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T. Szkopek

T. Szkopek appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

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Published work

8 published item(s)

preprint2016arXiv

Dephasing in strongly anisotropic black phosphorus

Weak localization was observed and determined in a black phosphorus (bP) field-effect transistor 65 nm thick. The weak localization behaviour was found to be in excellent agreement with the Hikami-Larkin-Nagaoka model for fields up to 1~T, from which characteristic scattering lengths could be inferred. The dephasing length $L_ϕ$ was found to increase linearly with increasing hole density attaining a maximum value of 55 nm at a hole density of approximately $10^{13} cm^{-2}$ inferred from the Hall effect. The temperature dependence of $L_ϕ$ was also investigated and above 1~K, it was found to decrease weaker than the $L_ϕ\propto T^{-\frac{1}{2}}$ dependence characteristic of electron-electron scattering in the presence of elastic scattering in two dimensions. Rather, the observed power law was found to be close to that observed previously in other quasi-one-dimensional systems such as metallic nanowires and carbon nanotubes. We attribute our result to the crystal structure of bP which host a `puckered' honeycomb lattice forming a strongly anisotropic medium

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Suspended graphene variable capacitor

The tuning of electrical circuit resonance with a variable capacitor, or varactor, finds wide application with the most important being wireless telecommunication. We demonstrate an electromechanical graphene varactor, a variable capacitor wherein the capacitance is tuned by voltage controlled deflection of a dense array of suspended graphene membranes. The low flexural rigidity of graphene monolayers is exploited to achieve low actuation voltage in an ultra-thin structure. Large arrays comprising thousands of suspensions were fabricated to give a tunable capacitance of over 10 pF/mm$^2$, higher than that achieved by traditional micro-electromechanical system (MEMS) technologies. A capacitance tuning of 55% was achieved with a 10 V actuating voltage, exceeding that of conventional MEMS parallel plate capacitors. Capacitor behavior was investigated experimentally, and described by a simple theoretical model. Mechanical properties of the graphene membranes were measured independently using Atomic Force Microscopy (AFM). Increased graphene conductivity will enable the application of the compact graphene varactor to radio frequency systems.

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preprint2015arXiv

Dual gate black phosphorus velocity modulated transistor

The layered semiconductor black phosphorus has attracted attention as a 2D atomic crystal that can be prepared in ultra-thin layers for operation as field effect transistors. Despite the susceptibility of black phosphorus to photo-oxidation, improvements to the electronic quality of black phosphorus devices has culminated in the observation of the quantum Hall effect. In this work, we demonstrate the room temperature operation of a dual gated black phosphorus transistor operating as a velocity modulated transistor, whereby modification of hole density distribution within a black phosphorus quantum well leads to a two-fold modulation of hole mobility. Simultaneous modulation of Schottky barrier resistance leads to a four-fold modulation of transcon- ductance at a fixed hole density. Our work explicitly demonstrates the critical role of charge density distribution upon charge carrier transport within 2D atomic crystals.

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preprint2015arXiv

Measurement of Topological Berry Phase in Highly Disordered Graphene

We have observed the quantum Hall effect (QHE) and Shubnikov-de Haas (SdH) oscillations in highly disordered graphene at magnetic fields up to 65 T. Disorder was introduced by hydrogenation of graphene up to a ratio H/C $\approx 0.1\%$. The analysis of SdH oscillations and QHE indicates that the topological part of the Berry phase, proportional to the pseudo-spin winding number, is robust against introduction of disorder by hydrogenation in large scale graphene.

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preprint2014arXiv

Berry Phase in Cuprate Superconductors

Geometrical Berry phase is recognized as having profound implications for the properties of electronic systems. Over the last decade, Berry phase has been essential to our understanding of new materials, including graphene and topological insulators. The Berry phase can be accessed via its contribution to the phase mismatch in quantum oscillation experiments, where electrons accumulate a phase as they traverse closed cyclotron orbits in momentum space. The high-temperature cuprate superconductors are a class of materials where the Berry phase is thus far unknown despite the large body of existing quantum oscillations data. In this report we present a systematic Berry phase analysis of Shubnikov - de Haas measurements on the hole-doped cuprates YBa$_2$Cu$_3$O$_{y}$, YBa$_2$Cu$_4$O$_8$, HgBa$_2$CuO$_{4 + δ}$, and the electron-doped cuprate Nd$_{2-x}$Ce$_x$CuO$_4$. For the hole-doped materials, a trivial Berry phase of 0 mod $2π$ is systematically observed whereas the electron-doped Nd$_{2-x}$Ce$_x$CuO$_4$ exhibits a significant non-zero Berry phase. These observations set constraints on the nature of the high-field normal state of the cuprates and points towards contrasting behaviour between hole-doped and electron-doped materials. We discuss this difference in light of recent developments related to charge density-wave and broken time-reversal symmetry states.

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preprint2014arXiv

Two-Dimensional Magnetotransport in a Black Phosphorus Naked Quantum Well

Black phosphorus (bP) is the second known elemental allotrope with a layered crystal structure that can be mechanically exfoliated down to atomic layer thickness. We have fabricated bP naked quantum wells in a back-gated field effect transistor geometry with bP thicknesses ranging from $6\pm1$ nm to $47\pm1$ nm. Using an encapsulating polymer superstrate, we have suppressed bP oxidation and have observed field effect mobilities up to 600 cm$^2$/Vs and on/off current ratios exceeding $10^5$. Importantly, Shubnikov-de Haas (SdH) oscillations observed in magnetotransport measurements up to 35 T reveal the presence of a 2-D hole gas with Schrödinger fermion character in an accumulation layer at the bP/oxide interface. Our work demonstrates that 2-D electronic structure and 2-D atomic structure are independent. 2-D carrier confinement can be achieved in layered semiconducting materials without necessarily approaching atomic layer thickness, advantageous for materials that become increasingly reactive in the few-layer limit such as bP.

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preprint2013arXiv

McMillan-Rowell Oscillations in a Low Spin-Orbit SNS Semiconducting Junction

The electronic transport properties of an SNS junction formed by an InN nanowire (N) and Al contacts (S) with a superconducting transition temperature T_c ~ 0.92 K were investigated. As a function of dc bias, superconducting quasiparticle transport resonance peaks at E=2Δwere observed, in agreement with BCS theory with 2Δ(T=0) \equiv Δ_0=275\mueV. Several additional transport resonances scaling linearly in energy were observed at high-bias above 2Δ, up to E\simeq 15Δ_0, consistent with McMillan-Rowell oscillations. The persistence of McMillan-Rowell oscillations at high-bias and under applied magnetic field were investigated.

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preprint2013arXiv

Quantum Hall Effect in Hydrogenated Graphene

The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 $\mathrm{cm^{2}/V\cdot s}$ and corresponding Ioffe-Regel disorder parameter $(k_{F}λ)^{-1}\gg1$. In zero magnetic field and low temperatures, the hydrogenated graphene is insulating with a two-point resistance of order of $250 h/e^2$. Application of a strong magnetic field generates a negative colossal magnetoresistance, with the two-point resistance saturating within 0.5% of $h/2e^{2}$ at 45T. Our observations are consistent with the opening of an impurity-induced gap in the density of states of graphene. The interplay between electron localization by defect scattering and magnetic confinement in two-dimensional atomic crystals is discussed.

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