Researcher profile

Fuqiang Huang

Fuqiang Huang contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2023arXiv

Giant Nernst effect in the crossover between Fermi liquid and strange metal

The strange-metal state is a crucial problem in condensed matter physics highlighted by its ubiquity in almost all major correlated systems[1-7]. Its understanding could provide important insight into high-Tc superconductivity[2] and quantum criticality[8]. However, with the Fermi liquid theory failing in strange metals, understanding the highly unconventional behaviors has been a long-standing challenge. Fundamental aspects of strange metals remain elusive, including the nature of their charge carriers[1]. Here, we report the observation of a giant Nernst response in the strange-metal state in a two-dimensional superconductor 2M-WS2. A giant Nernst coefficient comparable to the vortex Nernst signal in superconducting cuprates, and its high sensitivity to carrier mobility, are found when the system enters the strange-metal state from the Fermi liquid state. The temperature and magnetic field dependence of the giant Nernst peak rule out the relevance of both Landau quasiparticles and superconductivity. Instead, the giant Nernst peak at the crossover indicates a dramatic change in carrier entropy when entering the strange-metal state. The presence of such an anomalous Nernst response is further confirmed in other iconic strange metals, suggesting its universality and places stringent experimental constraints on the mechanism of strange metals.

preprint2013arXiv

Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition

To grow precisely aligned graphene on h-BN without metal catalyst is extremely important, which allows for intriguing physical properties and devices of graphene/h-BN hetero-structure to be studied in a controllable manner. In this report, such hetero-structures were fabricated and investigated by atomic resolution scanning probe microscopy. Moirre patterns are observed and the sensitivity of moirre interferometry proves that the graphene grains can align precisely with the underlying h-BN lattice within an error of less than 0.05 degree. The occurrence of moirre pattern clearly indicates that the graphene locks into h-BN via van der Waals epitaxy with its interfacial stress greatly released. It is worthy to note that the edges of the graphene grains are primarily oriented along the armchair direction. The field effect mobility in such graphene flakes exceeds 20,000 cm2/V.s at ambient condition. This work opens the door of atomic engineering of graphene on h-BN, and sheds light on fundamental research as well as electronic applications based on graphene/h-BN hetero-structure.