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Adina Luican

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cond-mat.mes-hall cond-mat.str-el

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preprint2012arXiv

Evolution of Landau Levels into Edge States at an Atomically Sharp Edge in Graphene

The quantum-Hall-effect (QHE) occurs in topologically-ordered states of two-dimensional (2d) electron-systems in which an insulating bulk-state coexists with protected 1d conducting edge-states. Owing to a unique topologically imposed edge-bulk correspondence these edge-states are endowed with universal properties such as fractionally-charged quasiparticles and interference-patterns, which make them indispensable components for QH-based quantum-computation and other applications. The precise edge-bulk correspondence, conjectured theoretically in the limit of sharp edges, is difficult to realize in conventional semiconductor-based electron systems where soft boundaries lead to edge-state reconstruction. Using scanning-tunneling microscopy and spectroscopy to follow the spatial evolution of bulk Landau-levels towards a zigzag edge of graphene supported above a graphite substrate we demonstrate that in this system it is possible to realize atomically sharp edges with no edge-state reconstruction. Our results single out graphene as a system where the edge-state structure can be controlled and the universal properties directly probed.

preprint2011arXiv

Quantized Landau level spectrum and its density dependence

Scanning tunneling microscopy and spectroscopy in magnetic field was used to study Landau quantization in graphene and its dependence on charge carrier density. Measurements were carried out on exfoliated graphene samples deposited on a chlorinated SiO2 thermal oxide which allowed observing the Landau level sequences characteristic of single layer graphene while tuning the density through the Si backgate. Upon changing the carrier density we find abrupt jumps in the Fermi level after each Landau level is filled. Moreover, the Landau level spacing shows a marked increase at low doping levels, consistent with an interaction-induced renormalization of the Dirac cone.

preprint2011arXiv

Self-navigation of STM tip toward a micron sized sample

We demonstrate a simple capacitive based method to quickly and efficiently locate micron size conductive samples on insulating substrates in a scanning tunneling microscope (STM). By using edge recognition the method is designed to locate and identify small features when the STM tip is far above the surface allowing for crash-free search and navigation. The method can be implemented in any STM environment even at low temperatures and in strong magnetic field, with minimal or no hardware modifications.

preprint2009arXiv

Fractional quantum Hall effect and insulating phase of Dirac electrons in graphene

In graphene, which is an atomic layer of crystalline carbon, two of the distinguishing properties of the material are the charge carriers two-dimensional and relativistic character. The first experimental evidence of the two-dimensional nature of graphene came from the observation of a sequence of plateaus in measurements of its transport properties in the presence of an applied magnetic field. These are signatures of the so-called integer quantum Hall effect. However, as a consequence of the relativistic character of the charge carriers, the integer quantum Hall effect observed in graphene is qualitatively different from its semiconductor analogue. As a third distinguishing feature of graphene, it has been conjectured that interactions and correlations should be important in this material, but surprisingly, evidence of collective behaviour in graphene is lacking. In particular, the quintessential collective quantum behaviour in two dimensions, the fractional quantum Hall effect (FQHE), has so far resisted observation in graphene despite intense efforts and theoretical predictions of its existence. Here we report the observation of the FQHE in graphene. Our observations are made possible by using suspended graphene devices probed by two-terminal charge transport measurements. This allows us to isolate the sample from substrate-induced perturbations that usually obscure the effects of interactions in this system and to avoid effects of finite geometry. At low carrier density, we find a field-induced transition to an insulator that competes with the FQHE, allowing its observation only in the highest quality samples. We believe that these results will open the door to the physics of FQHE and other collective behaviour in graphene.