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Researcher profile

Erik P. A. M. Bakkers

Erik P. A. M. Bakkers contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-concond-mat.str-elphysics.opticsquant-ph

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Published work

10 published item(s)

preprint2022arXiv

Nonlocal measurement of quasiparticle charge and energy relaxation in proximitized semiconductor nanowires using quantum dots

The lowest-energy excitations of superconductors do not carry an electric charge, as their wave function is equally electron-like and hole-like. This fundamental property is not easy to study in electrical measurements that rely on the charge to generate an observable signal. The ability of a quantum dot to act as a charge filter enables us to solve this problem and measure the quasiparticle charge in superconducting-semiconducting hybrid nanowire heterostructures. We report measurements on a three-terminal circuit, in which an injection lead excites a non-equilibrium quasiparticle distribution in the hybrid system, and the electron or hole component of the resulting quasiparticles is detected using a quantum dot as a tunable charge and energy filter. The results verify the chargeless nature of the quasiparticles at the gap edge and reveal the complete relaxation of injected charge and energy in a proximitized nanowire, resolving open questions in previous three-terminal experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Parametric exploration of zero-energy modes in three-terminal InSb-Al nanowire devices

We systematically study three-terminal InSb-Al nanowire devices by using radio-frequency reflectometry. Tunneling spectroscopy measurements on both ends of the hybrid nanowires are performed while systematically varying the chemical potential, magnetic field and junction transparencies. Identifying the lowest-energy state allows for the construction of lowest- and zero-energy state diagrams, which show how the states evolve as a function of the aforementioned parameters. Importantly, comparing the diagrams taken for each end of the hybrids enables the identification of states which do not coexist simultaneously, ruling out a significant amount of the parameter space as candidates for a topological phase. Furthermore, altering junction transparencies filters out zero-energy states sensitive to a local gate potential. Such a measurement strategy significantly reduces the time necessary to identify a potential topological phase and minimizes the risk of falsely recognizing trivial bound states as Majorana zero modes.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Large zero-bias peaks in InSb-Al hybrid semiconductor-superconductor nanowire devices

We report electron transport studies on InSb-Al hybrid semiconductor-superconductor nanowire devices. Tunnelling spectroscopy is used to measure the evolution of subgap states while varying magnetic field and voltages applied to various nearby gates. At magnetic fields between 0.7 and 0.9 T, the differential conductance contains large zero bias peaks (ZBPs) whose height reaches values on the order 2e2/h. We investigate these ZBPs for large ranges of gate voltages in different devices. We discuss possible interpretations in terms of disorder-induced subgap states, Andreev bound states and Majorana zero modes.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

The 2021 Quantum Materials Roadmap

In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to shaping a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Exfoliated hexagonal BN as gate dielectric for InSb nanowire quantum dots with improved gate hysteresis and charge noise

We characterize InSb quantum dots induced by bottom finger gates within a nanowire that is grown via the vapor-liquid-solid process. The gates are separated from the nanowire by an exfoliated 35\,nm thin hexagonal BN flake. We probe the Coulomb diamonds of the gate induced quantum dot exhibiting charging energies of $\sim 2.5\,\mathrm{meV}$ and orbital excitation energies up to $0.3\,\mathrm{meV}$. The gate hysteresis for sweeps covering 5 Coulomb diamonds reveals an energy hysteresis of only $60\mathrm{μeV}$ between upwards and downwards sweeps. Charge noise is studied via long-term measurements at the slope of a Coulomb peak revealing potential fluctuations of $\sim 1\,μ\mathrm{eV}/\mathrm{\sqrt{Hz}}$ at 1\,Hz. This makes h-BN the dielectric with the currently lowest gate hysteresis and lowest low-frequency potential fluctuations reported for low-gap III-V nanowires. The extracted values are similar to state-of-the art quantum dots within Si/SiGe and Si/SiO${_2}$ systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires

The growth of Sn-rich group-IV semiconductors at the nanoscale provides new paths for understanding the fundamental properties of metastable GeSn alloys. Here, we demonstrate the effect of the growth conditions on the morphology and composition of Ge/GeSn core/shell nanowires by correlating the experimental observations with a theoretical interpretation based on a multi-scale approach. We show that the cross-sectional morphology of Ge/GeSn core/shell nanowires changes from hexagonal to dodecagonal upon increasing the supply of the Sn precursor. This transformation strongly influences the Sn distribution as a higher Sn content is measured under the {112} growth front. Ab-initio DFT calculations provide an atomic-scale explanation by showing that Sn incorporation is favored at the {112} surfaces, where the Ge bonds are tensile-strained. A phase-field continuum model was developed to reproduce the morphological transformation and the Sn distribution within the wire, shedding light on the complex growth mechanism and unveiling the relation between segregation and faceting. The tunability of the photoluminescence emission with the change in composition and morphology of the GeSn shell highlights the potential of the core/shell nanowire system for opto-electronic devices operating at mid-infrared wavelengths.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Transmission phase read-out of a large quantum dot in a nanowire interferometer

Detecting the transmission phase of a quantum dot via interferometry can reveal the symmetry of the orbitals and details of electron transport. Crucially, interferometry will enable the read-out of topological qubits based on one-dimensional nanowires. However, measuring the transmission phase of a quantum dot in a nanowire has not yet been established. Here, we exploit recent breakthroughs in the growth of one-dimensional networks and demonstrate interferometric read-out in a nanowire-based architecture. In our two-path interferometer, we define a quantum dot in one branch and use the other path as a reference arm. We observe Fano resonances stemming from the interference between electrons that travel through the reference arm and undergo resonant tunnelling in the quantum dot. Between consecutive Fano peaks, the transmission phase exhibits phase lapses that are affected by the presence of multiple trajectories in the interferometer. These results provide critical insights for the design of future topological qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Spin transport in ferromagnet-InSb nanowire quantum devices

Signatures of Majorana zero modes (MZMs), which are the building blocks for fault-tolerant topological quantum computing, have been observed in semiconductor nanowires (NW) with strong spin-orbital-interaction (SOI), such as InSb and InAs NWs with proximity-induced superconductivity. Realizing topological superconductivity and MZMs in this most widely-studied platform also requires eliminating spin degeneracy, which is realized by applying a magnetic field to induce a helical gap. However, the applied field can adversely impact the induced superconducting state in the NWs and also places geometric restrictions on the device, which can affect scaling of future MZM-based quantum registers. These challenges could be circumvented by integrating magnetic elements with the NWs. With this motivation, in this work we report the first experimental investigation of spin transport across InSb NWs, which are enabled by devices with ferromagnetic (FM) contacts. We observe signatures of spin polarization and spin-dependent transport in the quasi-one-dimensional ballistic regime. Moreover, we show that electrostatic gating tunes the observed magnetic signal and also reveals a transport regime where the device acts as a spin filter. These results open an avenue towards developing MZM devices in which spin degeneracy is lifted locally, without the need of an applied magnetic field. They also provide a path for realizing spin-based devices that leverage spin-orbital states in quantum wires.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Ultrafast dephasing of light in strongly scattering GaP nanowires

We demonstrate ultrafast dephasing in the random transport of light through a layer consisting of strongly scattering GaP nanowires. Dephasing results in a nonlinear intensity modulation of individual pseudomodes which is 100 times larger than that of bulk GaP. Different contributions to the nonlinear response are separated using total transmission, white-light frequency correlation, and statistical pseudomode analysis. A dephasing time of $1.2\pm 0.2$~ps is found. Quantitative agreement is obtained with numerical model calculations which include photoinduced absorption and deformation of individual scatterers. Nonlinear dephasing of photonic eigenmodes opens up avenues for ultrafast control of random lasers, nanophotonic switches, and photon localization.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Giant optical birefringence of semiconductor nanowire metamaterials

Semiconductor nanowires exhibit large polarization anisotropy for the absorption and emission of light, making them ideal building blocks for novel photonic metamaterials. Here, we demonstrate that a high density of aligned nanowires exhibits giant optical birefringence, a collective phenomenon observable uniquely for collections of wires. The nanowire material was grown on gallium phosphide (GaP) (111) in the form of vertically standing GaP nanowires. We obtain the largest optical birefringence to date, with a difference between the in-plane and out-of-plane refractive indices of 0.80 and a relative birefringence of 43%. These values exceed by a factor of 75 the natural birefringence of quartz and a by more than a factor of two the highest values reported so far in other artificial materials. By exploiting the specific crystallographic growth directions of the nanowires on the substrate, we further demonstrate full control over the orientation of the optical birefringence effect in the metamaterial.

0 citations0 reviewsNo code linkedOpen access