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J. H. Ngai

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cond-mat.mtrl-sci cond-mat.supr-con cond-mat.str-el

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preprint2014arXiv

Band-gap engineering at a semiconductor - crystalline oxide interface

The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to electrically coupling crystalline oxides with semiconductors to realize functional behavior is controlling the manner in which their bands align at interfaces. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZr $_{x}$ Ti $_{1-x}$ O $_3$ and Ge, in which the band-gap of the former is enhanced with Zr content $x$ . We present structural and electrical characterization of SrZr $_{x}$ Ti $_{1-x}$ O $_3$ -Ge heterojunctions for $x$ = 0.2 to 0.75 and demonstrate the band offset can be tuned from type-II to type-I, with the latter being verified using photoemission measurements. The type-I band offset provides a platform to integrate the dielectric, ferroelectric and ferromagnetic functionalities of oxides with semiconducting devices.

preprint2013arXiv

Hysteretic electrical transport in BaTiO $_3$ /Ba $_{1-x}$ Sr $_x$ TiO $_3$ /Ge heterostructures

We present electrical transport measurements of heterostructures comprised of BaTiO $_3$ and Ba $_{1-x}$ Sr $_x$ TiO $_3$ epitaxially grown on Ge. The Sr-alloying imparts compressive strain to the BaTiO $_3$ , which enables the thermal expansion mismatch between BaTiO $_3$ and Ge to be overcome to achieve $c$ -axis oriented growth. The conduction bands of BaTiO $_3$ and Ba $_{1-x}$ Sr $_x$ TiO $_3$ are nearly aligned with the conduction band of Ge, which facilitates electron transport. Electrical transport measurements through the dielectric stack exhibit rectifying behavior and hysteresis, where the latter is consistent with ferroelectric switching.

preprint2012arXiv

Scanning SQUID Susceptometry of a paramagnetic superconductor

Scanning SQUID susceptometry images the local magnetization and susceptibility of a sample. By accurately modeling the SQUID signal we can determine the physical properties such as the penetration depth and permeability of superconducting samples. We calculate the scanning SQUID susceptometry signal for a superconducting slab of arbitrary thickness with isotropic London penetration depth, on a non-superconducting substrate, where both slab and substrate can have a paramagnetic response that is linear in the applied field. We derive analytical approximations to our general expression in a number of limits. Using our results, we fit experimental susceptibility data as a function of the sample-sensor spacing for three samples: 1) delta-doped SrTiO3, which has a predominantly diamagnetic response, 2) a thin film of LaNiO3, which has a predominantly paramagnetic response, and 3) a two-dimensional electron layer (2-DEL) at a SrTiO3/AlAlO3 interface, which exhibits both types of response. These formulas will allow the determination of the concentrations of paramagnetic spins and superconducting carriers from fits to scanning SQUID susceptibility measurements.

preprint2009arXiv

Local tunneling probe of (110) Y_0.95Ca_0.05Ba_2Cu_3O_7-delta thin films in a magnetic field

Scanning tunneling spectroscopy was performed on (110)-oriented thin films of Ca-overdoped Y $_{0.95}$ Ca $_{0.05}$ Ba $_2$ Cu $_3$ O $_{7-δ}$ at 4.2K, to probe the local evolution of Andreev $-$ Saint-James surface states in a c-axis magnetic field. In zero field, we observed conductance spectra with spontaneously-split peaks and spectra with unsplit zero-bias peaks. The former showed enhanced splitting with field, and the latter showed threshold splitting above finite fields. Although both field evolutions can be described in terms of screening and orbital supercurrents, within the framework of $d\pm iα$ pairing ( $d$ = $d_{x^2-y^2}$ ; $α$ = $d_{xy}$ , $s$ ), the enhanced splitting is consistent with only the $d$ + $iα$ state. Our results have direct implications on the stability of broken time-reversal symmetry in cuprate superconductors.

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J. H. Ngai

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4 publications

Band-gap engineering at a semiconductor - crystalline oxide interface

Hysteretic electrical transport in BaTiO $_3$ /Ba $_{1-x}$ Sr $_x$ TiO $_3$ /Ge heterostructures

Scanning SQUID Susceptometry of a paramagnetic superconductor

Local tunneling probe of (110) Y_0.95Ca_0.05Ba_2Cu_3O_7-delta thin films in a magnetic field

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J. H. Ngai

Research overview

Is this your work?

4 publications

Band-gap engineering at a semiconductor - crystalline oxide interface

Hysteretic electrical transport in BaTiO3_33​/Ba1−x_{1-x}1−x​Srx_xx​TiO3_33​/Ge heterostructures

Scanning SQUID Susceptometry of a paramagnetic superconductor

Local tunneling probe of (110) Y_0.95Ca_0.05Ba_2Cu_3O_7-delta thin films in a magnetic field

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Building this map preview

Hysteretic electrical transport in BaTiO $_3$ /Ba $_{1-x}$ Sr $_x$ TiO $_3$ /Ge heterostructures