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Moh. Adhib Ulil Absor

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cond-mat.str-el cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2021arXiv

Large band splitting with tunable spin polarization in two-dimensional ferroelectric GaXY (X= Se, Te; Y= Cl, Br, I) family

It has been generally accepted that the spin-orbit coupling effect in noncentrosymmetric materials leads to the band splitting and non-trivial spin polarization in the momentum space. However, in some cases, zero net spin polarization in the split bands may occurs, dubbed as the band splitting with vanishing spin polarization (BSVSP) effect, protected by non-pseudo-polar point group symmetry of the wave vector in the first Brillouin zone [Liu et. al., Nat. Commun. \textbf{10}, 5144 (2019)]. In this paper, by using first-principles calculations, we show that the BSVSP effect emerges in two-dimensional (2D) nonsymmorphic Ga$XY$ ($X$= Se, Te; $Y$= Cl, Br, I) family, a new class of 2D materials having in-plane ferroelectricity. Taking the GaTeCl monolayer as a representative example, we observe the BSVSP effect in the split bands along the $X-M$ line located in the proximity of the conduction band minimum. By using $\vec{k}\cdot\vec{p}$ Hamiltonian derived based on the symmetry analysis, we clarify that such effect is originated from the cancellation of the local spin polarization, enforced by non-pseudo-polar $C_{2v}$ point group symmetry of the wave vector along the $X-M$ line. Importantly, we find that the spin polarization can be effectively induced by applying an external out-of-plane electric field, indicating that an electrically tunable spin polarization for spintronic applications is plausible.

preprint2020arXiv

Spin splitting with persistent spin textures induced by the line defect in 1T-phase of monolayer transition metal dichalcogenides

The spin splitting driven by spin-orbit coupling in monolayer (ML) transition metal dichalcogenides (TMDCs) family has been widely studied only for the 1H-phase structure, while it is not profound for the 1T-phase structure due to the centrosymmetric of the crystal. Based on first-principles calculations, we show that significant spin splitting can be induced in the ML 1T-TMDCs by introducing the line defect. Taking the ML PtSe2 as a representative example, we considered the most stable form of the line defects, namely Se-vacancy line defect (Se-VLD). We find that large spin splitting is observed in the defect states of the Se-VLD, exhibiting a highly unidirectional spin configuration in the momentum space. This peculiar spin configuration may yield the so-called persistent spin textures (PST), a specific spin structure resulting in protection against spin-decoherence and supporting an extraordinarily long spin lifetime. Moreover, by using k.p perturbation theory supplemented with symmetry analysis, we clarified that the emerging of the spin splitting maintaining the PST in the defect states is originated from the inversion symmetry breaking together with one-dimensional nature of the Se-VLD engineered ML PtSe2. Our findings pave a possible way to induce the significant spin splitting in the ML 1T-TMDCs, which could be highly important for designing spintronic devices.

preprint2016arXiv

Strain-controlled spin splitting in the conduction band of monolayer WS2

Spin splitting bands that arises in conduction band minimum (CBM) of WS2 monolayer (ML) play an important role in the new spin-orbit phenomena such as spin-valley coupled electronics. However, application of strain strongly modifies electronic properties of the WS2 ML, which is expected to significantly affect to the properties of the spin splitting bands. Here, by using fully-relativistic first-principles calculations based on density-functional theory, we show that a substantial spin spliting bands observed in the CBM is effectively controlled and tuned by applying the biaxial strain. We also find that these spin splitting bands induce spin textures exhibiting fully out-of-plane spin polarization in the opposite direction between the K and Q points and their time reversals in the first Brillouin zone. Our study clarify that the strain plays an significant role in the spin-orbit coupling of the WS2 ML, which has very important implications in designing future spintronics devices.