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Researcher profile

C. A. F. Vaz

C. A. F. Vaz contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hall

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Published work

11 published item(s)

preprint2016arXiv

Additive interfacial chiral interaction in multilayers for stabilization of small individual skyrmion at room temperature

Facing the ever-growing demand for data storage will most probably require a new paradigm. Nanoscale magnetic skyrmions are anticipated to solve this issue as they are arguably the smallest spin textures in magnetic thin films in nature. We designed cobalt-based multilayered thin films where the cobalt layer is sandwiched between two heavy metals providing additive interfacial Dzyaloshinskii-Moriya interactions, which reach a value close to 2 mJ m-2 in the case of the Ir|Co|Pt asymmetric multilayers. Using a magnetization-sensitive scanning x-ray transmission microscopy technique, we imaged small magnetic domains at very low field in these multilayers. The study of their behavior in perpendicular magnetic field allows us to conclude that they are actually magnetic skyrmions stabilized by the large Dzyaloshinskii-Moriya interaction. This discovery of stable sub-100 nm individual skyrmions at room temperature in a technologically relevant material opens the way for device applications in a near future.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Role of hexagonal boron nitride in protecting ferromagnetic nanostructures from oxidation

Ferromagnetic contacts are widely used to inject spin polarized currents into non-magnetic materials such as semiconductors or 2-dimensional materials like graphene. In these systems, oxidation of the ferromagnetic materials poses an intrinsic limitation on device performance. Here we investigate the role of ex-situ transferred chemical vapour deposited hexagonal boron nitride (hBN) as an oxidation barrier for nanostructured cobalt and permalloy electrodes. The chemical state of the ferromagnets was investigated using X-ray photoemission electron microscopy owing to its high sensitivity and lateral resolution. We have compared the oxide thickness formed on ferromagnetic nanostructures covered by hBN to uncovered reference structures. Our results show that hBN reduces the oxidation rate of ferromagnetic nanostructures suggesting that it could be used as an ultra-thin protection layer in future spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin configurations in Co2FeAl0.4Si0.6 Heusler alloy thin film elements

We determine experimentally the spin structure of half-metallic Co2FeAl0.4Si0.6 Heusler alloy elements using magnetic microscopy. Following magnetic saturation, the dominant magnetic states consist of quasi-uniform configurations, where a strong influence from the magnetocrystalline anisotropy is visible. Heating experiments show the stability of the spin configuration of domain walls in confined geometries up to 800 K. The switching temperature for the transition from transverse to vortex walls in ring elements is found to increase with ring width, an effect attributed to structural changes and consequent changes in magnetic anisotropy, which start to occur in the narrower elements at lower temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Field-dependent anisotropic magnetoresistance and planar Hall effect in epitaxial magnetite thin films

A systematic study of the temperature and magnetic field dependence of the longitudinal and transverse resistivities of epitaxial thin films of magnetite (Fe3O4) is reported. The anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) are sensitive to the in-plane orientation of current and magnetization with respect to crystal axes in a way consistent with the cubic symmetry of the system. We also show that the AMR exhibit sign reversal as a function of temperature, and that it shows significant field dependence without saturation up to 9 T. Our results provide a unified description of the anisotropic magnetoresistance effects in epitaxial magnetite films and illustrate the need for a full determination of the resistivity tensor in crystalline systems.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Resonant phonon coupling across the La{1-x}Sr{x}MnO{3}/SrTiO{3} interface

The transport and magnetic properties of correlated La{0.53}Sr{0.47}MnO{3} ultrathin films, grown epitaxially on SrTiO{3}, show a sharp cusp at the structural transition temperature of the substrate. Using a combination of experiment and theory we show that the cusp is a result of resonant coupling between the charge carriers in the film and a soft phonon mode in the SrTiO{3}, mediated through oxygen octahedra in the film. The amplitude of the mode diverges towards the transition temperature, and phonons are launched into the first few atomic layers of the film affecting its electronic state.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Exchange bias and interface electronic structure in Ni/Co3O4(011)

A detailed study of the exchange bias effect and the interfacial electronic structure in Ni/Co3O4(011) is reported. Large exchange anisotropies are observed at low temperatures, and the exchange bias effect persists to temperatures well above the Neel temperature of bulk Co3O4, of about 40 K: to ~80 K for Ni films deposited on well ordered oxide surfaces, and ~150 K for Ni films deposited on rougher Co3O4 surfaces. Photoelectron spectroscopy measurements as a function of Ni thickness show that Co reduction and Ni oxidation occur over an extended interfacial region. We conclude that the exchange bias observed in Ni/Co3O4, and in similar ferromagnetic metallic/Co3O4 systems, is not intrinsic to Co3O4 but rather due to the formation of CoO at the interface.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Origin of the magnetoelectric coupling effect in Pb(Zr0.2Ti0.8)O3/La0.8Sr0.2MnO3 multiferroic heterostructures

The electronic valence state of Mn in Pb(Zr0.2Ti0.8)O3/La0.8Sr0.2MnO3 multiferroic heterostructures is probed by near edge x-ray absorption spectroscopy as a function of the ferroelectric polarization. We observe a temperature independent shift in the absorption edge of Mn associated with a change in valency induced by charge carrier modulation in the La0.8Sr0.2MnO3, demonstrating the electronic origin of the magnetoelectric effect. Spectroscopic, magnetic, and electric characterization shows that the large magnetoelectric response originates from a modified interfacial spin configuration, opening a new pathway to the electronic control of spin in complex oxide materials.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Experimental study of the interfacial cobalt oxide in Co3O4/a-Al2O3(0001) epitaxial films

A detailed spectroscopic and structural characterization of ultrathin cobalt oxide films grown by O-assisted molecular beam epitaxy on a-Al2O3(0001) single crystals is reported. The experimental results show that the cobalt oxide films become progressively more disordered with increasing thickness, starting from the early stages of deposition. Low energy electron diffraction patterns suggest that the unit cell remains similar to that of a-Al2O3(0001) up to a thickness of 17 A, while at larger thicknesses a pattern identified with that of Co3O4(111) becomes visible. X-ray photoelectron spectroscopy reveals sudden changes in the shape of the Co 2p lines from 3.4 to 17 A cobalt oxide thickness, indicating the transition from an interfacial cobalt oxide layer towards [111]-oriented Co3O4. In particular, the absence of characteristic satellite peaks in the Co 2p lines indicates the formation of a trivalent, octahedrally coordinated, interfacial cobalt oxide layer during the early stages of growth, identified as the Co2O3 corundum phase.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Growth and characterization of thin epitaxial Co3O4(111) films

The growth and characterization of epitaxial Co3O4(111) films grown by oxygen plasma-assisted molecular beam epitaxy on single crystalline a-Al2O3(0001) is reported. The Co3O4(111) grows single crystalline with the epitaxial relation Co3O4(111)[-12-1]||a-Al2O3(0001)[10-10], as determined from in situ electron diffraction. Film stoichiometry is confirmed by x-ray photoelectron spectroscopy, while ex situ x-ray diffraction measurements show that the Co3O4 films are fully relaxed. Post-growth annealing induces significant modifications in the film morphology, including a sharper Co3O4/a-Al2O3 interface and improved surface crystallinity, as shown by x-ray reflectometry, atomic force microscopy and electron diffraction measurements. Despite being polar, the surface of both as-grown and annealed Co3O4(111) films are (1 * 1), which can be explained in terms of inversion in the surface spinel structure.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Interface and electronic characterization of thin epitaxial Co3O4 films

The interface and electronic structure of thin (~20-74 nm) Co3O4(110) epitaxial films grown by oxygen-assisted molecular beam epitaxy on MgAl2O4(110) single crystal substrates have been investigated by means of real and reciprocal space techniques. As-grown film surfaces are found to be relatively disordered and exhibit an oblique low energy electron diffraction (LEED) pattern associated with the O-rich CoO2 bulk termination of the (110) surface. Interface and bulk film structure are found to improve significantly with post-growth annealing at 820 K in air and display sharp rectangular LEED patterns, suggesting a surface stoichiometry of the alternative Co2O2 bulk termination of the (110) surface. Non-contact atomic force microscopy demonstrates the presence of wide terraces separated by atomic steps in the annealed films that are not present in the as-grown structures; the step height of ~ 2.7 A corresponds to two atomic layers and confirms a single termination for the annealed films, consistent with the LEED results. A model of the (1 * 1) surfaces that allows for compensation of the polar surfaces is presented.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Magnetic anisotropy modulation of magnetite in Fe3O4/BaTiO3(100) epitaxial structures

Temperature dependent magnetometry and transport measurements on epitaxial Fe3O4 films grown on BaTiO3(100) single crystals by molecular beam epitaxy show a series of discontinuities, that are due to changes in the magnetic anisotropy induced by strain in the different crystal phases of BaTiO3. The magnetite film is under tensile strain at room temperature, which is ascribed to the lattice expansion of BaTiO3 at the cubic to tetragonal transition, indicating that the magnetite film is relaxed at the growth temperature. From the magnetization versus temperature curves, the variation in the magnetic anisotropy is determined and compared with the magnetoelastic anisotropies. These results demonstrate the possibility of using the piezoelectric response of BaTiO3 to modulate the magnetic anisotropy of magnetite films.

0 citations0 reviewsNo code linkedOpen access