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Colossal magnetoresistance in an ultra-clean weakly interacting 2D Fermi liquid

We report the observation of a new phenomenon of colossal magnetoresistance in a 40 nm wide GaAs quantum well in the presence of an external magnetic field applied parallel to the high-mobility 2D electron layer. In a strong magnetic field, the magnetoresistance is observed to increase by a factor of ~300 from 0 to 45T without the system undergoing any metal-insulator transition. We discuss how this colossal magnetoresistance effect cannot be attributed to the spin degree-of-freedom or localization physics, but most likely emanates from strong magneto-orbital coupling between the two-dimensional electron gas and the magnetic field. Our observation is consistent with a field-induced 2D-to-3D transition in the confined electronic system.

preprint2010arXivOpen access
Xiaoqing ZhouB. A. PiotM. BoninL. W. EngelS. Das SarmaG. GervaisL. N. PfeifferK. W. West
cond-mat.mes-hallcond-mat.str-el
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Open access8 authors2 topics
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Xiaoqing ZhouB. A. PiotM. BoninL. W. EngelS. Das SarmaG. GervaisL. N. PfeifferK. W. West

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