Researcher profile

Eugene E. Haller

Eugene E. Haller contributes to research discovery and scholarly infrastructure.

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physics.optics cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el cond-mat.supr-con

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preprint2015arXiv

73Ge-NMR/NQR Investigation of Magnetic Properties of URhGe

We report 73Ge-NMR and NQR results for ferromagnetic (FM) superconductor URhGe. The magnitude and direction of the internal field, H_int, and parameters of the electric field gradient at the Ge site were determined experimentally. Using powdered polycrystalline samples oriented by different methods, the field dependences of NMR shift and nuclear spin relaxation rates for H_0 // c (easy axis) and H_0 // b were obtained. From the NMR shifts for H_0 // b, we confirmed a gradual suppression of the Curie temperature and observed a phase separation near the spin reorientation. The observation of the phase separation gives microscopic evidence that the spin reorientation under H_0 // b is of first order at low temperatures. The nuclear spin-lattice relaxation rate 1/T_1 indicates that the magnetic fluctuations are suppressed for H_0 // c, whereas the fluctuations remain strongly for H_0 // b. The enhancements of both 1/T_1T and the nuclear spin-spin relaxation rate 1/T_2 for H_0 // b toward the spin reorientation field suggest that the field-induced superconductivity in URhGe emerges under the magnetic fluctuations along the b axis and the c axis.

preprint2015arXiv

Compliant substrate epitaxy: Au on MoS$_2$

The epitaxial growth of {111} oriented Au on MoS$_2$ is well documented despite the large lattice mismatch (~8% biaxial strain), and the fact that a Au {001} orientation results in much less elastic strain. An analysis based on density functional and linear elasticity theories reveals that the {111} orientation is stabilized by a combination of favorable surface and interfacial contributions to the energy, and the compliance of the first layer of the MoS$_2$.

preprint2012arXiv

Electrically driven photonic crystal nanocavity devices

Interest in photonic crystal nanocavities is fueled by advances in device performance, particularly in the development of low-threshold laser sources. Effective electrical control of high performance photonic crystal lasers has thus far remained elusive due to the complexities associated with current injection into cavities. A fabrication procedure for electrically pumping photonic crystal membrane devices using a lateral p-i-n junction has been developed and is described in this work. We have demonstrated electrically pumped lasing in our junctions with a threshold of 181 nA at 50K - the lowest threshold ever demonstrated in an electrically pumped laser. At room temperature we find that our devices behave as single-mode light-emitting diodes (LEDs), which when directly modulated, have an ultrafast electrical response up to 10 GHz corresponding to less than 1 fJ/bit energy operation - the lowest for any optical transmitter. In addition, we have demonstrated electrical pumping of photonic crystal nanobeam LEDs, and have built fiber taper coupled electro-optic modulators. Fiber-coupled photodetectors based on two-photon absorption are also demonstrated as well as multiply integrated components that can be independently electrically controlled. The presented electrical injection platform is a major step forward in providing practical low power and integrable devices for on-chip photonics.

preprint2011arXiv

Nanobeam Photonic Crystal Cavity Light-Emitting Diodes

We present results on electrically driven nanobeam photonic crystal cavities formed out of a lateral p-i-n junction in gallium arsenide. Despite their small conducting dimensions, nanobeams have robust electrical properties with high current densities possible at low drive powers. Much like their two-dimensional counterparts, the nanobeam cavities exhibit bright electroluminescence at room temperature from embedded 1,250 nm InAs quantum dots. A small room temperature differential gain is observed in the cavities with minor beam self-heating suggesting that lasing is possible. These results open the door for efficient electrical control of active nanobeam cavities for diverse nanophotonic applications.

preprint2010arXiv

Excitonic Aharonov-Bohm Effect in Isotopically Pure 70Ge/Si Type-II Quantum Dots

We report on a magneto-photoluminescence study of isotopically pure 70Ge/Si self-assembled type-II quantum dots. Oscillatory behaviors attributed to the Aharonov-Bohm effect are simultaneously observed for the emission energy and intensity of excitons subject to an increasing magnetic field. When the magnetic flux penetrates through the ring-like trajectory of an electron moving around each quantum dot, the ground state of an exciton experiences a change in its angular momentum. Our results provide the experimental evidence for the phase coherence of a localized electron wave function in group-IV Ge/Si self-assembled quantum structures.