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Ismael S. S. Carrasco

Ismael S. S. Carrasco contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Kardar-Parisi-Zhang growth on square domains that enlarge nonlinearly in time

We study discrete KPZ growth models deposited on square lattice substrates, whose (average) lateral size enlarges as $L= L_0 + ωt^γ$. Our numerical simulations reveal that the competition between the substrate expansion and the increase of the correlation length parallel to the substrate, $ξ\simeq c t^{1/z}$, gives rise to a number of interesting results. For instance, when $γ< 1/z$ the interface becomes fully correlated, but its squared roughness, $W_2$, keeps increasing as $W_2 \sim t^{2αγ}$, as previously observed for 1D systems. A careful analysis of this scaling, accounting for an intrinsic width on it, allows us to estimate the roughness exponent of the 2D KPZ class as $α= 0.387(1)$, which is very accurate and robust, once it was obtained averaging the exponents for different models and growth conditions (i.e., for various $γ$&#39;s and $ω$&#39;s). In this correlated regime, the height distributions (HDs) and spatial covariances are consistent with those expected for the steady-state regime of the 2D KPZ class for flat geometry. For $γ\approx 1/z$, we find a family of distributions and covariances continuously interpolating between those for the steady-state and the growth regime of radial KPZ interfaces, as the ratio $ω/c$ augments. When $γ>1/z$ the system stays forever in the growth regime and the HDs always converge to the same asymptotic distribution, which is the one for the radial case. The spatial covariances, on the other hand, are $(γ,ω)$-dependent, showing a trend towards the covariance of a random deposition in enlarging substrates as the expansion rate increases. These results considerably generalize our understanding of the height fluctuations in 2D KPZ systems, revealing a scenario very similar to the one previously found in the 1D case.

preprint2021arXiv

Time increasing rates of infiltration and reaction in porous media at the percolation thresholds

The infiltration of a solute in a fractal porous medium is usually anomalous, but chemical reactions of the solute and that material may increase the porosity and affect the evolution of the infiltration. We study this problem in two- and three-dimensional lattices with randomly distributed porous sites at the critical percolation thresholds and with a border in contact with a reservoir of an aggressive solute. The solute infiltrates that medium by diffusion and the reactions with the impermeable sites produce new porous sites with a probability $r$, which is proportional to the ratio of reaction and diffusion rates at the scale of a lattice site. Numerical simulations for $r\ll1$ show initial subdiffusive scaling and long time Fickean scaling of the infiltrated volumes or areas, but with an intermediate regime with time increasing rates of infiltration and reaction. The anomalous exponent of the initial regime agrees with a relation previously applied to infinitely ramified fractals. We develop a scaling approach that explains the subsequent time increase of the infiltration rate, the dependence of this rate on $r$, and the crossover to the Fickean regime. The exponents of the scaling relations depend on the fractal dimensions of the critical percolation clusters and on the dimensions of random walks in those clusters. The time increase of the reaction rate is also justified by that reasoning. As $r$ decreases, there is an increase in the number of time decades of the intermediate regime, which suggests that the time increasing rates are more likely to be observed is slowly reacting systems.

preprint2020arXiv

Statistics of adatom diffusion in a model of thin film growth

We study the statistics of the number of executed hops of adatoms at the surface of films grown with the Clarke-Vvedensky (CV) model in simple cubic lattices. The distributions of this number, $N$, are determined in films with average thicknesses close to $50$ and $100$ monolayers for a broad range of values of the diffusion-to-deposition ratio $R$ and of the probability $ε$ that lowers the diffusion coefficient for each lateral neighbor. The mobility of subsurface atoms and the energy barriers for crossing step edges are neglected. Simulations show that the adatoms execute uncorrelated diffusion during the time in which they move on the film surface. In a low temperature regime, typically with $Rε\lesssim 1$, the attachment to lateral neighbors is almost irreversible, the average number of hops scales as $\langle N\rangle \sim R^{0.38\pm 0.01}$, and the distribution of that number decays approximately as $\exp\left[-\left({N/\langle N\rangle}\right)^{0.80\pm 0.07}\right]$. Similar decay is observed in simulations of random walks in a plane with randomly distributed absorbing traps and the estimated relation between $\langle N\rangle$ and the density of terrace steps is similar to that observed in the trapping problem, which provides a conceptual explanation of that regime. As the temperature increases, $\langle N\rangle$ crosses over to another regime when $Rε^{3.0\pm 0.3}\sim 1$, which indicates high mobility of all adatoms at terrace borders. The distributions $P\left( N\right)$ change to simple exponential decays, due to the constant probability for an adatom to become immobile after being covered by a new deposited layer. At higher temperatures, the surfaces become very smooth and $\langle N\rangle \sim Rε^{1.85\pm 0.15}$, which is explained by an analogy with submonolayer growth.