Researcher profile

T. Szkopek

T. Szkopek contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2013arXiv

McMillan-Rowell Oscillations in a Low Spin-Orbit SNS Semiconducting Junction

The electronic transport properties of an SNS junction formed by an InN nanowire (N) and Al contacts (S) with a superconducting transition temperature T_c ~ 0.92 K were investigated. As a function of dc bias, superconducting quasiparticle transport resonance peaks at E=2Δwere observed, in agreement with BCS theory with 2Δ(T=0) \equiv Δ_0=275\mueV. Several additional transport resonances scaling linearly in energy were observed at high-bias above 2Δ, up to E\simeq 15Δ_0, consistent with McMillan-Rowell oscillations. The persistence of McMillan-Rowell oscillations at high-bias and under applied magnetic field were investigated.

preprint2013arXiv

Quantum Hall Effect in Hydrogenated Graphene

The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 $\mathrm{cm^{2}/V\cdot s}$ and corresponding Ioffe-Regel disorder parameter $(k_{F}λ)^{-1}\gg1$. In zero magnetic field and low temperatures, the hydrogenated graphene is insulating with a two-point resistance of order of $250 h/e^2$. Application of a strong magnetic field generates a negative colossal magnetoresistance, with the two-point resistance saturating within 0.5% of $h/2e^{2}$ at 45T. Our observations are consistent with the opening of an impurity-induced gap in the density of states of graphene. The interplay between electron localization by defect scattering and magnetic confinement in two-dimensional atomic crystals is discussed.