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Eva Y. Andrei

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Published work

18 published item(s)

preprint2025arXiv

Protonic Nickelate Device Networks for Spatiotemporal Neuromorphic Computing

Computation in biological neural circuits arises from the interplay of nonlinear temporal responses and spatially distributed dynamic network interactions. Replicating this richness in hardware has remained challenging, as most neuromorphic devices emulate only isolated neuron- or synapse-like functions. In this work, we introduce an integrated neuromorphic computing platform in which both nonlinear spatiotemporal processing and programmable memory are realized within a single perovskite nickelate material system. By engineering symmetric and asymmetric hydrogenated NdNiO3 junction devices on the same wafer, we combine ultrafast, proton-mediated transient dynamics with stable multilevel resistance states. Networks of symmetric NdNiO3 junctions exhibit emergent spatial interactions mediated by proton redistribution, while each node simultaneously provides short-term temporal memory, enabling nanoseconds scale operation with an energy cost of 0.2 nJ per input. When interfaced with asymmetric output units serving as reconfigurable long-term weights, these networks allow both feature transformation and linear classification in the same material system. Leveraging these emergent interactions, the platform enables real-time pattern recognition and achieves high accuracy in spoken-digit classification and early seizure detection, outperforming temporal-only or uncoupled architectures. These results position protonic nickelates as a compact, energy-efficient, CMOS-compatible platform that integrates processing and memory for scalable intelligent hardware.

preprint2022arXiv

Revealing the Charge Density Wave Proximity Effect in Graphene on 1T-TaS2

Proximity effect is a very powerful approach and has been widely applied to induce electron correlations such as: superconductivity, magnetism and spin-orbit effects at the interface of heterostructure quantum materials. However, proximity induced charge density wave (CDW) state has remained elusive. We report the first observation of a novel proximity induced CDW within a graphene layer that is deposited on 1T-TaS2 crystal. By using scanning tunneling microscopy and spectroscopy to probe the interface of the graphene/1T-TaS2 heterostructure together with theoretical modeling, we show that the interactions between the Dirac-like carriers in graphene and the correlated electrons in 1T-TaS2 induce a periodic charge density modulation within graphene and modify the band structure at the surface of 1T-TaS2, resulting in a 7.5% reduction of its gap size. Our results provide a new platform to manipulate the electron charge correlations in heterostructures.

preprint2020arXiv

Evidence of Flat Bands and Correlated States in Buckled Graphene Superlattices

Two-dimensional atomic crystals can radically change their properties in response to external influences such as substrate orientation or strain, resulting in essentially new materials in terms of the electronic structure. A striking example is the creation of flat-bands in bilayer-graphene for certain 'magic' twist-angles between the orientations of the two layers. The quenched kinetic-energy in these flat-bands promotes electron-electron interactions and facilitates the emergence of strongly-correlated phases such as superconductivity and correlated-insulators. However, the exquisite fine-tuning required for finding the magic-angle where flat-bands appear in twisted-bilayer graphene, poses challenges to fabrication and scalability. Here we present an alternative route to creating flat-bands that does not involve fine tuning. Using scanning tunneling microscopy and spectroscopy, together with numerical simulations, we demonstrate that graphene monolayers placed on an atomically-flat substrate can be forced to undergo a buckling-transition, resulting in a periodically modulated pseudo-magnetic field, which in turn creates a post-graphene material with flat electronic bands. Bringing the Fermi-level into these flat-bands by electrostatic doping, we observe a pseudogap-like depletion in the density-of-states, which signals the emergence of a correlated-state. The described approach of 2D crystal buckling offers a strategy for creating other superlattice systems and, in particular, for exploring interaction phenomena characteristic of flat-bands.

preprint2016arXiv

Localized electronic states at grain boundaries on the surface of graphene and graphite

Recent advances in large-scale synthesis of graphene and other 2D materials have underscored the importance of local defects such as dislocations and grain boundaries (GBs), and especially their tendency to alter the electronic properties of the material. Understanding how the polycrystalline morphology affects the electronic properties is crucial for the development of applications such as flexible electronics, energy harvesting devices or sensors. We here report on atomic scale characterization of several GBs and on the structural-dependence of the localized electronic states in their vicinity. Using low temperature scanning tunneling microscopy (STM) and spectroscopy (STS), together with tight binding and ab initio numerical simulations we explore GBs on the surface of graphite and elucidate the interconnection between the local density of states (LDOS) and their atomic structure. We show that the electronic fingerprints of these GBs consist of pronounced resonances which, depending on the relative orientation of the adjacent crystallites, appear either on the electron side of the spectrum or as an electron-hole symmetric doublet close to the charge neutrality point. These two types of spectral features will impact very differently the transport properties allowing, in the asymmetric case to introduce transport anisotropy which could be utilized to design novel growth and fabrication strategies to control device performance.

preprint2016arXiv

Realization of a Tunable Artificial Atom at a Supercritically Charged Vacancy in Graphene

The remarkable electronic properties of graphene have fueled the vision of a graphene-based platform for lighter, faster and smarter electronics and computing applications. One of the challenges is to devise ways to tailor its electronic properties and to control its charge carriers. Here we show that a single atom vacancy in graphene can stably host a local charge and that this charge can be gradually built up by applying voltage pulses with the tip of a scanning tunneling microscope (STM). The response of the conduction electrons in graphene to the local charge is monitored with scanning tunneling and Landau level spectroscopy, and compared to numerical simulations. As the charge is increased, its interaction with the conduction electrons undergoes a transition into a supercritical regime 6-11 where itinerant electrons are trapped in a sequence of quasi-bound states which resemble an artificial atom. The quasi-bound electron states are detected by a strong enhancement of the density of states (DOS) within a disc centered on the vacancy site which is surrounded by halo of hole states. We further show that the quasi-bound states at the vacancy site are gate tunable and that the trapping mechanism can be turned on and off, providing a new mechanism to control and guide electrons in graphene

preprint2016arXiv

Strained fold assisted transport in graphene systems

Deformations in graphene systems are central elements in the novel field of {\it straintronics}. Various strain geometries have been proposed to produce specific properties but their experimental realization has been limited. Because strained folds can be engineered on graphene samples on appropriate substrates, we study their effects on graphene transport properties. We show the existence of an enhanced local density of states (LDOS) along the direction of the strained fold that originates from localization of higher energy states, and provides extra conductance channels at lower energies. In addition to exhibit sublattice symmetry breaking, these states are valley polarized, with quasi-ballistic properties in smooth disorder potentials. We confirmed that these results persist in the presence of strong edge disorder, making these geometries viable electronic waveguides. These findings could be tested in properly engineered experimental settings.

preprint2015arXiv

Local and Global Screening Properties of Graphene Revealed through Landau Level Spectroscopy

One-atom thick crystalline layers and their vertical heterostructures carry the promise of designer electronic materials that are unattainable by standard growth techniques. In order to realize their potential it is necessary to isolate them from environmental disturbances in particular those introduced by the substrate. But finding and characterizing suitable substrates, and minimizing the random potential fluctuations they introduce, has been a persistent challenge in this emerging field. Here we show that Landau-level (LL) spectroscopy is exquisitely sensitive to potential fluctuations on both local and global length scales. Harnessing this technique we demonstrate that the insertion of an intermediate graphene layer provides superior screening of substrate induced disturbances, more than doubling the electronic mean free path. Furthermore, we find that the proximity of hBN acts as a nano-scale vacuum cleaner, dramatically suppressing the global potential fluctuations. This makes it possible to fabricate high quality devices on standard SiO2 substrates.

preprint2014arXiv

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

The discovery of graphene has put the spotlight on other layered materials including transition metal dichalcogenites (TMD) as building blocks for novel heterostructures assembled from stacked atomic layers. Molybdenum disulfide, MoS2, a semiconductor in the TMD family, with its remarkable thermal and chemical stability and high mobility, has emerged as a promising candidate for post-silicon applications such as switching, photonics, and flexible electronics. Since these rely on controlling the position of the Fermi energy (EF), it is crucial to understand its dependence on doping and gating. Here we employed scanning tunneling microscopy (STM) and spectroscopy (STS) with gating capabilities to measure the bandgap and the position of EF in MoS2, and to track its evolution with gate voltage. For bulk samples, the measured bandgap (~1.3eV) is comparable to the value obtained by photoluminescence, and the position of EF (~0.35eV) below the conduction band, is consistent with n-doping reported in this material. Using topography together with spectroscopy we traced the source of the n-doping in bulk MoS2 samples to point defects, which we attribute to S vacancies. In contrast, for thin films deposited on SiO2, we found significantly higher levels of n-doping that cannot be attributed to S vacancies. By combining gated STS with transport measurements in a field effect transistor (FET) configuration, we demonstrate that the higher levels of n-doping in thin film samples is due to charge traps at the sample-substrate interface.

preprint2014arXiv

MoS2: a Choice Substrate for Accessing and Tuning the Electronic Properties of Graphene

One of the enduring challenges in graphene research and applications is the extreme sensitivity of its charge carriers to external perturbations, especially those introduced by the substrate. The best available substrates to date, graphite and hBN, still pose limitations: graphite being metallic does not allow gating, while both hBN and graphite having lattice structures closely matched to that of graphene, may cause significant band structure reconstruction. Here we show that the atomically smooth surface of exfoliated MoS2 provides access to the intrinsic electronic structure of graphene without these drawbacks. Using scanning tunneling microscopy and Landau-level spectroscopy in a device configuration which allows tuning the carrier concentration, we find that graphene on MoS2 is ultra-flat producing long mean free paths, while avoiding band structure reconstruction. Importantly, the screening of the MoS2 substrate can be tuned by changing the position of the Fermi energy with relatively low gate voltages. We show that shifting the Fermi energy from the gap to the edge of the conduction band gives rise to enhanced screening and to a substantial increase in the mean-free-path and quasiparticle lifetime. MoS2 substrates thus provide unique opportunities to access the intrinsic electronic properties of graphene and to study in situ the effects of screening on electron-electron interactions and transport.

preprint2013arXiv

Screening Charged Impurities and Lifting the Orbital Degeneracy in Graphene by Populating Landau Levels

We report the observation of an isolated charged impurity in graphene and present direct evidence of the close connection between the screening properties of a 2D electron system and the influence of the impurity on its electronic environment. Using scanning tunneling microscopy and Landau level spectroscopy we demonstrate that in the presence of a magnetic field the strength of the impurity can be tuned by controlling the occupation of Landau-level states with a gate-voltage. At low occupation the impurity is screened becoming essentially invisible. Screening diminishes as states are filled until, for fully occupied Landau-levels, the unscreened impurity significantly perturbs the spectrum in its vicinity. In this regime we report the first observation of Landau-level splitting into discrete states due to lifting the orbital degeneracy.

preprint2012arXiv

Electronic properties of graphene: a perspective from scanning tunneling microscopy and magneto-transport

This review covers recent experimental progress in probing the electronic properties of graphene and how they are influenced by various substrates, by the presence of a magnetic field and by the proximity to a superconductor. The focus is on results obtained using scanning tunneling microscopy, spectroscopy, transport and magneto-transport techniques.

preprint2012arXiv

Evolution of Landau Levels into Edge States at an Atomically Sharp Edge in Graphene

The quantum-Hall-effect (QHE) occurs in topologically-ordered states of two-dimensional (2d) electron-systems in which an insulating bulk-state coexists with protected 1d conducting edge-states. Owing to a unique topologically imposed edge-bulk correspondence these edge-states are endowed with universal properties such as fractionally-charged quasiparticles and interference-patterns, which make them indispensable components for QH-based quantum-computation and other applications. The precise edge-bulk correspondence, conjectured theoretically in the limit of sharp edges, is difficult to realize in conventional semiconductor-based electron systems where soft boundaries lead to edge-state reconstruction. Using scanning-tunneling microscopy and spectroscopy to follow the spatial evolution of bulk Landau-levels towards a zigzag edge of graphene supported above a graphite substrate we demonstrate that in this system it is possible to realize atomically sharp edges with no edge-state reconstruction. Our results single out graphene as a system where the edge-state structure can be controlled and the universal properties directly probed.

preprint2011arXiv

Flame Synthesis of Graphene Films in Open Environments

Few-layer graphene (FLG) is grown on copper and nickel substrates at high rates using a novel flame synthesis method in open-atmosphere environments. Transmittance and resistance properties of the transferred films are similar to those grown by other methods, but the concentration of oxygen, as assessed by XPS, is actually less than that for CVD-grown graphene under near vacuum conditions. The method involves utilizing a multi-element inverse-diffusion-flame burner, where post-flame species and temperatures are radially-uniform upon deposition at a substrate. Advantages of the flame synthesis method are scalability for large-area surface coverage, increased growth rates, high purity and yield, continuous processing, and reduced costs due to efficient use of fuel as both heat source and reagent. Additionally, by adjusting local growth conditions, other carbon nanostructures (i.e. nanotubes) are readily synthesized.

preprint2011arXiv

Quantized Landau level spectrum and its density dependence

Scanning tunneling microscopy and spectroscopy in magnetic field was used to study Landau quantization in graphene and its dependence on charge carrier density. Measurements were carried out on exfoliated graphene samples deposited on a chlorinated SiO2 thermal oxide which allowed observing the Landau level sequences characteristic of single layer graphene while tuning the density through the Si backgate. Upon changing the carrier density we find abrupt jumps in the Fermi level after each Landau level is filled. Moreover, the Landau level spacing shows a marked increase at low doping levels, consistent with an interaction-induced renormalization of the Dirac cone.

preprint2011arXiv

Self-navigation of STM tip toward a micron sized sample

We demonstrate a simple capacitive based method to quickly and efficiently locate micron size conductive samples on insulating substrates in a scanning tunneling microscope (STM). By using edge recognition the method is designed to locate and identify small features when the STM tip is far above the surface allowing for crash-free search and navigation. The method can be implemented in any STM environment even at low temperatures and in strong magnetic field, with minimal or no hardware modifications.

preprint2009arXiv

Fractional quantum Hall effect and insulating phase of Dirac electrons in graphene

In graphene, which is an atomic layer of crystalline carbon, two of the distinguishing properties of the material are the charge carriers two-dimensional and relativistic character. The first experimental evidence of the two-dimensional nature of graphene came from the observation of a sequence of plateaus in measurements of its transport properties in the presence of an applied magnetic field. These are signatures of the so-called integer quantum Hall effect. However, as a consequence of the relativistic character of the charge carriers, the integer quantum Hall effect observed in graphene is qualitatively different from its semiconductor analogue. As a third distinguishing feature of graphene, it has been conjectured that interactions and correlations should be important in this material, but surprisingly, evidence of collective behaviour in graphene is lacking. In particular, the quintessential collective quantum behaviour in two dimensions, the fractional quantum Hall effect (FQHE), has so far resisted observation in graphene despite intense efforts and theoretical predictions of its existence. Here we report the observation of the FQHE in graphene. Our observations are made possible by using suspended graphene devices probed by two-terminal charge transport measurements. This allows us to isolate the sample from substrate-induced perturbations that usually obscure the effects of interactions in this system and to avoid effects of finite geometry. At low carrier density, we find a field-induced transition to an insulator that competes with the FQHE, allowing its observation only in the highest quality samples. We believe that these results will open the door to the physics of FQHE and other collective behaviour in graphene.

preprint2007arXiv

Ageing memory and glassiness of a driven vortex system

Many systems in nature, glasses, interfaces and fractures being some examples, cannot equilibrate with their environment, which gives rise to novel and surprising behaviour such as memory effects, ageing and nonlinear dynamics. Unlike their equilibrated counterparts, the dynamics of out-of- equilibrium systems is generally too complex to be captured by simple macroscopic laws. Here we investigate a system that straddles the boundary between glass and crystal: a Bragg glass formed by vortices in a superconductor. We find that the response to an applied force evolves according to a stretched exponential, with the exponent reflecting the deviation from equilibrium. After the force is removed, the system ages with time and its subsequent response time scales linearly with its age (simple ageing), meaning that older systems are slower than younger ones. We show that simple ageing can occur naturally in the presence of sufficient quenched disorder. Moreover, the hierarchical distribution of timescales, arising when chunks of loose vortices cannot move before trapped ones become dislodged, leads to a stretched-exponential response.

preprint2007arXiv

Observation of Landau levels of Dirac fermions in graphite

The low energy electronic excitations in single layer and bilayer graphite (graphene) resemble quantum-relativistic particles also known as Dirac Fermions (DF). They possess an internal degree of freedom, chirality, that leads to unusual Landau Level (LL) energy sequences in a magnetic field and profoundly alters the magneto-transport properties. One of the consequences is an anomalous Quantum-Hall effect, recently detected in both single layer and bi-layer graphene. However the underlying cause, the unusual LL sequence, was never observed. Here we report the direct observation of LL of DF by means of low temperature Scanning-Tunnelling-Spectroscopy (STS) on the surface of graphite in fields up to 12 Tesla. We find evidence of coexistence of massless and massive DF, and identify the zero-energy LL which is a unique consequence of their quantum-relativistic nature. Surprisingly these strictly two-dimensional properties emerge even on bulk graphite in samples where the interlayer coupling is weak.