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Erik P. A. M. Bakkers

Erik P. A. M. Bakkers appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.opticscond-mat.supr-conquant-phcond-mat.dis-nncond-mat.str-el

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Published work

21 published item(s)

preprint2022arXiv

Nonlocal measurement of quasiparticle charge and energy relaxation in proximitized semiconductor nanowires using quantum dots

The lowest-energy excitations of superconductors do not carry an electric charge, as their wave function is equally electron-like and hole-like. This fundamental property is not easy to study in electrical measurements that rely on the charge to generate an observable signal. The ability of a quantum dot to act as a charge filter enables us to solve this problem and measure the quasiparticle charge in superconducting-semiconducting hybrid nanowire heterostructures. We report measurements on a three-terminal circuit, in which an injection lead excites a non-equilibrium quasiparticle distribution in the hybrid system, and the electron or hole component of the resulting quasiparticles is detected using a quantum dot as a tunable charge and energy filter. The results verify the chargeless nature of the quasiparticles at the gap edge and reveal the complete relaxation of injected charge and energy in a proximitized nanowire, resolving open questions in previous three-terminal experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Parametric exploration of zero-energy modes in three-terminal InSb-Al nanowire devices

We systematically study three-terminal InSb-Al nanowire devices by using radio-frequency reflectometry. Tunneling spectroscopy measurements on both ends of the hybrid nanowires are performed while systematically varying the chemical potential, magnetic field and junction transparencies. Identifying the lowest-energy state allows for the construction of lowest- and zero-energy state diagrams, which show how the states evolve as a function of the aforementioned parameters. Importantly, comparing the diagrams taken for each end of the hybrids enables the identification of states which do not coexist simultaneously, ruling out a significant amount of the parameter space as candidates for a topological phase. Furthermore, altering junction transparencies filters out zero-energy states sensitive to a local gate potential. Such a measurement strategy significantly reduces the time necessary to identify a potential topological phase and minimizes the risk of falsely recognizing trivial bound states as Majorana zero modes.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Large zero-bias peaks in InSb-Al hybrid semiconductor-superconductor nanowire devices

We report electron transport studies on InSb-Al hybrid semiconductor-superconductor nanowire devices. Tunnelling spectroscopy is used to measure the evolution of subgap states while varying magnetic field and voltages applied to various nearby gates. At magnetic fields between 0.7 and 0.9 T, the differential conductance contains large zero bias peaks (ZBPs) whose height reaches values on the order 2e2/h. We investigate these ZBPs for large ranges of gate voltages in different devices. We discuss possible interpretations in terms of disorder-induced subgap states, Andreev bound states and Majorana zero modes.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

The 2021 Quantum Materials Roadmap

In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to shaping a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Exfoliated hexagonal BN as gate dielectric for InSb nanowire quantum dots with improved gate hysteresis and charge noise

We characterize InSb quantum dots induced by bottom finger gates within a nanowire that is grown via the vapor-liquid-solid process. The gates are separated from the nanowire by an exfoliated 35\,nm thin hexagonal BN flake. We probe the Coulomb diamonds of the gate induced quantum dot exhibiting charging energies of $\sim 2.5\,\mathrm{meV}$ and orbital excitation energies up to $0.3\,\mathrm{meV}$. The gate hysteresis for sweeps covering 5 Coulomb diamonds reveals an energy hysteresis of only $60\mathrm{μeV}$ between upwards and downwards sweeps. Charge noise is studied via long-term measurements at the slope of a Coulomb peak revealing potential fluctuations of $\sim 1\,μ\mathrm{eV}/\mathrm{\sqrt{Hz}}$ at 1\,Hz. This makes h-BN the dielectric with the currently lowest gate hysteresis and lowest low-frequency potential fluctuations reported for low-gap III-V nanowires. The extracted values are similar to state-of-the art quantum dots within Si/SiGe and Si/SiO${_2}$ systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires

The growth of Sn-rich group-IV semiconductors at the nanoscale provides new paths for understanding the fundamental properties of metastable GeSn alloys. Here, we demonstrate the effect of the growth conditions on the morphology and composition of Ge/GeSn core/shell nanowires by correlating the experimental observations with a theoretical interpretation based on a multi-scale approach. We show that the cross-sectional morphology of Ge/GeSn core/shell nanowires changes from hexagonal to dodecagonal upon increasing the supply of the Sn precursor. This transformation strongly influences the Sn distribution as a higher Sn content is measured under the {112} growth front. Ab-initio DFT calculations provide an atomic-scale explanation by showing that Sn incorporation is favored at the {112} surfaces, where the Ge bonds are tensile-strained. A phase-field continuum model was developed to reproduce the morphological transformation and the Sn distribution within the wire, shedding light on the complex growth mechanism and unveiling the relation between segregation and faceting. The tunability of the photoluminescence emission with the change in composition and morphology of the GeSn shell highlights the potential of the core/shell nanowire system for opto-electronic devices operating at mid-infrared wavelengths.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Transmission phase read-out of a large quantum dot in a nanowire interferometer

Detecting the transmission phase of a quantum dot via interferometry can reveal the symmetry of the orbitals and details of electron transport. Crucially, interferometry will enable the read-out of topological qubits based on one-dimensional nanowires. However, measuring the transmission phase of a quantum dot in a nanowire has not yet been established. Here, we exploit recent breakthroughs in the growth of one-dimensional networks and demonstrate interferometric read-out in a nanowire-based architecture. In our two-path interferometer, we define a quantum dot in one branch and use the other path as a reference arm. We observe Fano resonances stemming from the interference between electrons that travel through the reference arm and undergo resonant tunnelling in the quantum dot. Between consecutive Fano peaks, the transmission phase exhibits phase lapses that are affected by the presence of multiple trajectories in the interferometer. These results provide critical insights for the design of future topological qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Spin transport in ferromagnet-InSb nanowire quantum devices

Signatures of Majorana zero modes (MZMs), which are the building blocks for fault-tolerant topological quantum computing, have been observed in semiconductor nanowires (NW) with strong spin-orbital-interaction (SOI), such as InSb and InAs NWs with proximity-induced superconductivity. Realizing topological superconductivity and MZMs in this most widely-studied platform also requires eliminating spin degeneracy, which is realized by applying a magnetic field to induce a helical gap. However, the applied field can adversely impact the induced superconducting state in the NWs and also places geometric restrictions on the device, which can affect scaling of future MZM-based quantum registers. These challenges could be circumvented by integrating magnetic elements with the NWs. With this motivation, in this work we report the first experimental investigation of spin transport across InSb NWs, which are enabled by devices with ferromagnetic (FM) contacts. We observe signatures of spin polarization and spin-dependent transport in the quasi-one-dimensional ballistic regime. Moreover, we show that electrostatic gating tunes the observed magnetic signal and also reveals a transport regime where the device acts as a spin filter. These results open an avenue towards developing MZM devices in which spin degeneracy is lifted locally, without the need of an applied magnetic field. They also provide a path for realizing spin-based devices that leverage spin-orbital states in quantum wires.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Anisotropic Pauli spin blockade in hole quantum dots

We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we tune to a regime with visible shell filling in both dots. We observe a Pauli spin blockade and can assign the measured leakage current at low magnetic fields to spin-flip cotunneling, for which we measure a strong anisotropy related to an anisotropic g-factor. At higher magnetic fields we see signatures for leakage current caused by spin-orbit coupling between (1,1)-singlet and (2,0)-triplet states. Taking into account these anisotropic spin-flip mechanisms, we can choose the magnetic field direction with the longest spin lifetime for improved spin-orbit qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Conductance Quantization at zero magnetic field in InSb nanowires

Ballistic electron transport is a key requirement for existence of a topological phase transition in proximitized InSb nanowires. However, measurements of quantized conductance as direct evidence of ballistic transport have so far been obscured due to the increased chance of backscattering in one dimensional nanowires. We show that by improving the nanowire-metal interface as well as the dielectric environment we can consistently achieve conductance quantization at zero magnetic field. Additionally, studying the sub-band evolution in a rotating magnetic field reveals an orbital degeneracy between the second and third sub-bands for perpendicular fields above 1T.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Electric-field dependent g-factor anisotropy in Ge-Si core-shell nanowire quantum dots

We present angle-dependent measurements of the effective g-factor g* in a Ge-Si core-shell nanowire quantum dot. g* is found to be maximum when the magnetic field is pointing perpendicular to both the nanowire and the electric field induced by local gates. Alignment of the magnetic field with the electric field reduces g* significantly. g* is almost completely quenched when the magnetic field is aligned with the nanowire axis. These findings confirm recent calculations, where the obtained anisotropy is attributed to a Rashba-type spin-orbit interaction induced by heavy-hole light-hole mixing. In principle, this facilitates manipulation of spin-orbit qubits by means of a continuous high-frequency electric field.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Highly tuneable hole quantum dots in Ge-Si core-shell nanowires

We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long dot into a double quantum dot with a separate control over the tunnel couplings and the electrochemical potential of each dot. Both single and double quantum dot configurations prove to be very stable and show excellent control over the electrostatic environment of the dots, making this system a highly versatile platform for spin-based quantum computing.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Optical transmission matrix as a probe of the photonic interaction strength

We demonstrate that optical transmission matrices (TM) of disordered complex media provide a powerful tool to extract the photonic interaction strength, independent of surface effects. We measure TM of strongly scattering GaP nanowires and plot the singular value density of the measured matrices and a random matrix model. By varying the free parameters of the model, the transport mean free path and effective refractive index, we retrieve the photonic interaction strength. From numerical simulations we conclude that TM statistics is hardly sensitive to surface effects, in contrast to enhanced backscattering or total transmission based methods.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Towards high mobility InSb nanowire devices

We study the low-temperature electron mobility of InSb nanowires. We extract the mobility at 4.2 Kelvin by means of field effect transport measurements using a model consisting of a nanowire-transistor with contact resistances. This model enables an accurate extraction of device parameters, thereby allowing for a systematic study of the nanowire mobility. We identify factors affecting the mobility, and after optimization obtain a field effect mobility of $\sim2.5\mathbin{\times}10^4$ cm$^2$/Vs. We further demonstrate the reproducibility of these mobility values which are among the highest reported for nanowires. Our investigations indicate that the mobility is currently limited by adsorption of molecules to the nanowire surface and/or the substrate.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Mapping the directional emission of quasi-two-dimensional photonic crystals of semiconductor nanowires using Fourier microscopy

Controlling the dispersion and directionality of the emission of nanosources is one of the major goals of nanophotonics research. This control will allow the development of highly efficient nanosources even at the single photon level. One of the ways to achieve this goal is to couple the emission to Bloch modes of periodic structures. Here, we present the first measurements of the directional emission from nanowire photonic crystals by using Fourier microscopy. With this technique we efficiently collect and resolve the directional emission of nanowires within the numerical aperture of a microscope objective. The light emission from a heterostructure grown in each nanowire is governed by the photonic (Bloch) modes of the photonic crystal. We also demonstrate that the directionality of the emission can be easily controlled by infiltrating the photonic crystal with a high refractive index liquid. This work opens new possibilities for the control of the emission of sources in nanowires.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Avalanche amplification of a single exciton in a semiconductor nanowire

Interfacing single photons and electrons is a crucial ingredient for sharing quantum information between remote solid-state qubits. Semiconductor nanowires offer the unique possibility to combine optical quantum dots with avalanche photodiodes, thus enabling the conversion of an incoming single photon into a macroscopic current for efficient electrical detection. Currently, millions of excitation events are required to perform electrical read-out of an exciton qubit state. Here we demonstrate multiplication of carriers from only a single exciton generated in a quantum dot after tunneling into a nanowire avalanche photodiode. Due to the large amplification of both electrons and holes (> 10^4), we reduce by four orders of magnitude the number of excitation events required to electrically detect a single exciton generated in a quantum dot. This work represents a significant step towards single-shot electrical read-out and offers a new functionality for on-chip quantum information circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Bright single-photon sources in bottom-up tailored nanowires

The ability to achieve near-unity light extraction efficiency is necessary for a truly deterministic single photon source. The most promising method to reach such high efficiencies is based on embedding single photon emitters in tapered photonic waveguides defined by top-down etching techniques. However, light extraction efficiencies in current top-down approaches are limited by fabrication imperfections and etching induced defects. The efficiency is further tempered by randomly positioned off-axis quantum emitters. Here, we present perfectly positioned single quantum dots on the axis of a tailored nanowire waveguide using bottom-up growth. In comparison to quantum dots in nanowires without waveguide, we demonstrate a 24-fold enhancement in the single photon flux, corresponding to a light extraction efficiency of 42 %. Such high efficiencies in one-dimensional nanowires are promising to transfer quantum information over large distances between remote stationary qubits using flying qubits within the same nanowire p-n junction.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Ultrafast dephasing of light in strongly scattering GaP nanowires

We demonstrate ultrafast dephasing in the random transport of light through a layer consisting of strongly scattering GaP nanowires. Dephasing results in a nonlinear intensity modulation of individual pseudomodes which is 100 times larger than that of bulk GaP. Different contributions to the nonlinear response are separated using total transmission, white-light frequency correlation, and statistical pseudomode analysis. A dephasing time of $1.2\pm 0.2$~ps is found. Quantitative agreement is obtained with numerical model calculations which include photoinduced absorption and deformation of individual scatterers. Nonlinear dephasing of photonic eigenmodes opens up avenues for ultrafast control of random lasers, nanophotonic switches, and photon localization.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Generic nano-imprint process for fabrication of nanowire arrays

A generic process has been developed to grow nearly defect free arrays of (heterostructured) InP and GaP nanowires. Soft nanoimprint lithography has been used to pattern gold particle arrays on full 2 inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 C for InP and 700 C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemical cleaning procedure is applicable to other lithographic techniques such as e-beam lithography, and therefore represents a generic process.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Single quantum dot nanowire LEDs

We report reproducible fabrication of InP-InAsP nanowire light emitting diodes in which electron-hole recombination is restricted to a quantum-dot-sized InAsP section. The nanowire geometry naturally self-aligns the quantum dot with the n-InP and p-InP ends of the wire, making these devices promising candidates for electrically-driven quantum optics experiments. We have investigated the operation of these nano-LEDs with a consistent series of experiments at room temperature and at 10 K, demonstrating the potential of this system for single photon applications.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Giant optical birefringence of semiconductor nanowire metamaterials

Semiconductor nanowires exhibit large polarization anisotropy for the absorption and emission of light, making them ideal building blocks for novel photonic metamaterials. Here, we demonstrate that a high density of aligned nanowires exhibits giant optical birefringence, a collective phenomenon observable uniquely for collections of wires. The nanowire material was grown on gallium phosphide (GaP) (111) in the form of vertically standing GaP nanowires. We obtain the largest optical birefringence to date, with a difference between the in-plane and out-of-plane refractive indices of 0.80 and a relative birefringence of 43%. These values exceed by a factor of 75 the natural birefringence of quartz and a by more than a factor of two the highest values reported so far in other artificial materials. By exploiting the specific crystallographic growth directions of the nanowires on the substrate, we further demonstrate full control over the orientation of the optical birefringence effect in the metamaterial.

0 citations0 reviewsNo code linkedOpen access