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Researcher profile

Fumiyuki Ishii

Fumiyuki Ishii contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elphysics.comp-ph

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Published work

6 published item(s)

preprint2022arXiv

First-principles calculation of anomalous Hall and Nernst conductivity by local Berry phase

In this study, we implemented a finite-difference algorithm for computing anomalous Hall and Nernst conductivity. Based on the expression to evaluate the Berry curvature in an insulating system [J. Phys. Soc. Jpn. 74 1674(2005)], we extended the methods to a metallic system. We calculated anomalous Hall conductivity and Nernst conductivity in a two-dimensional ferromagnetic material FeCl$_2$ and three-dimensional ferromagnetic transition metals bcc-Fe, hcp-Co, and fcc-Ni. Our results are comparable to previously reported results computed by Kubo-formula or Wannier representation. To evaluate anomalous Nernst coefficients, the detailed Fermi-energy dependence of the anomalous Hall conductivity is required. Nonetheless, previous methods based on Wannier representation or Kubo-formula have numerical instability due to the ${\boldsymbol k}$-space Dirac monopole. The present method will open an efficient thermoelectric material design based on the high-throughput first-principles screening.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

First-principles LCPAO Approach for Insulators under Finite Electric Field

We propose a linear-combination-of-pseudo-atomic-orbitals scheme for a finite electric field method based on the modern theory of polarization. We derive the matrix elements of the effective potential for the field and the corresponding terms of the forces on atoms. In addition, we successfully evaluated the dielectric constants and Born effective charges of typical semiconducting and insulating materials. Our formalism will aid in the study of materials under electric fields.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Ambient pressure Dirac electron system in quasi-two-dimensional molecular conductor $α$-(BETS)$_2$I$_3$

We investigated the precise crystal structures and electronic states in a quasi-two-dimensional molecular conductor $α$-(BETS)$_2$I$_3$ at ambient pressure. The electronic resistivity of this molecular solid shows metal-to-insulator (MI) crossover at $T_{MI}$=50 K. Our x-ray diffraction and $^{13}$C nuclear magnetic resonance experiments revealed that $α$-(BETS)$_2$I$_3$ maintains the inversion symmetry below $T_{MI}$. First-principles calculations found a pair of anisotropic Dirac cones at a general k-point, with the degenerate contact points at the Fermi level. The origin of the insulating state in this system is a small energy gap of ~2 meV opened by the spin-orbit interaction. The Z$_2$ topological invariants indicate that this system is a weak topological insulator. Our results suggest that $α$-(BETS)$_2$I$_3$ is a promising material for studying the bulk Dirac electron system in two dimensions.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Large band splitting with tunable spin polarization in two-dimensional ferroelectric GaXY (X= Se, Te; Y= Cl, Br, I) family

It has been generally accepted that the spin-orbit coupling effect in noncentrosymmetric materials leads to the band splitting and non-trivial spin polarization in the momentum space. However, in some cases, zero net spin polarization in the split bands may occurs, dubbed as the band splitting with vanishing spin polarization (BSVSP) effect, protected by non-pseudo-polar point group symmetry of the wave vector in the first Brillouin zone [Liu et. al., Nat. Commun. \textbf{10}, 5144 (2019)]. In this paper, by using first-principles calculations, we show that the BSVSP effect emerges in two-dimensional (2D) nonsymmorphic Ga$XY$ ($X$= Se, Te; $Y$= Cl, Br, I) family, a new class of 2D materials having in-plane ferroelectricity. Taking the GaTeCl monolayer as a representative example, we observe the BSVSP effect in the split bands along the $X-M$ line located in the proximity of the conduction band minimum. By using $\vec{k}\cdot\vec{p}$ Hamiltonian derived based on the symmetry analysis, we clarify that such effect is originated from the cancellation of the local spin polarization, enforced by non-pseudo-polar $C_{2v}$ point group symmetry of the wave vector along the $X-M$ line. Importantly, we find that the spin polarization can be effectively induced by applying an external out-of-plane electric field, indicating that an electrically tunable spin polarization for spintronic applications is plausible.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Anomalous transport due to Weyl fermions in the chiral antiferromagnets Mn$_3$$X$, $X$ = Sn, Ge

The recent discoveries of strikingly large zero-field Hall and Nernst effects in antiferromagnets Mn$_3$$X$, ($X$ = Sn, Ge) have brought the study of magnetic topological states to the forefront of condensed matter research and technological innovation. These effects are considered fingerprints of Weyl nodes residing near the Fermi energy, promoting Mn$_3$$X$, ($X$ = Sn, Ge) as a fascinating platform to explore the elusive magnetic Weyl fermions. In this review, we provide recent updates on the insights drawn from experimental and theoretical studies of Mn$_3$$X$, ($X$ = Sn, Ge) by combining previous reports with our new, comprehensive set of transport measurements of high-quality Mn$_3$Sn and Mn$_3$Ge single crystals. In particular, we report magnetotransport signatures specific to chiral anomalies in Mn$_3$Ge and planar Hall effect in Mn$_3$Sn, which have not yet been found in earlier studies. The results summarized here indicate the essential role of magnetic Weyl fermions in producing the large transverse responses in the absence of magnetization.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin splitting with persistent spin textures induced by the line defect in 1T-phase of monolayer transition metal dichalcogenides

The spin splitting driven by spin-orbit coupling in monolayer (ML) transition metal dichalcogenides (TMDCs) family has been widely studied only for the 1H-phase structure, while it is not profound for the 1T-phase structure due to the centrosymmetric of the crystal. Based on first-principles calculations, we show that significant spin splitting can be induced in the ML 1T-TMDCs by introducing the line defect. Taking the ML PtSe2 as a representative example, we considered the most stable form of the line defects, namely Se-vacancy line defect (Se-VLD). We find that large spin splitting is observed in the defect states of the Se-VLD, exhibiting a highly unidirectional spin configuration in the momentum space. This peculiar spin configuration may yield the so-called persistent spin textures (PST), a specific spin structure resulting in protection against spin-decoherence and supporting an extraordinarily long spin lifetime. Moreover, by using k.p perturbation theory supplemented with symmetry analysis, we clarified that the emerging of the spin splitting maintaining the PST in the defect states is originated from the inversion symmetry breaking together with one-dimensional nature of the Se-VLD engineered ML PtSe2. Our findings pave a possible way to induce the significant spin splitting in the ML 1T-TMDCs, which could be highly important for designing spintronic devices.

0 citations0 reviewsNo code linkedOpen access