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F. J. Walker

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4works
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4 publications

preprint2013arXiv

Hysteretic electrical transport in BaTiO3_3/Ba1−x_{1-x}Srx_xTiO3_3/Ge heterostructures

We present electrical transport measurements of heterostructures comprised of BaTiO3_3 and Ba1−x_{1-x}Srx_xTiO3_3 epitaxially grown on Ge. The Sr-alloying imparts compressive strain to the BaTiO3_3, which enables the thermal expansion mismatch between BaTiO3_3 and Ge to be overcome to achieve cc-axis oriented growth. The conduction bands of BaTiO3_3 and Ba1−x_{1-x}Srx_xTiO3_3 are nearly aligned with the conduction band of Ge, which facilitates electron transport. Electrical transport measurements through the dielectric stack exhibit rectifying behavior and hysteresis, where the latter is consistent with ferroelectric switching.

preprint2012arXiv

Scanning SQUID Susceptometry of a paramagnetic superconductor

Scanning SQUID susceptometry images the local magnetization and susceptibility of a sample. By accurately modeling the SQUID signal we can determine the physical properties such as the penetration depth and permeability of superconducting samples. We calculate the scanning SQUID susceptometry signal for a superconducting slab of arbitrary thickness with isotropic London penetration depth, on a non-superconducting substrate, where both slab and substrate can have a paramagnetic response that is linear in the applied field. We derive analytical approximations to our general expression in a number of limits. Using our results, we fit experimental susceptibility data as a function of the sample-sensor spacing for three samples: 1) delta-doped SrTiO3, which has a predominantly diamagnetic response, 2) a thin film of LaNiO3, which has a predominantly paramagnetic response, and 3) a two-dimensional electron layer (2-DEL) at a SrTiO3/AlAlO3 interface, which exhibits both types of response. These formulas will allow the determination of the concentrations of paramagnetic spins and superconducting carriers from fits to scanning SQUID susceptibility measurements.

preprint2011arXiv

Resonant phonon coupling across the La{1-x}Sr{x}MnO{3}/SrTiO{3} interface

The transport and magnetic properties of correlated La{0.53}Sr{0.47}MnO{3} ultrathin films, grown epitaxially on SrTiO{3}, show a sharp cusp at the structural transition temperature of the substrate. Using a combination of experiment and theory we show that the cusp is a result of resonant coupling between the charge carriers in the film and a soft phonon mode in the SrTiO{3}, mediated through oxygen octahedra in the film. The amplitude of the mode diverges towards the transition temperature, and phonons are launched into the first few atomic layers of the film affecting its electronic state.

preprint2010arXiv

Origin of the magnetoelectric coupling effect in Pb(Zr0.2Ti0.8)O3/La0.8Sr0.2MnO3 multiferroic heterostructures

The electronic valence state of Mn in Pb(Zr0.2Ti0.8)O3/La0.8Sr0.2MnO3 multiferroic heterostructures is probed by near edge x-ray absorption spectroscopy as a function of the ferroelectric polarization. We observe a temperature independent shift in the absorption edge of Mn associated with a change in valency induced by charge carrier modulation in the La0.8Sr0.2MnO3, demonstrating the electronic origin of the magnetoelectric effect. Spectroscopic, magnetic, and electric characterization shows that the large magnetoelectric response originates from a modified interfacial spin configuration, opening a new pathway to the electronic control of spin in complex oxide materials.

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