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Fuqiang Huang

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cond-mat.supr-con cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el

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preprint2023arXiv

Giant Nernst effect in the crossover between Fermi liquid and strange metal

The strange-metal state is a crucial problem in condensed matter physics highlighted by its ubiquity in almost all major correlated systems[1-7]. Its understanding could provide important insight into high-Tc superconductivity[2] and quantum criticality[8]. However, with the Fermi liquid theory failing in strange metals, understanding the highly unconventional behaviors has been a long-standing challenge. Fundamental aspects of strange metals remain elusive, including the nature of their charge carriers[1]. Here, we report the observation of a giant Nernst response in the strange-metal state in a two-dimensional superconductor 2M-WS2. A giant Nernst coefficient comparable to the vortex Nernst signal in superconducting cuprates, and its high sensitivity to carrier mobility, are found when the system enters the strange-metal state from the Fermi liquid state. The temperature and magnetic field dependence of the giant Nernst peak rule out the relevance of both Landau quasiparticles and superconductivity. Instead, the giant Nernst peak at the crossover indicates a dramatic change in carrier entropy when entering the strange-metal state. The presence of such an anomalous Nernst response is further confirmed in other iconic strange metals, suggesting its universality and places stringent experimental constraints on the mechanism of strange metals.

preprint2016arXiv

Growth and characterization of CaFe$_{1-x}$Co$_x$AsF single crystals by CaAs flux method

Millimeter sized single crystals of CaFe$_{1-x}$Co$_x$AsF were grown using a self-flux method. It is found that high-quality single crystals can be grown from three approaches with different initial raw materials. The chemical compositions and crystal structure were characterized carefully. The c-axis lattice constant is suppressed by the Co substitution. Superconductivity with the critical transition $T_c$ as high as 21 K was confirmed by both the resistivity and magnetic susceptibility measurements in the sample with $x$ = 0.12. Moreover, it is found that $T_c$ can be enhanced for about 1 K under the very small hydrostatic pressure of 0.22 GPa, which is more quickly than that reported in the polycrystalline samples. Our results is a promotion for the physical investigations of 1111 phase iron-pnictide superconductors.

preprint2016arXiv

The effects of electron correlation and spin-orbit coupling in the isovalent Pd-doped superconductor SrPt$_3$P

We present a systematical study on the roles of electron correlation and spin-orbit coupling in the isovalent Pd-doped superconductor SrPt$_3$P. By using solid state reaction method, we fabricated the strong spin-orbit coupling superconductors Sr(Pt$_{1-x}$Pd$_x$)$_3$P with strong electron correlated Pd dopant of the $4d$ orbital. As increasing the isovalent Pd concentrations without introducing any extra electron/hole carriers, the superconducting transition temperature $T_c$ decreases monotonously, which suggests the existence of competition between spin-orbit coupling and electron correlation in the superconducting state. In addition, the electronic band structure calculations demonstrate that the strength of electron susceptibility is suppressed gradually by the Pd dopant suggesting the incompatible relation between spin-orbit coupling and electron correlation, which is also consistent with experimental measurements. Our results provide significant insights in the natures of the interplay between the spin-orbit coupling and the electron correlation in superconductivity, and may pave a way for understanding the mechanism of superconductivity in this 5d-metal-based compound.

preprint2015arXiv

Growth and Characterization of Millimeter-sized Single Crystals of CaFeAsF

High-quality and sizable single crystals are crucial for studying the intrinsic properties of unconventional superconductors, which are lacking in the 1111 phase of the Fe-based superconductors. Here we report the successful growth of CaFeAsF single crystals with the sizes of 1-2 mm using the self-flux method. Owning to the availability of the high-quality single crystals, the structure and transport properties were investigated with a high reliability. The structure was refined by using the single-crystal x-ray diffraction data, which confirms the reports earlier on the basis of powder data. A clear anomaly associated with the structural transition was observed at 121 K from the resistivity, magnetoresistance, and magnetic susceptibility measurements. Another kink-feature at 110 K, most likely an indication of the antiferromagnetic transition, was also detected in the resistivity data. Our results supply a basis to propel the physical investigations on the 1111 phase of the Fe-based superconductors.

preprint2015arXiv

Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride

The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics. Traditionally, graphene domains grown on dielectrics are typically only ~1 nm with a growth rate of ~1 nm/min or less, the main reason is the lack of a catalyst. Here we show that silane, serving as a gaseous catalyst, is able to boost the graphene growth rate to ~1 um/min, thereby promoting graphene domains up to 20 um in size to be synthesized via chemical vapor deposition on hexagonal boron nitride. Hall measurements show that the mobility of the sample reaches 20,000 cm2/Vs at room temperature, which is among the best for CVD-grown graphene. Combining the advantages of both catalytic CVD and the ultra-flat dielectric substrate, gaseous catalyst-assisted CVD paves the way for synthesizing high-quality graphene for device applications while avoiding the transfer process.

preprint2014arXiv

Synthesis, Structural, and Transport Properties of Cr-doped BaTi_2As_2O

The interplay between unconventional superconductivity and the ordering of charge/spin density wave is one of the most vital issues in both condensed matter physics and material science. The Ti-based compound BaTi_2As_2O, which can be seen as the parent phase of superconducting BaTi_2Sb_2O, has a layered structure with a space group P4/mmm, similar to that of cuprate and iron-based superconductors. This material exhibits a charge density wave (CDW) ordering transition revealed by an anomaly at around 200 K in transport measurements. Here, we report the synthesis and systematical study of the physical properties in Cr-doped BaTi_{2-x}Cr_xAs_2O (x = 0 - 0.154), and demonstrate that the transition temperature of the CDW ordering is suppressed gradually by the doped Cr element. The magnetization measurements confirm the evolution of the CDW ordering transition. These observed behaviors are similar to that observed in iron-based superconductors, but no superconductivity emerges down to 2 K. In addition, the first-principles calculations are also carried out for well-understanding the nature of experimental observations.

preprint2013arXiv

Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition

To grow precisely aligned graphene on h-BN without metal catalyst is extremely important, which allows for intriguing physical properties and devices of graphene/h-BN hetero-structure to be studied in a controllable manner. In this report, such hetero-structures were fabricated and investigated by atomic resolution scanning probe microscopy. Moirre patterns are observed and the sensitivity of moirre interferometry proves that the graphene grains can align precisely with the underlying h-BN lattice within an error of less than 0.05 degree. The occurrence of moirre pattern clearly indicates that the graphene locks into h-BN via van der Waals epitaxy with its interfacial stress greatly released. It is worthy to note that the edges of the graphene grains are primarily oriented along the armchair direction. The field effect mobility in such graphene flakes exceeds 20,000 cm2/V.s at ambient condition. This work opens the door of atomic engineering of graphene on h-BN, and sheds light on fundamental research as well as electronic applications based on graphene/h-BN hetero-structure.