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Weiyi Wang

Weiyi Wang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.supr-concond-mat.str-elArtificial IntelligenceComputation and Language

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Published work

13 published item(s)

preprint2026arXiv

AstroReason-Bench: Evaluating Unified Agentic Planning across Heterogeneous Space Planning Problems

Recent advances in agentic Large Language Models (LLMs) have positioned them as generalist planners capable of reasoning and acting across diverse tasks. However, existing agent benchmarks largely focus on symbolic or weakly grounded environments, leaving their performance in physics-constrained real-world domains underexplored. We introduce AstroReason-Bench, a comprehensive benchmark for evaluating agentic planning in Space Planning Problems (SPP), a family of high-stakes problems with heterogeneous objectives, strict physical constraints, and long-horizon decision-making. AstroReason-Bench integrates multiple scheduling regimes, including ground station communication and agile Earth observation, and provides a unified agent-oriented interaction protocol. Evaluating on a range of state-of-the-art open- and closed-source agentic LLM systems, we find that current agents substantially underperform specialized solvers, highlighting key limitations of generalist planning under realistic constraints. AstroReason-Bench offers a challenging and diagnostic testbed for future agentic research.

0 citations0 reviewsNo code linkedOpen access
preprint2026arXiv

Strain Engineering of Intrinsic Anomalous Hall and Nernst Effects in Altermagnetic MnTe at Realistic Doping Levels

Hexagonal MnTe has emerged as a prototypical g-wave altermagnet, hosting time-reversal symmetry breaking in momentum space despite a vanishing net magnetization. While this symmetry breaking theoretically allows for an intrinsic anomalous Hall effect, experimentally observed signals have remained weak. In this work, we investigate the origin of this suppression and demonstrate a strategy to amplify anomalous transport responses within the experimentally accessible doping regime. Using a $\bm{k}\cdot\bm{p}$ effective model, we reveal that near the valence band maximum, which corresponds to the energy window relevant for typical hole doping ($\sim10^{19}cm^{-3}$), the intrinsic Hall effect is suppressed due to a symmetry-enforced cancellation of opposing Berry curvature contributions. We propose that breaking the crystalline symmetry via volume-conserving biaxial strain lifts this cancellation, resulting in a significant enhancement of the anomalous Hall conductivity by orders of magnitude. This strain-induced Fermi surface distortion also amplifies the anomalous Nernst effect. Furthermore, the analysis of the spin texture confirms that these strain-enabled anomalous transport signatures emerge while preserving the zero net magnetization.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Spin dynamics in NaFeAs and NaFe$_{0.53}$Cu$_{0.47}$As probed by resonant inelastic X-ray scattering

The parent compounds of iron-based superconductors are magnetically-ordered bad metals, with superconductivity appearing near a putative magnetic quantum critical point. The presence of both Hubbard repulsion and Hund's coupling leads to rich physics in these multiorbital systems, and motivated descriptions of magnetism in terms of itinerant electrons or localized spins. The NaFe$_{1-x}$Cu$_x$As series consists of magnetically-ordered bad metal ($x=0$), superconducting ($x\approx0.02$) and magnetically-ordered semiconducing/insulating ($x\approx0.5$) phases, providing a platform to investigate the connection between superconductivity, magnetism and electronic correlations. Here we use X-ray absorption spectroscopy and resonant inelastic X-ray scattering to study the valence state of Fe and spin dynamics in two NaFe$_{1-x}$Cu$_x$As compounds ($x=0$ and 0.47). We find that magnetism in both compounds arises from Fe$^{2+}$ atoms, and exhibits underdamped dispersive spin waves in their respective ordered states. The dispersion of spin excitations in NaFe$_{0.53}$Cu$_{0.47}$As is consistent with being quasi-one-dimensional. Compared to NaFeAs, the band top of spin waves in NaFe$_{0.53}$Cu$_{0.47}$As is slightly softened with significantly more spectral weight of the spin excitations. Our results indicate the spin dynamics in NaFe$_{0.53}$Cu$_{0.47}$As arise from localized magnetic moments and suggest the iron-based superconductors are proximate to a correlated insulating state with localized iron moments.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Nature of the spin resonance mode in CeCoIn$_5$

Spin-fluctuation-mediated unconventional superconductivity can emerge at the border of magnetism, featuring a superconducting order parameter that changes sign in momentum space. Detection of such a sign-change is experimentally challenging, since most probes are not phase-sensitive. The observation of a spin resonance mode (SRM) from inelastic neutron scattering is often seen as strong phase-sensitive evidence for a sign-changing superconducting order parameter, by assuming the SRM is a spin-excitonic bound state. Here, we show that for the heavy fermion superconductor CeCoIn$_5$, its SRM defies expectations for a spin-excitonic bound state, and is not a manifestation of sign-changing superconductivity. Instead, the SRM in CeCoIn$_5$ likely arises from a reduction of damping to a magnon-like mode in the superconducting state, due to its proximity to magnetic quantum criticality. Our findings emphasize the need for more stringent tests of whether SRMs are spin-excitonic, when using their presence to evidence sign-changing superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Orbital-selective spin waves in detwinned NaFeAs

The existence of orbital-dependent electronic correlations has been recognized as an essential ingredient to describe the physics of iron-based superconductors. NaFeAs, a parent compound of iron based superconductors, exhibits a tetragonal-to-orthorhombic lattice distortion below $T_s\approx 60$ K, forming an electronic nematic phase with two 90$^\circ$ rotated (twinned) domains, and orders antiferromagnetically below $T_N\approx 42$ K. We use inelastic neutron scattering to study spin waves in uniaxial pressure-detwinned NaFeAs. By comparing the data with combined density functional theory and dynamical mean-field theory calculations, we conclude that spin waves up to an energy scale of $E_\text{crossover} \approx 100$ meV are dominated by $d_{yz}$-$d_{yz}$ intra-orbital scattering processes, which have the two-fold ($C_2$) rotational symmetry of the underlying lattice. On the other hand, the spin wave excitations above $E_\text{crossover}$, which have approximately fourfold ($C_4$) rotational symmetry, arise from the $d_{xy}$-$d_{xy}$ intra-orbital scattering that controls the overall magnetic bandwidth in this material. In addition, we find that the low-energy ($E\approx 6$ meV) spin excitations change from approximate $C_4$ to $C_2$ rotational symmetry below a temperature $T^\ast$ ($>T_s$), while spin excitations at energies above $E_\text{crossover}$ have approximate $C_4$ rotational symmetry and are weakly temperature dependent. These results are consistent with angle resolved photoemission spectroscopy measurements, where the presence of an uniaxial strain necessary to detwin NaFeAs also raises the onset temperature $T^\ast$ of observable orbital-dependent band splitting to above $T_s$, thus supporting the notion of orbital selective spin waves in the nematic phase of iron-based superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

c-axis pressure induced antiferromagnetic order in optimally P-doped BaFe2(As0.70P0.30)2 superconductor

Superconductivity in BaFe2(As1-xPx)2 iron pnictides emerges when its in-plane two-dimensional (2D) orthorhombic lattice distortion associated with nematic phase at Ts and three-dimensional (3D) collinear antiferromagnetic (AF) order at TN (Ts = TN) are gradually suppressed with increasing x, reaching optimal superconductivity around x = 0.30 with Tc $\approx$ 30 K. Here we show that a moderate uniaxial pressure along the c-axis in BaFe2(As0.70P0.30)2 spontaneously induces a 3D collinear AF order with TN = Ts > 30 K, while only slightly suppresses Tc. Although a ~ 400 MPa pressure compresses the c-axis lattice while expanding the in-plane lattice and increasing the nearest-neighbor Fe-Fe distance, it barely changes the average iron-pnictogen height in BaFe2(As0.70P0.30)2. Therefore, the pressure- induced AF order must arise from a strong in-plane magnetoelastic coupling, suggesting that the 2D nematic phase is a competing state with superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Absence of long wavelength nematic fluctuations in LiFeAs

We investigated long-wavelength nematic fluctuations in an Fe-based superconductor LiFeAs near q=(0.05,0,0) by measuring temperature-dependent renormalization of acoustic phonons through inelastic neutron scattering. We found that the phonons have conventional behavior, as would be expected in the absence of electronic nematic fluctuations. This observation implies that either electron-phonon coupling is too weak to see any effect or that nematic fluctuations are not present.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Arrayed van der Waals Vertical Heterostructures based on 2D GaSe Grown by Molecular Beam Epitaxy

Vertically stacking two dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures in wafer scale with an atomically-sharp interface poses an unprecedented challenge. Here, we demonstrate a convenient and controllable approach for the production of wafer-scale 2D GaSe thin films by molecular beam epitaxy. In-situ reflection high-energy electron diffraction oscillations and Raman spectroscopy reveal a layer-by-layer van der Waals epitaxial growth mode. Highly-efficient photodetector arrays were fabricated based on few-layer GaSe on Si. These photodiodes show steady rectifying characteristics and a relatively high external quantum efficiency of 23.6%. The resultant photoresponse is super-fast and robust with a response time of 60 us. Importantly, the device shows no sign of degradation after 1 million cycles of operation. Our study establishes a new approach to produce controllable, robust and large-area 2D heterostructures and presents a crucial step for further practical applications.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe

Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe unveil high sensitivity and tunable responsivity to visible light. However, the device yield and the repeatability call for a further improvement of the 2D materials to render large-scale uniformity. Here we report a layer-by-layer growth of wafer-scale GaTe with a hole mobility of 28.4 cm2/Vs by molecular beam epitaxy. The arrayed p-n junctions were developed by growing few-layer GaTe directly on three-inch Si wafers. The resultant diodes reveal good rectifying characteristics, photoresponse with a maximum photoresponsivity of 2.74 A/W and a high photovoltaic external quantum efficiency up to 62%. The photocurrent reaches saturation fast enough to capture a time constant of 22 μs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photo-images were acquired by the GaTe/Si photodiodes with a reasonable contrast and spatial resolution, demonstrating for the first time the potential of integrating the 2D materials with the silicon technology for novel optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Controllable Schottky Barriers between MoS2 and Permalloy

MoS2 is a layered two-dimensional material with strong spin-orbit coupling and long spin lifetime, which is promising for electronic and spintronic applications. However, because of its large band gap and small electron affinity, a considerable Schottky barrier exists between MoS2 and contact metal, hindering the further study of spin transport and spin injection in MoS2. Although substantial progress has been made in improving device performance, the existence of metal-semiconductor Schottky barrier has not yet been fully understood. Here, we investigate permalloy (Py) contacts to both multilayer and monolayer MoS2. Ohmic contact is developed between multilayer MoS2 and Py electrodes with a negative Schottky barrier, which yields a high field-effect mobility exceeding 55 cm2V-1s-1 at low temperature. Further, by applying back gate voltage and inserting different thickness of Al2O3 layer between the metal and monolayer MoS2, we have achieved a good tunability of the Schottky barrier height (down to zero). These results are important in improving the performance of MoS2 transistor devices; and it may pave the way to realize spin transport and spin injection in MoS2.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Magnetotransport properties of Cd3As2 nanostructures

Three-dimensional (3D) topological Dirac semimetal is a new kind of material that has a linear energy dispersion in 3D momentum space and can be viewed as an analog of graphene. Extensive efforts have been devoted to the understanding of bulk materials, but yet it remains a challenge to explore the intriguing physics in low-dimensional Dirac semimetals. Here, we report on the synthesis of Cd3As2 nanowires and nanobelts and a systematic investigation of their magnetotransport properties. Temperature-dependent ambipolar behavior is evidently demonstrated, suggesting the presence of finite-size of bandgap in nanowires. Cd3As2 nanobelts, however, exhibit metallic characteristics with a high carrier mobility exceeding 32,000 cm2V-1s-1 and pronounced anomalous double-period Shubnikov-de Haas (SdH) oscillations. Unlike the bulk counterpart, the Cd3As2 nanobelts reveal the possibility of unusual change of the Fermi sphere owing to the suppression of the dimensionality. More importantly, their SdH oscillations can be effectively tuned by the gate voltage. The successful synthesis of Cd3As2 nanostructures and their rich physics open up exciting nanoelectronic applications of 3D Dirac semimetals.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin-valve Effect in NiFe/MoS2/NiFe Junctions

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been recently proposed as appealing candidate materials for spintronic applications owing to their distinctive atomic crystal structure and exotic physical properties arising from the large bonding anisotropy. Here we introduce the first MoS2-based spin-valves that employ monolayer MoS2 as the nonmagnetic spacer. In contrast with what expected from the semiconducting band-structure of MoS2, the vertically sandwiched-MoS2 layers exhibit metallic behavior. This originates from their strong hybridization with the Ni and Fe atoms of the Permalloy (Py) electrode. The spin-valve effect is observed up to 240 K, with the highest magnetoresistance (MR) up to 0.73% at low temperatures. The experimental work is accompanied by the first principle electron transport calculations, which reveal an MR of ~ 9% for an ideal Py/MoS2/Py junction. Our results clearly identify TMDs as a promising spacer compound in magnetic tunnel junctions and may open a new avenue for the TMDs-based spintronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Tunable charge-trap memory based on few-layer MoS2

Charge-trap memory with high-\k dielectric materials is considered to be a promising candidate for next-generation memory devices. Ultrathin layered two-dimensional (2D) materials like graphene and MoS2 have been receiving much attention because of their novel physical properties and potential applications in electronic devices. Here, we report on a dual-gate charge-trap memory device composed of a few-layer MoS2 channel and a three-dimensional (3D) Al2O3/HfO2/Al2O3 charge-trap gate stack. Owing to the extraordinary trapping ability of both electrons and holes in HfO2, the MoS2 memory device exhibits an unprecedented memory window exceeding 20 V. More importantly, with a back gate the window size can be effectively tuned from 15.6 to 21 V; the program/erase current ratio can reach up to 104, far beyond Si-based flash memory, which allows for multi-bit information storage. Furthermore, the device shows a high mobility of 170 cm2V-1s-1, a good endurance of hundreds of cycles and a stable retention of ~28% charge loss after 10 years which is drastically lower than ever reported MoS2 flash memory. The combination of 2D materials with traditional high-\k charge-trap gate stacks opens up an exciting field of novel nonvolatile memory devices.

0 citations0 reviewsNo code linkedOpen access