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Marcel A. Verheijen

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cond-mat.mtrl-sci cond-mat.mes-hall physics.optics

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preprint2022arXiv

Growth-related formation mechanism of I$_3$-type basal stacking fault in epitaxially grown hexagonal Ge-2H

The hexagonal-2H crystal phase of Ge recently emerged as a promising direct bandgap semiconductor in the mid-infrared range providing new prospects of additional optoelectronic functionalities of group-IV semiconductors (Ge and SiGe). The controlled synthesis of such hexagonal (2H) Ge phase is a challenge that can be overcome by using wurtzite GaAs nanowires as a template. However, depending on growth conditions, unusual basal stacking faults (BSFs) of I$_3$-type are formed in the metastable 2H structure. The growth of such core/shell heterostructures is observed in situ and in real-time by means of environmental transmission electron microscopy using chemical vapour deposition. The observations provide direct evidence of a step-flow growth of Ge-2H epilayers and reveal the growth-related formation of I$_3$-BSF during unstable growth. Their formation conditions are dynamically investigated. Through these in situ observations, we can propose a scenario for the nucleation of I$_3$-type BSFs that is likely valid for any metastable hexagonal 2H or wurtzite structures grown on m-plane substrates. Conditions are identified to avoid their formation for perfect crystalline synthesis of SiGe-2H.

preprint2021arXiv

Large zero-bias peaks in InSb-Al hybrid semiconductor-superconductor nanowire devices

We report electron transport studies on InSb-Al hybrid semiconductor-superconductor nanowire devices. Tunnelling spectroscopy is used to measure the evolution of subgap states while varying magnetic field and voltages applied to various nearby gates. At magnetic fields between 0.7 and 0.9 T, the differential conductance contains large zero bias peaks (ZBPs) whose height reaches values on the order 2e2/h. We investigate these ZBPs for large ranges of gate voltages in different devices. We discuss possible interpretations in terms of disorder-induced subgap states, Andreev bound states and Majorana zero modes.

preprint2020arXiv

Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires

The growth of Sn-rich group-IV semiconductors at the nanoscale provides new paths for understanding the fundamental properties of metastable GeSn alloys. Here, we demonstrate the effect of the growth conditions on the morphology and composition of Ge/GeSn core/shell nanowires by correlating the experimental observations with a theoretical interpretation based on a multi-scale approach. We show that the cross-sectional morphology of Ge/GeSn core/shell nanowires changes from hexagonal to dodecagonal upon increasing the supply of the Sn precursor. This transformation strongly influences the Sn distribution as a higher Sn content is measured under the {112} growth front. Ab-initio DFT calculations provide an atomic-scale explanation by showing that Sn incorporation is favored at the {112} surfaces, where the Ge bonds are tensile-strained. A phase-field continuum model was developed to reproduce the morphological transformation and the Sn distribution within the wire, shedding light on the complex growth mechanism and unveiling the relation between segregation and faceting. The tunability of the photoluminescence emission with the change in composition and morphology of the GeSn shell highlights the potential of the core/shell nanowire system for opto-electronic devices operating at mid-infrared wavelengths.

preprint2019arXiv

Extraction of Dzyaloshinksii-Moriya interaction from propagating spin waves validated

The interfacial Dzyaloshinksii-Moriya interaction (iDMI) is of great interest in thin-film magnetism because of its ability to stabilize chiral spin textures. It can be quantified by investigating the frequency non-reciprocity of oppositely propagating spin waves. However, as the iDMI is an interface interaction the relative effect reduces when the films become thicker making quantification more difficult. Here, we utilize all-electrical Propagating Spin Wave Spectroscopy (PSWS) to disentangle multiple contributions to spin wave frequency non-reciprocity to determine the iDMI. This is done by investigating non-reciprocities across a wide range of magnetic layer thicknesses (from 4 to 26 nm) in Pt/Co/Ir, Pt/Co/Pt, and Ir/Co/Pt stacks. We find the expected sign change in the iDMI when inverting the stack order, and a negligible iDMI for the symmetric Pt/Co/Pt. We additionally extract a difference in surface anisotropies and find a large contribution due to the formation of different crystalline phases of the Co, which is corroborated using nuclear magnetic resonance and high-resolution transmission-electron-microscopy measurements. These insights will open up new avenues to investigate, quantify and disentangle the fundamental mechanisms governing the iDMI, and pave a way towards engineered large spin-wave non-reciprocities for magnonic applications.

preprint2012arXiv

Bright single-photon sources in bottom-up tailored nanowires

The ability to achieve near-unity light extraction efficiency is necessary for a truly deterministic single photon source. The most promising method to reach such high efficiencies is based on embedding single photon emitters in tapered photonic waveguides defined by top-down etching techniques. However, light extraction efficiencies in current top-down approaches are limited by fabrication imperfections and etching induced defects. The efficiency is further tempered by randomly positioned off-axis quantum emitters. Here, we present perfectly positioned single quantum dots on the axis of a tailored nanowire waveguide using bottom-up growth. In comparison to quantum dots in nanowires without waveguide, we demonstrate a 24-fold enhancement in the single photon flux, corresponding to a light extraction efficiency of 42 %. Such high efficiencies in one-dimensional nanowires are promising to transfer quantum information over large distances between remote stationary qubits using flying qubits within the same nanowire p-n junction.

preprint2009arXiv

Generic nano-imprint process for fabrication of nanowire arrays

A generic process has been developed to grow nearly defect free arrays of (heterostructured) InP and GaP nanowires. Soft nanoimprint lithography has been used to pattern gold particle arrays on full 2 inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 C for InP and 700 C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemical cleaning procedure is applicable to other lithographic techniques such as e-beam lithography, and therefore represents a generic process.

preprint2007arXiv

Single quantum dot nanowire LEDs

We report reproducible fabrication of InP-InAsP nanowire light emitting diodes in which electron-hole recombination is restricted to a quantum-dot-sized InAsP section. The nanowire geometry naturally self-aligns the quantum dot with the n-InP and p-InP ends of the wire, making these devices promising candidates for electrically-driven quantum optics experiments. We have investigated the operation of these nano-LEDs with a consistent series of experiments at room temperature and at 10 K, demonstrating the potential of this system for single photon applications.