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Researcher profile

Fábio D. A. Aarão Reis

Fábio D. A. Aarão Reis contributes to research discovery and scholarly infrastructure.

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cond-mat.stat-mech

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Published work

3 published item(s)

preprint2021arXiv

Time increasing rates of infiltration and reaction in porous media at the percolation thresholds

The infiltration of a solute in a fractal porous medium is usually anomalous, but chemical reactions of the solute and that material may increase the porosity and affect the evolution of the infiltration. We study this problem in two- and three-dimensional lattices with randomly distributed porous sites at the critical percolation thresholds and with a border in contact with a reservoir of an aggressive solute. The solute infiltrates that medium by diffusion and the reactions with the impermeable sites produce new porous sites with a probability $r$, which is proportional to the ratio of reaction and diffusion rates at the scale of a lattice site. Numerical simulations for $r\ll1$ show initial subdiffusive scaling and long time Fickean scaling of the infiltrated volumes or areas, but with an intermediate regime with time increasing rates of infiltration and reaction. The anomalous exponent of the initial regime agrees with a relation previously applied to infinitely ramified fractals. We develop a scaling approach that explains the subsequent time increase of the infiltration rate, the dependence of this rate on $r$, and the crossover to the Fickean regime. The exponents of the scaling relations depend on the fractal dimensions of the critical percolation clusters and on the dimensions of random walks in those clusters. The time increase of the reaction rate is also justified by that reasoning. As $r$ decreases, there is an increase in the number of time decades of the intermediate regime, which suggests that the time increasing rates are more likely to be observed is slowly reacting systems.

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preprint2020arXiv

Statistics of adatom diffusion in a model of thin film growth

We study the statistics of the number of executed hops of adatoms at the surface of films grown with the Clarke-Vvedensky (CV) model in simple cubic lattices. The distributions of this number, $N$, are determined in films with average thicknesses close to $50$ and $100$ monolayers for a broad range of values of the diffusion-to-deposition ratio $R$ and of the probability $ε$ that lowers the diffusion coefficient for each lateral neighbor. The mobility of subsurface atoms and the energy barriers for crossing step edges are neglected. Simulations show that the adatoms execute uncorrelated diffusion during the time in which they move on the film surface. In a low temperature regime, typically with $Rε\lesssim 1$, the attachment to lateral neighbors is almost irreversible, the average number of hops scales as $\langle N\rangle \sim R^{0.38\pm 0.01}$, and the distribution of that number decays approximately as $\exp\left[-\left({N/\langle N\rangle}\right)^{0.80\pm 0.07}\right]$. Similar decay is observed in simulations of random walks in a plane with randomly distributed absorbing traps and the estimated relation between $\langle N\rangle$ and the density of terrace steps is similar to that observed in the trapping problem, which provides a conceptual explanation of that regime. As the temperature increases, $\langle N\rangle$ crosses over to another regime when $Rε^{3.0\pm 0.3}\sim 1$, which indicates high mobility of all adatoms at terrace borders. The distributions $P\left( N\right)$ change to simple exponential decays, due to the constant probability for an adatom to become immobile after being covered by a new deposited layer. At higher temperatures, the surfaces become very smooth and $\langle N\rangle \sim Rε^{1.85\pm 0.15}$, which is explained by an analogy with submonolayer growth.

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preprint2020arXiv

Thin film growth models with long surface diffusion lengths

In limited mobility (LM) models of thin film deposition, the final position of each atom or molecule is chosen according to a set of stochastic rules before the incidence of another atom or molecule. Here we investigate the possibility of a LM model to reproduce features of a more realistic approach that represents the interplay of collective adatom diffusion and the external flux. In the LM model introduced here, each adatom may execute $G$ hops to neighboring columns of the deposit, but a hop attempt from a site with $n$ lateral neighbors has probability $P^n$, with $P<1$. These rules resemble those of the Clarke-Vvedensky (CV) model without energy barriers at step edges, whose main parameters are the diffusion-to-deposition ratio $R$ on terraces and the detachment probability $ε$ per lateral neighbor. At short times, the roughness of the LM model can be written in terms of a scaling function of $G$ and $P$ and the growth exponent is consistent with the Villain-Lai-Das Sarma universality class. The evolution of the surface roughness and of the autocorrelation function of the CV model is reproduced with reasonable accuracy by the LM model with suitable choices of parameters. The increase of the parameters $G$ and $R$ of those models produces smoother film surfaces, while the increase of $P$ and $ε$ smoothen the terrace boundaries at short lengthscales. However, the detachment probabilities of the two models have very different effects on the surface roughness: in the LM model, for fixed $G$, the surface roughness increases as $P$ increases; in the CV model, the surface smoothens as $ε$ increases, for fixed $R$. This result is related to the non-Markovian nature of the LM model, since the diffusivity of an adatom depends on its history at the film surface and may be severely reduced after a detachment from a terrace step.

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