium-4 to the linear and rotational motion of the walls of a nanopore. Within the two-fluid model, the portion of the normal liquid dragged along with the boundaries is dependent on the type of motion and the resulting anisotropic superfluid density saturates far below unity at T=0.5 K. The origin of the saturation is uncovered by computing the spatial distribution of superfluidity, with only the core of the nanopore exhibiting any evidence of phase coherence. The superfluid core displays scaling behavior consistent with Luttinger liquid theory, thereby providing an experimental test for the emergence of a one dimensional quantum liquid.

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preprint2013arXiv

McMillan-Rowell Oscillations in a Low Spin-Orbit SNS Semiconducting Junction

The electronic transport properties of an SNS junction formed by an InN nanowire (N) and Al contacts (S) with a superconducting transition temperature T_c ~ 0.92 K were investigated. As a function of dc bias, superconducting quasiparticle transport resonance peaks at E=2Δwere observed, in agreement with BCS theory with 2Δ(T=0) \equiv Δ_0=275\mueV. Several additional transport resonances scaling linearly in energy were observed at high-bias above 2Δ, up to E\simeq 15Δ_0, consistent with McMillan-Rowell oscillations. The persistence of McMillan-Rowell oscillations at high-bias and under applied magnetic field were investigated.

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preprint2013arXiv

Quantum Hall Effect in Hydrogenated Graphene

The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 $\mathrm{cm^{2}/V\cdot s}$ and corresponding Ioffe-Regel disorder parameter $(k_{F}λ)^{-1}\gg1$. In zero magnetic field and low temperatures, the hydrogenated graphene is insulating with a two-point resistance of order of $250 h/e^2$. Application of a strong magnetic field generates a negative colossal magnetoresistance, with the two-point resistance saturating within 0.5% of $h/2e^{2}$ at 45T. Our observations are consistent with the opening of an impurity-induced gap in the density of states of graphene. The interplay between electron localization by defect scattering and magnetic confinement in two-dimensional atomic crystals is discussed.

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preprint2012arXiv

Positive and negative Coulomb drag in vertically integrated one-dimensional quantum wires

Electron interactions in and between wires become increasingly complex and important as circuits are scaled to nanometre sizes, or employ reduced-dimensional conductors like carbon nanotubes, nanowires and gated high mobility 2D electron systems. This is because the screening of the long-range Coulomb potential of individual carriers is weakened in these systems, which can lead to phenomenon such as Coulomb drag: a current in one wire induces a voltage in a second wire through Coulomb interactions alone. Previous experiments have observed electron drag in wires separated by a soft electrostatic barrier $\gtrsim$ 80 nm. Here, we measure both positive and negative drag between adjacent vertical quantum wires that are separated by $\sim$ 15 nm and have independent contacts, which allows their electron densities to be tuned independently. We map out the drag signal versus the number of electron subbands occupied in each wire, and interpret the results in terms of momentum-transfer and charge-fluctuation induced transport models. For wires of significantly different subband occupancies, the positive drag effect can be as large as 25%.

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preprint2012arXiv

Resistivity saturation in a weakly interacting 2D Fermi liquid at intermediate temperatures

We report a highly unusual temperature dependence in the magnetoresistance of a weakly interacting high mobility 2D electron gas (2DEG) under a parallel magnetic field and when the current is perpendicular to the field. While the linear temperature dependence below 10 K and the exponential temperature dependence above 40 K agree with existing theory of electron-phonon scattering, a field induced resistivity saturation behaviour characterized by an almost complete suppression of the temperature dependence is observed from approximately 20 to 40 K, which is in sharp contrast to the phenomenology observed when the current is parallel to the field. Possible origins of this intriguing intermediate temperature phenomenon are discussed.

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preprint2011arXiv

Hydrodynamics of Superfluid Helium in a Single Nanohole

The flow of liquid helium through a single nanohole with radius smaller than 25 nm was studied for the first time. Mass flow was induced by applying a pressure difference of up to 1.4 bar across a 50 nm thick Si3N4 membrane and was measured directly by means of mass spectrometry. In liquid He I, we experimentally show that the fluid is not clamped by the short pipe with diameter-to-length ratio D/L~1, despite the small diameter of the nanohole. This viscous flow is quantitatively understood by making use of a model of flow in short pipes. In liquid He II, a two-fluid model for mass flow is used to extract the superfluid velocity in the nanohole for different pressure heads at temperatures close to the superfluid transition. These velocities compare well to existing data for the critical superflow of liquid helium in other confined systems.

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preprint2011arXiv

Quantum-Classical Crossover and Apparent Metal-Insulator Transition in a Weakly Interacting 2D Fermi Liquid

We report the observation of a parallel magnetic field induced metal-insulator transition (MIT) in a high-mobility two-dimensional electron gas (2DEG) for which spin and localization physics most likely play no major role. The high-mobility metallic phase at low field is consistent with the established Fermi liquid transport theory including phonon scattering, whereas the insulating phase at higher field shows a large negative temperature dependence at resistances much smaller than the quantum of resistance, $h/e^2$. We argue that this observation is a direct manifestation of a quantum-classical crossover arising predominantly from the magneto-orbital coupling between the finite width of the 2DEG and the in-plane magnetic field.

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preprint2010arXiv

Adiabatic Cooling with Non-Abelian Anyons

We show in this Letter that the ground state degeneracy associated with the presence of non-Abelian anyons can be probed by using an adiabatic cooling process based on the non-Abelian entropy. In particular, we show that when the number of such anyons is increased adiabatically at sufficiently low temperatures, the non-Abelian liquid undergoes cooling, whereas heating occurs in the Abelian case. Estimates are provided for the cooling power produced by the non-Abelian anyon refrigerator, and its implementation in non-Abelian fractional quantum Hall liquids is discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Colossal magnetoresistance in an ultra-clean weakly interacting 2D Fermi liquid

We report the observation of a new phenomenon of colossal magnetoresistance in a 40 nm wide GaAs quantum well in the presence of an external magnetic field applied parallel to the high-mobility 2D electron layer. In a strong magnetic field, the magnetoresistance is observed to increase by a factor of ~300 from 0 to 45T without the system undergoing any metal-insulator transition. We discuss how this colossal magnetoresistance effect cannot be attributed to the spin degree-of-freedom or localization physics, but most likely emanates from strong magneto-orbital coupling between the two-dimensional electron gas and the magnetic field. Our observation is consistent with a field-induced 2D-to-3D transition in the confined electronic system.

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preprint2010arXiv

Energy Gap and Spin Polarization in the 5/2 Fractional Quantum Hall Effect

We consider the issue of the appropriate underlying wavefunction describing the enigmatic 5/2 fractional quantum Hall effect (FQHE), the only even denominator FQHE unambiguously observed in a single layer two dimensional (2D) electron system. Using experimental transport data and theoretical analysis, we argue that the possibility of the experimental 5/2 FQH state being not fully spin-polarized cannot be ruled out. We also establish that the parallel field-induced destruction of the 5/2 FQHE arises primarily from the enhancement of effective disorder by the parallel field with the Zeeman energy playing an important quantitative role.

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preprint2010arXiv

Low Temperature Electrostatic Force Microscopy of a Deep Two Dimensional Electron Gas using a Quartz Tuning Fork

Using an ultra-low temperature, high magnetic field scanning probe microscope, we have measured electric potentials of a deeply buried two dimensional electron gas (2DEG). Relying on the capacitive coupling between the 2DEG and a resonant tip/cantilever structure, we can extract electrostatic potential information of the 2DEG from the dynamics of the oscillator. We present measurements using a quartz tuning fork oscillator and a 2DEG with a cleaved edge overgrowth structure. The sensitivity of the quartz tuning fork as force sensor is demonstrated by observation of Shubnikov de Haas oscillations at a large tip-2DEG separation distance of more than 500 nm.

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preprint2010arXiv

Scattering Mechanism in Modulation-Doped Shallow Two-Dimensional Electron Gases

We report on a systematic investigation of the dominant scattering mechanism in shallow two-dimensional electron gases (2DEGs) formed in modulation-doped GaAs/Al_{x}Ga_{1-x}As heterostructures. The power-law exponent of the electron mobility versus density, mu \propto n^{alpha}, is extracted as a function of the 2DEG's depth. When shallower than 130 nm from the surface, the power-law exponent of the 2DEG, as well as the mobility, drops from alpha \simeq 1.65 (130 nm deep) to alpha \simeq 1.3 (60 nm deep). Our results for shallow 2DEGs are consistent with theoretical expectations for scattering by remote dopants, in contrast to the mobility-limiting background charged impurities of deeper heterostructures.

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preprint2009arXiv

Current-induced nuclear-spin activation in a two-dimensional electron gas

Electrically detected nuclear magnetic resonance was studied in detail in a two-dimensional electron gas as a function of current bias and temperature. We show that applying a relatively modest dc-current bias, I_dc ~ 0.5 microAmps, can induce a re-entrant and even enhanced nuclear spin signal compared with the signal obtained under similar thermal equilibrium conditions at zero current bias. Our observations suggest that dynamic nuclear spin polarization by small current flow is possible in a two-dimensional electron gas, allowing for easy manipulation of the nuclear spin by simple switching of a dc current.

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preprint2009arXiv

Flow Conductance of a Single Nanohole

The mass flow conductance of single nanoholes with diameter ranging from 75 to 100 nm was measured using mass spectrometry. For all nanoholes, a smooth crossover is observed between single-particle statistical flow (effusion) and the collective viscous flow emanating from the formation of a continuum. This crossover is shown to occur when the gas mean free path matches the size of the nanohole diameter. As a consequence of the pinhole geometry, the breakdown of the Poiseuille approximation is observed in the power-law temperature exponent of the measured conductance.

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