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Researcher profile

Jan Petykiewicz

Jan Petykiewicz contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.opticsphysics.app-ph

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Published work

9 published item(s)

preprint2020arXiv

On the fundamental limitations of imaging with evanescent waves

There has been significant interest in imaging and focusing schemes that use evanescent waves to beat the diffraction limit, such as those employing negative refractive index materials or hyperbolic metamaterials. The fundamental issue with all such schemes is that the evanescent waves quickly decay between the imaging system and sample, leading to extremely weak field strengths. Using an entropic definition of spot size which remains well defined for arbitrary beam profiles, we derive rigorous bounds on this evanescent decay. In particular, we show that the decay length is only $w / πe \approx 0.12 w$, where $w$ is the spot width in the focal plane, or $\sqrt{A} / 2 e \sqrtπ \approx 0.10 \sqrt{A}$, where $A$ is the spot area. Practical evanescent imaging schemes will thus most likely be limited to focal distances less than or equal to the spot width.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Direct Bandgap Light Emission from Strained Ge Nanowires Coupled with High-Q Optical Cavities

A silicon-compatible light source is the final missing piece for completing high-speed, low-power on-chip optical interconnects. In this paper, we present a germanium-based light emitter that encompasses all the aspects of potential low-threshold lasers: highly strained germanium gain medium, strain-induced pseudo-heterostructure, and high-Q optical cavity. Our light emitting structure presents greatly enhanced photoluminescence into cavity modes with measured quality factors of up to 2,000. The emission wavelength is tuned over more than 400 nm with a single lithography step. We find increased optical gain in optical cavities formed with germanium under high (>2.3%) tensile strain. Through quantitative analysis of gain/loss mechanisms, we find that free carrier absorption from the hole bands dominates the gain, resulting in no net gain even from highly strained, n-type doped germanium.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Ge Microdisk with Lithographically-Tunable Strain using CMOS-Compatible Process

We present germanium microdisk optical resonators under a large biaxial tensile strain using a CMOS-compatible fabrication process. Biaxial tensile strain of ~0.7% is achieved by means of a stress concentration technique that allows the strain level to be customized by carefully selecting certain lithographic dimensions. The partial strain relaxation at the edges of a patterned germanium microdisk is compensated by depositing compressively stressed silicon nitride layer. Two-dimensional Raman spectroscopy measurements along with finite-element method simulations confirm a relatively homogeneous strain distribution within the final microdisk structure. Photoluminescence results show clear optical resonances due to whispering gallery modes which are in good agreement with finite-difference time-domain optical simulations. Our bandgap-customizable microdisks present a new route towards an efficient germanium light source for on-chip optical interconnects.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Inverse design and implementation of a wavelength demultiplexing grating coupler

Nanophotonics has emerged as a powerful tool for manipulating light on chips. Almost all of today's devices, however, have been designed using slow and ineffective brute-force search methods, leading in many cases to limited device performance. In this article, we provide a complete demonstration of our recently proposed inverse design technique, wherein the user specifies design constraints in the form of target fields rather than a dielectric constant profile, and in particular we use this method to demonstrate a new demultiplexing grating. The novel grating, which has not been developed using conventional techniques, accepts a vertical-incident Gaussian beam from a free-space and separates O-band $(1300\mathrm{nm})$ and C-band $(1550\mathrm{nm})$ light into separate waveguides. This inverse design concept is simple and extendable to a broad class of highly compact devices including frequency splitters, mode converters, and spatial mode multiplexers.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Nonlinear frequency conversion using high quality modes in GaAs nanobeam cavities

We demonstrate the design, fabrication and characterization of nanobeam photonic crystal cavities in (111)-GaAs with multiple high quality factor modes, with large frequency separations (up to 740 nm in experiment, i.e., a factor of 1.5 and up to an octave in theory). Such structures are crucial for efficient implementation of nonlinear frequency conversion. Here, we employ them to demonstrate sum frequency generation from 1300 nm and 1950 nm to 780 nm. These wavelengths are particularly interesting for quantum frequency conversion between Si vacancy centers in diamond and the fiber optic network.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Second harmonic generation in GaAs photonic crystal cavities in (111)B and (001) crystal orientations

We demonstrate second harmonic generation in photonic crystal cavities in (001) and (111)B oriented GaAs. The fundamental resonance is at 1800 nm, leading to second harmonic below the GaAs bandgap. Below-bandgap operation minimizes absorption of the second harmonic and two photon absorption of the pump. Photonic crystal cavities were fabricated in both orientations at various in-plane rotations of the GaAs substrate. The rotation dependence and farfield patterns of the second harmonic match simulation. We observe similar maximum efficiencies of 1.2 %/W in (001) and (111)B oriented GaAs.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electrically driven photonic crystal nanocavity devices

Interest in photonic crystal nanocavities is fueled by advances in device performance, particularly in the development of low-threshold laser sources. Effective electrical control of high performance photonic crystal lasers has thus far remained elusive due to the complexities associated with current injection into cavities. A fabrication procedure for electrically pumping photonic crystal membrane devices using a lateral p-i-n junction has been developed and is described in this work. We have demonstrated electrically pumped lasing in our junctions with a threshold of 181 nA at 50K - the lowest threshold ever demonstrated in an electrically pumped laser. At room temperature we find that our devices behave as single-mode light-emitting diodes (LEDs), which when directly modulated, have an ultrafast electrical response up to 10 GHz corresponding to less than 1 fJ/bit energy operation - the lowest for any optical transmitter. In addition, we have demonstrated electrical pumping of photonic crystal nanobeam LEDs, and have built fiber taper coupled electro-optic modulators. Fiber-coupled photodetectors based on two-photon absorption are also demonstrated as well as multiply integrated components that can be independently electrically controlled. The presented electrical injection platform is a major step forward in providing practical low power and integrable devices for on-chip photonics.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Nanobeam Photonic Crystal Cavity Light-Emitting Diodes

We present results on electrically driven nanobeam photonic crystal cavities formed out of a lateral p-i-n junction in gallium arsenide. Despite their small conducting dimensions, nanobeams have robust electrical properties with high current densities possible at low drive powers. Much like their two-dimensional counterparts, the nanobeam cavities exhibit bright electroluminescence at room temperature from embedded 1,250 nm InAs quantum dots. A small room temperature differential gain is observed in the cavities with minor beam self-heating suggesting that lasing is possible. These results open the door for efficient electrical control of active nanobeam cavities for diverse nanophotonic applications.

0 citations0 reviewsNo code linkedOpen access